QCCJ Flash Memory 2,332

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

AM29F002NBT-90JE

Infineon Technologies

FLASH

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

125 Cel

3-STATE

256KX8

256K

-55 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002NBT-70JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

70 ns

5

YES

AM29F002BB-70JF

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

70 ns

5

YES

AM29F002NBT-55JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002BT-55JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002BB-90JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002NBT-55JF

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002BB-90JK

Infineon Technologies

FLASH

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

125 Cel

3-STATE

256KX8

256K

-55 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002BB-70JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

70 ns

5

YES

AM29F002BT-70JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

70 ns

5

YES

AM29F002NBB-55JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002NBT-90JK

Infineon Technologies

FLASH

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

Flash Memories

10

1.27 mm

125 Cel

3-STATE

256KX8

256K

-55 Cel

1,2,1,3

YES

MATTE TIN

YES

QUAD

R-PQCC-J32

3

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

Not Qualified

TOP

2097152 bit

4.5 V

e3

40

260

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002BB-55JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002NBT-90JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002NBB-55JF

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002BB-90JE

Infineon Technologies

FLASH

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

125 Cel

3-STATE

256KX8

256K

-55 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002NBB-70JF

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

70 ns

5

YES

AM29F002BB-55JF

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

BOTTOM

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

55 ns

5

YES

AM29F002BT-90JI

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

AM29F002BT-70JF

Infineon Technologies

FLASH

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

85 Cel

3-STATE

256KX8

256K

-40 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.25 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.75 V

NOR TYPE

.000005 Amp

13.97 mm

70 ns

5

YES

AM29F002BT-90JE

Infineon Technologies

FLASH

MILITARY

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

40 mA

262144 words

5

YES

8

CHIP CARRIER

LDCC32,.5X.6

10

1.27 mm

125 Cel

3-STATE

256KX8

256K

-55 Cel

1,2,1,3

YES

YES

QUAD

R-PQCC-J32

5.5 V

3.556 mm

1000000 Write/Erase Cycles

11.43 mm

TOP

2097152 bit

4.5 V

NOR TYPE

.000005 Amp

13.97 mm

90 ns

5

YES

TC58F010T-10

Toshiba

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

5.25 V

Not Qualified

1048576 bit

4.75 V

BULK ERASE; 10K ERASE/WRITE CYCLES MIN.

e0

NOR TYPE

100 ns

12

TC58F010T-12

Toshiba

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

QUAD

R-PQCC-J32

5.25 V

Not Qualified

1048576 bit

4.75 V

BULK ERASE; 10K ERASE/WRITE CYCLES MIN.

e0

NOR TYPE

120 ns

12

KM29C010J-09

Samsung

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

NO

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

10 ms

1048576 bit

4.5 V

128

e0

.0001 Amp

13.97 mm

90 ns

5

YES

KM29C010J-12

Samsung

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

NO

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

10 ms

1048576 bit

4.5 V

128

e0

.0001 Amp

13.97 mm

120 ns

5

YES

KM29C010J-10

Samsung

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

NO

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

10 ms

1048576 bit

4.5 V

128

e0

.0001 Amp

13.97 mm

100 ns

5

YES

KM29C010J-20

Samsung

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

10

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

NO

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

10 ms

1048576 bit

4.5 V

AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS

128

e0

.0001 Amp

13.97 mm

200 ns

5

YES

KM29C010J-15

Samsung

FLASH

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

YES

5

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

NO

TIN LEAD

QUAD

R-PQCC-J32

5.5 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

10 ms

1048576 bit

4.5 V

128

e0

.0001 Amp

13.97 mm

150 ns

5

YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.