Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
536870912 words |
1.8 |
1 |
SMALL OUTLINE |
85 Cel |
512MX1 |
512M |
-40 Cel |
DUAL |
R-PDSO-N8 |
2 V |
166 MHz |
536870912 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
1.8 |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
6 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
8 mm |
2.7 |
|||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
30 mA |
33554432 words |
3 |
8 |
SMALL OUTLINE |
SOLCC8,.3 |
20 |
1.27 mm |
105 Cel |
3-STATE |
32MX8 |
32M |
-40 Cel |
Tin (Sn) |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
.85 mm |
100000 Write/Erase Cycles |
133 MHz |
6 mm |
SPI |
268435456 bit |
2.3 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00003 Amp |
8 mm |
3 |
|||||||||||||||||||||||
|
Cypress Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
38 mA |
4096 words |
3 |
3/3.3 |
16 |
SMALL OUTLINE |
SOP8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4KX16 |
4K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-N8 |
3.6 V |
2.159 mm |
100000 Write/Erase Cycles |
104 MHz |
5.283 mm |
Not Qualified |
SPI |
65536 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
5.283 mm |
3 |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
6 mm |
Not Qualified |
15 ms |
SPI |
16777216 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
8 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
15 ms |
SPI |
16777216 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
Renesas Electronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4194304 words |
1 |
SMALL OUTLINE |
125 Cel |
4MX1 |
4M |
-40 Cel |
DUAL |
R-PDSO-N8 |
1 |
3.6 V |
85 MHz |
4194304 bit |
1.7 V |
1.8 |
||||||||||||||||||||||||||||||||||||||||
Xtx Technology |
FLASH |
8 |
SON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
4294967296 words |
1 |
SMALL OUTLINE |
4GX1 |
4G |
DUAL |
R-XDSO-N8 |
3.6 V |
4294967296 bit |
2.7 V |
2.7 |
||||||||||||||||||||||||||||||||||||||||||||||
Xtx Technology |
FLASH |
8 |
SON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
1073741824 words |
1 |
SMALL OUTLINE |
1GX1 |
1G |
DUAL |
R-XDSO-N8 |
3.6 V |
1073741824 bit |
2.7 V |
2.7 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
30 mA |
33554432 words |
1.8 |
8 |
SMALL OUTLINE |
SOLCC8,.3 |
20 |
1.27 mm |
105 Cel |
3-STATE |
32MX8 |
32M |
-40 Cel |
Tin (Sn) |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
1.95 V |
.85 mm |
100000 Write/Erase Cycles |
166 MHz |
6 mm |
SPI |
268435456 bit |
1.65 V |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00003 Amp |
8 mm |
1.8 |
|||||||||||||||||||||||
|
Cypress Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
38 mA |
4096 words |
3 |
3/3.3 |
16 |
SMALL OUTLINE |
SOP8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4KX16 |
4K |
-40 Cel |
MATTE TIN |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-N8 |
3 |
3.6 V |
2.159 mm |
100000 Write/Erase Cycles |
104 MHz |
5.283 mm |
Not Qualified |
SPI |
65536 bit |
2.7 V |
e3 |
NOR TYPE |
.00001 Amp |
5.283 mm |
3 |
||||||||||||||||||||||
|
Toshiba |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
1073741824 words |
4 |
SMALL OUTLINE |
2 |
85 Cel |
1GX4 |
1G |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
4294967296 bit |
2.7 V |
IT ALSO ORGANIZED AS 4G X 1 |
NOT SPECIFIED |
NOT SPECIFIED |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
Cypress Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
38 mA |
4096 words |
3 |
3/3.3 |
16 |
SMALL OUTLINE |
SOP8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4KX16 |
4K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-N8 |
3 |
3.6 V |
2.159 mm |
100000 Write/Erase Cycles |
104 MHz |
5.283 mm |
Not Qualified |
SPI |
65536 bit |
2.7 V |
e3 |
40 |
260 |
NOR TYPE |
.00001 Amp |
5.283 mm |
3 |
||||||||||||||||||||
|
Microchip Technology |
CONFIGURATION MEMORY |
8 |
SON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
20 mA |
4194304 words |
3.3 |
1 |
SMALL OUTLINE |
SOLCC8,.25 |
1.27 mm |
85 Cel |
3-STATE |
4MX1 |
4M |
-40 Cel |
NICKEL GOLD |
DUAL |
HARDWARE |
S-PDSO-N8 |
3 |
3.63 V |
1.14 mm |
100000 Write/Erase Cycles |
33 MHz |
5.99 mm |
Not Qualified |
2-WIRE |
