SON Flash Memory 612

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M25P80-VMP6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm		2.7
M25P80-VMP6	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel			TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		8388608 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.00001 Amp	6 mm		2.7
M25P05-AVMP6	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	65536 words	3		3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories		1.27 mm	85 Cel	64KX8	64K	-40 Cel			TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		524288 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e0			NOR TYPE	.000005 Amp	6 mm		2.7
M25P05-AVMP3	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			65536 words				8	SMALL OUTLINE					125 Cel	64KX8	64K	-40 Cel			TIN LEAD		DUAL		R-PDSO-N8		3.6 V			50 MHz						524288 bit	2.7 V		e0			NOR TYPE				2.7
M25P20-VME3	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			262144 words				8	SMALL OUTLINE					125 Cel	256KX8	256K	-40 Cel			TIN LEAD		DUAL		R-PDSO-N8		3.6 V			50 MHz						2097152 bit	2.7 V		e0			NOR TYPE				2.7
M25P05-AVMP3P	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			65536 words				8	SMALL OUTLINE					125 Cel	64KX8	64K	-40 Cel					DUAL		R-PDSO-N8		3.6 V			50 MHz						524288 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE				2.7
M25P80-VME3TG	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1048576 words				8	SMALL OUTLINE					125 Cel	1MX8	1M	-40 Cel					DUAL		R-PDSO-N8		3.6 V			50 MHz						8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE				2.7
M25P20-VME3TG	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			262144 words				8	SMALL OUTLINE					125 Cel	256KX8	256K	-40 Cel					DUAL		R-PDSO-N8		3.6 V			50 MHz						2097152 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE				2.7
M25PX64-VME6E	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			20 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25P05-AVME3T	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			65536 words				8	SMALL OUTLINE					125 Cel	64KX8	64K	-40 Cel			TIN LEAD		DUAL		R-PDSO-N8		3.6 V			50 MHz						524288 bit	2.7 V		e0			NOR TYPE				2.7
M25P05-AVME3TG	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			65536 words				8	SMALL OUTLINE					125 Cel	64KX8	64K	-40 Cel					DUAL		R-PDSO-N8		3.6 V			50 MHz						524288 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE				2.7
M25P10-AVMP3P/X	STMicroelectronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	131072 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories		1.27 mm	125 Cel	128KX8	128K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				10000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		1048576 bit						NOR TYPE	.0001 Amp
M25P05-AVME6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			65536 words				8	SMALL OUTLINE					85 Cel	64KX8	64K	-40 Cel					DUAL		R-PDSO-N8		3.6 V			50 MHz						524288 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE				2.7
M25P16-VME6T	STMicroelectronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel			TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	6 mm	Not Qualified		SPI		16777216 bit	2.7 V		e0			NOR TYPE	.00001 Amp	8 mm		2.7
MBM29LV004TC-90PNS	Infineon Technologies	FLASH	INDUSTRIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		16K,8K,32K,64K	35 mA	524288 words		YES	3/3.3	8	SMALL OUTLINE	SOLCC40,.4,20	Flash Memories		.5 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-N40				100000 Write/Erase Cycles			Not Qualified			TOP	4194304 bit			e0			NOR TYPE	.000005 Amp		90 ns		YES
MBM29LV004TC-12PNS	Infineon Technologies	FLASH	INDUSTRIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		16K,8K,32K,64K	35 mA	524288 words		YES	3/3.3	8	SMALL OUTLINE	SOLCC40,.4,20	Flash Memories		.5 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-N40				100000 Write/Erase Cycles			Not Qualified			TOP	4194304 bit			e0			NOR TYPE	.000005 Amp		120 ns		YES
MBM29LV004BC-70PNS	Infineon Technologies	FLASH	INDUSTRIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		16K,8K,32K,64K	35 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE	SOLCC40,.4,20	Flash Memories		.5 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-N40				100000 Write/Erase Cycles			Not Qualified			BOTTOM	4194304 bit			e0			NOR TYPE	.000005 Amp		70 ns		YES
MBM29LV004BC-90PNS	Infineon Technologies	FLASH	INDUSTRIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		16K,8K,32K,64K	35 mA	524288 words		YES	3/3.3	8	SMALL OUTLINE	SOLCC40,.4,20	Flash Memories		.5 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-N40				100000 Write/Erase Cycles			Not Qualified			BOTTOM	4194304 bit			e0			NOR TYPE	.000005 Amp		90 ns		YES
MBM29LV004BC-12PNS	Infineon Technologies	FLASH	INDUSTRIAL	40	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		16K,8K,32K,64K	35 mA	524288 words		YES	3/3.3	8	SMALL OUTLINE	SOLCC40,.4,20	Flash Memories		.5 mm	85 Cel	512KX8	512K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-N40				100000 Write/Erase Cycles			Not Qualified			BOTTOM	4194304 bit			e0			NOR TYPE	.000005 Amp		120 ns		YES
S25FL004D0LNFI3	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			23 mA	524288 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit						NOR TYPE	.000005 Amp
