QCCJ Flash Memory 2,332

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F102B-100K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	1048576 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.5862 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V		e0			NOR TYPE	.0001 Amp	16.5862 mm	100 ns	5	YES
M29F002T-120K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.995 mm	120 ns	5	YES
M29W010B90K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		128KX8	128K	-40 Cel	8	YES			QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	2.7	YES
M28F101-200K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.5 V		e0			NOR TYPE	.00005 Amp	13.995 mm	200 ns	12	NO
M28F1001-15C313	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	150 ns	12
M29W040B55K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	3 V		e0			NOR TYPE	.0001 Amp	13.97 mm	55 ns	3	YES
M29F002BT55K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
M50FW080K5T	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm		13.97 mm	Not Qualified			8388608 bit	3 V		e0			NOR TYPE	.0001 Amp	11.43 mm	11 ns	3	NO
M28F201-90K6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	4.5 V					NOR TYPE		13.995 mm	90 ns	12
M29F102B-90XK6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.25 V	4.57 mm		16.5862 mm	Not Qualified		BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE	e0			NOR TYPE	.0001 Amp	16.5862 mm	90 ns	5	YES
M28F201-200K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.995 mm	200 ns	12	NO
M28F256-15XC113	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified			262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	150 ns	12
M29W040B70K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3			NOR TYPE	.0001 Amp	13.97 mm	70 ns	2.7	YES
M28F256-20C1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	200 ns	12
PSD813F1VA-20UI	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel		128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm		19 mm	Not Qualified	10 ms		1048576 bit	3 V					NOR TYPE		19.1 mm	20 ns	3.3
M29W040-150K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.4554 mm	Not Qualified			4194304 bit	2.7 V		e3			NOR TYPE	.000005 Amp	13.65 mm	150 ns	3	YES
M28F201-70K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.995 mm	70 ns	12	NO
M28F102-90K3	STMicroelectronics	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.5862 mm	Not Qualified			1048576 bit	4.5 V		e0			NOR TYPE	.0001 Amp	16.5862 mm	90 ns	12	NO
M50LPW080K5G	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		1MX8	1M	-20 Cel	16	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified			8388608 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm	11 ns	3	NO
M28F512-15C612	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			50 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32			100 Write/Erase Cycles		Not Qualified			524288 bit			e0			NOR TYPE	.0001 Amp		150 ns		NO
M28W201-150K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			30 mA	262144 words		NO	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-20 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified			2097152 bit			e0			NOR TYPE	.0001 Amp		150 ns		NO
PSD813F1AV-90JIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel		128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm		19 mm	Not Qualified	10 ms		1048576 bit	3 V					NOR TYPE		19.1 mm	90 ns	3.3
M28F512-12XC612	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			50 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32			100 Write/Erase Cycles		Not Qualified			524288 bit			e0			NOR TYPE	.0001 Amp		120 ns		NO
M29F040-120K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified			4194304 bit	4.5 V		e0			NOR TYPE	.00005 Amp	13.995 mm	120 ns	5	YES
M28F512-20C613	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			50 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32			1000 Write/Erase Cycles		Not Qualified			524288 bit			e0			NOR TYPE	.0001 Amp		200 ns		NO
M29W040B120K6F	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3			NOR TYPE	.0001 Amp	13.97 mm	90 ns	2.7	YES
M29F002BNT90K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M29F010B55K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified			1048576 bit	4.5 V		e0			NOR TYPE	.0001 Amp	14 mm	55 ns	5	YES
M28F1001-10C113	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.455 mm	Not Qualified			1048576 bit	4.5 V	1000 ERASE/PROGRAM CYCLES	e0			NOR TYPE	.0001 Amp	13.995 mm	100 ns	12	NO
M29F002BB90K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F151B-90K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			196608 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	192KX8	192K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		BOTTOM	1572864 bit	4.5 V					NOR TYPE		13.995 mm	90 ns	12
M29W040-100K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.4554 mm	Not Qualified			4194304 bit	3 V		e3			NOR TYPE	.000005 Amp	13.65 mm	100 ns	3	YES
M29W022BT55K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	55 ns	3	YES
M28F102-100K3	STMicroelectronics	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.5862 mm	Not Qualified			1048576 bit	4.5 V		e0			NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
M29F002BT45K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	45 ns	5	YES
M29F002T-90K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.995 mm	90 ns	5	YES
M28F101-90K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.5 V		e0			NOR TYPE	.00005 Amp	13.995 mm	90 ns	12	NO
M28F512-20XC3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified			524288 bit	4.75 V					NOR TYPE		13.995 mm	20 ns	12
M29F002BNT70K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M29W040B70K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	2.7 V		e3			NOR TYPE	.0001 Amp	13.97 mm	70 ns	2.7	YES
M28F201-70K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified			2097152 bit	4.5 V					NOR TYPE		13.995 mm	70 ns	12
M29W010B70K1F	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES			QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	2.7	YES
M28V101BK	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	3 V					NOR TYPE		13.995 mm	150 ns	12
M29F040-90K6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified			4194304 bit	4.5 V		e0			NOR TYPE	.00005 Amp	13.995 mm	90 ns	5	YES
M28F1001-12XC113	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	120 ns	12
M28F1001-20XC313	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	200 ns	12
M50FW040K1G	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.55 mm		11.43 mm	Not Qualified			4194304 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm	11 ns	3	NO
M29F010B70K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		128KX8	128K	-40 Cel	8	YES	Matte Tin (Sn)		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	4.5 V		e3	40	250	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.