4194304 bit |
2.97 V |
e4 |
40 |
260 |
.001 Amp |
5.99 mm |
3.3 |
||||||||||||||||||||||||
Xtx Technology |
FLASH |
8 |
SON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
8589934592 words |
1 |
SMALL OUTLINE |
8GX1 |
8G |
DUAL |
R-XDSO-N8 |
3.6 V |
8589934592 bit |
2.7 V |
2.7 |
||||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
CONFIGURATION MEMORY |
8 |
SON |
SQUARE |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
50 mA |
16777216 words |
3.3 |
1 |
SMALL OUTLINE |
SOLCC8,.24 |
1.27 mm |
85 Cel |
16MX1 |
16M |
-40 Cel |
NICKEL GOLD |
DUAL |
S-XDSO-N8 |
3 |
3.63 V |
1.14 mm |
10000 Write/Erase Cycles |
10 MHz |
5.99 mm |
Not Qualified |
16777216 bit |
2.97 V |
e4 |
40 |
260 |
NOR TYPE |
.003 Amp |
5.99 mm |
3.3 |
||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
262144 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
256KX8 |
256K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
2097152 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000005 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
Intel |
FLASH |
COMMERCIAL |
40 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16K,8K,96K,128K |
65 mA |
262144 words |
5 |
NO |
5 |
8 |
SMALL OUTLINE |
TSSOP40,.8,20 |
Flash Memories |
.5 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
1,2,1,1 |
YES |
DUAL |
R-PDSO-N40 |
5.25 V |
1.2 mm |
100000 Write/Erase Cycles |
10 mm |
Not Qualified |
TOP |
2097152 bit |
4.75 V |
BOTTOM BOOT BLOCK |
NOR TYPE |
.0000012 Amp |
18.4 mm |
80 ns |
12 |
NO |
|||||||||||||||||||||
|
Micron Technology |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
SERIAL |
20 mA |
16777216 words |
1.8 |
1.8 |
8 |
SMALL OUTLINE |
SOLCC8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
16MX8 |
16M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
100000 Write/Erase Cycles |
108 MHz |
Not Qualified |
SPI |
134217728 bit |
NOR TYPE |
.00001 Amp |
|||||||||||||||||||||||||||||||||
Intel |
FLASH |
COMMERCIAL |
40 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16K,8K,96K,128K |
65 mA |
262144 words |
5 |
NO |
5 |
16 |
SMALL OUTLINE |
SOP44,.63 |
8 |
Flash Memories |
1.27 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
1,2,1,3 |
YES |
DUAL |
R-PDSO-N40 |
5.5 V |
2.95 mm |
13.3 mm |
Not Qualified |
BOTTOM |
4194304 bit |
4.5 V |
BOTTOM BOOT BLOCK |
NOR TYPE |
.0000012 Amp |
28.2 mm |
60 ns |
12 |
NO |
|||||||||||||||||||||
|
Cypress Semiconductor |
FLASH |
INDUSTRIAL |
8 |
SON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
38 mA |
4096 words |
3 |
3/3.3 |
16 |
SMALL OUTLINE |
SOP8,.3 |
Flash Memories |
20 |
1.27 mm |
105 Cel |
4KX16 |
4K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
S-PDSO-N8 |
3.6 V |
2.159 mm |
100000 Write/Erase Cycles |
104 MHz |
5.283 mm |
Not Qualified |
SPI |
65536 bit |
2.7 V |
NOR TYPE |
.00001 Amp |
5.283 mm |
3 |
|||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
SERIAL |
15 mA |
524288 words |
1.8/2 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
100000 Write/Erase Cycles |
30 MHz |
Not Qualified |
SPI |
4194304 bit |
NOR TYPE |
.00001 Amp |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
COMMERCIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
SERIAL |
15 mA |
524288 words |
1.8/2 |
8 |
SMALL OUTLINE |
SOLCC8,.16,25 |
Flash Memories |
20 |
.635 mm |
70 Cel |
512KX8 |
512K |
0 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
100000 Write/Erase Cycles |
30 MHz |
Not Qualified |
SPI |
4194304 bit |
NOR TYPE |
.00001 Amp |
|||||||||||||||||||||||||||||||||||
Onsemi |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
SERIAL |
15 mA |
524288 words |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
100000 Write/Erase Cycles |
30 MHz |
Not Qualified |
SPI |
4194304 bit |
NOR TYPE |
.00001 Amp |
|||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
131072 words |
8 |
SMALL OUTLINE |
125 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
1048576 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
65536 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
1.27 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
524288 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000005 Amp |
6 mm |