S25FL040A0LNFIV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			24 mA	524288 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3			100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit			e3	40	260	NOR TYPE	.000005 Amp
S25FL004D0LNFI1	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			23 mA	524288 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit						NOR TYPE	.000005 Amp
S25FL040A0LNFIV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			24 mA	524288 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3			100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit			e3	40	260	NOR TYPE	.000005 Amp
S25FL040A0LNFIV011	Infineon Technologies	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			24 mA	524288 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3			100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4194304 bit			e3	40	260	NOR TYPE	.000005 Amp
AT25DF021A-MHNHR-Y	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					125 Cel	2MX1	2M	-40 Cel					DUAL		R-PDSO-N8		3.6 V			85 MHz						2097152 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED					1.8
AT25DF021A-MAHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					125 Cel	2MX1	2M	-40 Cel					DUAL		R-PDSO-N8	1	3.6 V			85 MHz						2097152 bit	1.7 V					NOR TYPE				1.8
AT25DF021A-MHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					125 Cel	2MX1	2M	-40 Cel					DUAL		R-PDSO-N8		3.6 V			85 MHz						2097152 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE				1.8
AT25XE041B-MHNHR-Y	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE					125 Cel	4MX1	4M	-40 Cel					DUAL		R-PDSO-N8		3.6 V			85 MHz						4194304 bit	1.7 V									1.8
AT25SF041-XMHD-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			16 mA	524288 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	104 MHz		Not Qualified		SPI		4194304 bit						NOR TYPE	.000005 Amp
AT25DF011-MAHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1048576 words				1	SMALL OUTLINE					125 Cel	1MX1	1M	-40 Cel					DUAL		R-PDSO-N8	1	3.6 V			104 MHz						1048576 bit	1.7 V									1.8
M45PE80-VMS6TP	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		8388608 bit						NOR TYPE	.00001 Amp
M45PE80-VMS6TG	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		8388608 bit						NOR TYPE	.00001 Amp			2.7
M45PE80-VMS6P	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		8388608 bit						NOR TYPE	.00001 Amp
M25PX64-VME6TGB	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories		1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25P16SVMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	2097152 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		16777216 bit						NOR TYPE	.00001 Amp
M25PX80STVMP6TP	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	1048576 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit						NOR TYPE	.00001 Amp
M25PX64SVMD3PBA	Micron Technology	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories		1.27 mm	125 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX64STVMD6TP	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories		1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX16SOVMP6F	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	2097152 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		16777216 bit						NOR TYPE	.00001 Amp
M25PX64STVME3GA	Micron Technology	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories		1.27 mm	125 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX64SOVMD6TGB	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories		1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX16SVME6TPBA	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	2097152 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		16777216 bit						NOR TYPE	.00001 Amp
M25PX64-VMD3TPA	Micron Technology	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories		1.27 mm	125 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		67108864 bit						NOR TYPE	.00001 Amp
M25PX80STVMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	1048576 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		8388608 bit						NOR TYPE	.00001 Amp
M25P40-VMS6P/X	Micron Technology	FLASH		8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	524288 words			2.5/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	25 MHz		Not Qualified		SPI		4194304 bit						NOR TYPE	.00001 Amp
N25Q128A11TF840F	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			20 mA	16777216 words	1.8		1.8	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	108 MHz		Not Qualified		SPI		134217728 bit						NOR TYPE	.00001 Amp
M25P64-VME6TGB	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		20 mA	8388608 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.3	Flash Memories	20	1.27 mm	85 Cel	8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V			30	260	NOR TYPE	.0001 Amp	10.3 mm		2.7
M25PX32STVMP3EA	Micron Technology	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL			15 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25	Flash Memories	20	1.27 mm	125 Cel	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	75 MHz		Not Qualified		SPI		33554432 bit						NOR TYPE	.00001 Amp

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.