QCCJ Flash Memory 2,332

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F256-90C3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		262144 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.995 mm	90 ns	12	NO
M28F256A-12C6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		32KX8	32K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		262144 bit	4.5 V	BULK ERASE	e0			NOR TYPE	.0002 Amp	13.995 mm	120 ns	12	NO
M29F002T-90XK1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified	TOP	2097152 bit	4.75 V	TOP BOOT BLOCK				NOR TYPE		13.995 mm	90 ns	5
M28F101-90K6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE		13.995 mm	90 ns	12
M29F002BB120K1F	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F512C	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			8	CHIP CARRIER			1.27 mm	70 Cel		64KX8	64K	0 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		524288 bit	4.5 V					NOR TYPE		13.995 mm	120 ns	12
M50LPW002K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-20 Cel	1,2,1,3	YES	TIN LEAD	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified	TOP	2097152 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.995 mm	11 ns	3	NO
M29W040B90K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	2.7 V		e0			NOR TYPE	.0001 Amp	13.97 mm	90 ns	2.7	YES
M29F002BNT90K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M29F010B45K3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.97 mm	45 ns	5	YES
M29F002BB120K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F201-150K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		2097152 bit	4.5 V					NOR TYPE		13.995 mm	150 ns	12
M29F040-120K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.995 mm	120 ns	5	YES
M29F102BB50K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.585 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	16.586 mm	50 ns	5	YES
M29W010B90K3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	2.7 V		e0			NOR TYPE	.0001 Amp	13.97 mm	90 ns	2.7	YES
M29F010B45K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.97 mm	45 ns	5	YES
M29F102B-100K6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	1048576 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.5862 mm	Not Qualified	BOTTOM	16777216 bit	4.5 V		e0			NOR TYPE	.0001 Amp	16.5862 mm	100 ns	5	YES
M50FLW040BK5P	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-20 Cel	8	YES	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified		4194304 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm	11 ns	3	NO
M29F102B-70XK1TR	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	70 Cel		64KX16	64K	0 Cel					QUAD	S-PQCC-J44	5.25 V	4.57 mm		16.5862 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE				NOR TYPE		16.5862 mm	70 ns	5
M29F002BNB120K1T	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M29W040B55K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	3 V		e0			NOR TYPE	.0001 Amp	13.97 mm	55 ns	3	YES
M28F101-15K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		128KX8	128K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE	e0			NOR TYPE	.0001 Amp	13.995 mm	150 ns	12	NO
M28F256A-12XC3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		32KX8	32K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		262144 bit	4.75 V	BULK ERASE	e0			NOR TYPE	.0002 Amp	13.995 mm	120 ns	12	NO
M28F256-12C312	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	120 ns	12
M28F151-90K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			30 mA	196608 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		192KX8	192K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		1572864 bit			e0			NOR TYPE	.0001 Amp		90 ns		NO
M28F101-70K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE	.00005 Amp	13.995 mm	70 ns	12	NO
M28F512-15C312	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			50 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32			100 Write/Erase Cycles		Not Qualified		524288 bit			e0			NOR TYPE	.0001 Amp		150 ns		NO
M29W022BT55K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	3 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	55 ns	3	YES
M29W040B120K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	8	YES	Matte Tin (Sn)		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	2.7 V		e3	40	250	NOR TYPE	.0001 Amp	13.97 mm	90 ns	2.7	YES
M29F002BNB70K3T	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F256A-12XC6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		32KX8	32K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		262144 bit	4.75 V	BULK ERASE	e0			NOR TYPE	.0002 Amp	13.995 mm	120 ns	12	NO
M28F102-150K6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.5 V	4.57 mm		16.5862 mm	Not Qualified		1048576 bit	4.5 V	10K ERASE/PROGRAM CYCLES				NOR TYPE		16.5862 mm	150 ns	12
M28F256-12C313	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	120 ns	12
M29F002T-70XK6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified	TOP	2097152 bit	4.75 V	TOP BOOT BLOCK				NOR TYPE		13.995 mm	70 ns	5
M29F002BNT55K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	55 ns	5	YES
M29F002BT120K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F101-150K6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		1048576 bit	4.5 V	10K ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	150 ns	12
M29W512B90K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		20 mA	65536 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		64KX8	64K	0 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified		524288 bit	2.7 V		e0			NOR TYPE	.0001 Amp	13.995 mm	90 ns	2.7	YES
M50FLW040BK1P	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		512KX8	512K	0 Cel	48,5	YES	MATTE TIN	YES	QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.43 mm	Not Qualified	TOP	4194304 bit	3 V		e3			NOR TYPE	.0001 Amp	13.97 mm	11 ns	3	NO
M28V201-200K5	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			20 mA	262144 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-20 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		2097152 bit			e0			NOR TYPE	.0001 Amp		200 ns		NO
M29F002BNB70K1F	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F256-15C3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		YES	MATTE TIN		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.455 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES	e3			NOR TYPE	.0001 Amp	13.995 mm	150 ns	12	NO
M28F256-20C312	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES				NOR TYPE		13.995 mm	200 ns	12
M29F040B70K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	4.5 V		e0			NOR TYPE	.0001 Amp	13.97 mm	70 ns	5	YES
M28F256AC	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER			1.27 mm	70 Cel		32KX8	32K	0 Cel					QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.455 mm	Not Qualified		262144 bit	4.5 V					NOR TYPE		13.995 mm	120 ns	12
M29W040-150K1R	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	CHIP CARRIER			1.27 mm	70 Cel		512KX8	512K	0 Cel					QUAD	R-PQCC-J32	3.6 V	3.56 mm		11.455 mm	Not Qualified		4194304 bit	2.7 V					NOR TYPE		13.995 mm	150 ns	3
M50FW080K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	70 Cel		1MX8	1M	0 Cel	16	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm		13.97 mm	Not Qualified		8388608 bit	3 V		e0			NOR TYPE	.0001 Amp	11.43 mm	11 ns	3	NO
M29F002BNT45K6E	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	Flash Memories	1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	45 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.