2.7 |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
SERIAL |
15 mA |
131072 words |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.11,20 |
Flash Memories |
.5 mm |
125 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
10000 Write/Erase Cycles |
25 MHz |
Not Qualified |
SPI |
1048576 bit |
NOR TYPE |
.0001 Amp |
|||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
SERIAL |
20 mA |
8388608 words |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.3 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
8MX8 |
8M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
100000 Write/Erase Cycles |
75 MHz |
Not Qualified |
SPI |
67108864 bit |
NOR TYPE |
.00001 Amp |
||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
TIN LEAD |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
e0 |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
1048576 words |
8 |
SMALL OUTLINE |
125 Cel |
1MX8 |
1M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
8388608 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
131072 words |
8 |
SMALL OUTLINE |
125 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
1048576 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4194304 words |
8 |
SMALL OUTLINE |
125 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
262144 words |
8 |
SMALL OUTLINE |
125 Cel |
256KX8 |
256K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
2097152 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
65536 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
1.27 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
524288 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000005 Amp |
6 mm |
2.7 |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4194304 words |
8 |
SMALL OUTLINE |
125 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
262144 words |
8 |
SMALL OUTLINE |
85 Cel |
256KX8 |
256K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
2097152 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4194304 words |
8 |
SMALL OUTLINE |
125 Cel |
4MX8 |
4M |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
33554432 bit |
2.7 V |
e0 |
NOR TYPE |
2.7 |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
131072 words |
8 |
SMALL OUTLINE |
125 Cel |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
1048576 bit |
2.7 V |
e0 |
NOR TYPE |
2.7 |
|||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3 |
2.5/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
4MX8 |
4M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
33554432 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
|||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
15 ms |
SPI |
16777216 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
262144 words |
8 |
SMALL OUTLINE |
85 Cel |
256KX8 |
256K |
-40 Cel |
DUAL |
R-PDSO-N8 |
3.6 V |
50 MHz |
2097152 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
2.7 |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
2097152 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
TIN LEAD |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
16777216 bit |
2.7 V |
e0 |
NOR TYPE |
.00001 Amp |
6 mm |
2.7 |
||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
AUTOMOTIVE |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
524288 words |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
20 |
1.27 mm |
125 Cel |
512KX8 |
512K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
10000 Write/Erase Cycles |
50 MHz |
Not Qualified |
SPI |
4194304 bit |
2.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.00005 Amp |
2.7 |
|||||||||||||||||||||||||||
|
STMicroelectronics |
FLASH |
INDUSTRIAL |
8 |
SON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
65536 words |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOLCC8,.25 |
Flash Memories |
1.27 mm |
85 Cel |
64KX8 |
64K |
-40 Cel |
DUAL |
HARDWARE/SOFTWARE |
R-PDSO-N8 |
3.6 V |
1 mm |
100000 Write/Erase Cycles |
50 MHz |
5 mm |
Not Qualified |
SPI |
524288 bit |
2.7 V |
40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST |
NOT SPECIFIED |
NOT SPECIFIED |
NOR TYPE |
.000005 Amp |
6 mm |
2.7 |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.