SOP Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
EPCS4SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	3.3	3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	512KX8	512K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			4194304 bit	2.7 V		e4	20	260		.00005 Amp
W25Q64JVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	67108864 bit	3 V	2.7V TO 3V @ 104MHZ	e3	30	260	NOR TYPE	.00005 Amp	5.28 mm	3.3
AT45DB321E-SHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm				33554432 bit	2.3 V		e4		260			5.29 mm	3
S25FL128SAGMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.41	2	Flash Memories	20	1.27 mm	85 Cel	3-STATE	32MX4	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	10.3 mm	3
AT25DF321A-SH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI	33554432 bit	2.7 V		e4		260	NOR TYPE	.00001 Amp	5.29 mm	2.7
S25FL128SAGMFIR01	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	33554432 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	10.3 mm	3
EPCS16SI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3.3	3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			16777216 bit	2.7 V		e4	20	260		.00005 Amp
SST26VF032B-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified		SPI	33554432 bit	2.7 V		e3		260	NOR TYPE	.000045 Amp	5.26 mm	3
W25Q128JVSIQTR	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm				134217728 bit	2.7 V	IT ALSO OPERATES AT 104MHZ CLOCK FREQ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		5.23 mm	3
W25Q128JVSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3.3		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	5.28 mm	3.3
AT45DB321E-SHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm				33554432 bit	2.3 V		e4					5.29 mm	3
SST26VF064B-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI	67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm	3
AT45DB321D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	33554432 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI	33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH	e3	40	260	NOR TYPE	.00001 Amp	5.29 mm	2.7
AT25DF321A-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI	33554432 bit	2.7 V		e4			NOR TYPE	.00001 Amp	5.29 mm	2.7
W25Q64JVSSIQTR	Winbond Electronics	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	18 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	67108864 bit	3 V	2.7V TO 3V @ 104MHZ	e3	30	260	NOR TYPE	.00005 Amp	5.28 mm	3.3
W25Q32JVSSIQTR	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				33554432 bit	2.7 V		e3		260	NOR TYPE		5.28 mm	3
MT25QL128ABA1ESE-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm				134217728 bit	2.7 V			30	260			5.285 mm	3
W25Q32JVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ	e3		260			5.28 mm	3
EPCS64SI16N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	8388608 words	3.3	3.3	8	SMALL OUTLINE			Flash Memories			85 Cel	3-STATE	8MX8	8M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G16	3	3.6 V		100000 Write/Erase Cycles	40 MHz		Not Qualified			67108864 bit	2.7 V		e4				.0001 Amp
SST25VF016B-50-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI	16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
SST26VF064BT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI	67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm	3
W25Q128JVSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3.3		8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	134217728 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	5.28 mm	3.3
SST25VF016B-50-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI	16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
S25FL064LABMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words	3		8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI	67108864 bit	2.7 V		e3		260	NOR TYPE	.00002 Amp	5.28 mm	3
AT45DB081E-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	1.8/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4		260	NOR TYPE	.00004 Amp	4.925 mm	3
M25P16-VMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	15 ms	SPI	16777216 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
SST26VF016B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI	16777216 bit	2.7 V		e3		260	NOR TYPE	.000025 Amp	4.9 mm	3
AT45DB641E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	2.3		1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm				67108864 bit	1.7 V		e4					5.29 mm	1.8
AT45DB161E-SHD-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	26 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI	16777216 bit	2.5 V		e4			NOR TYPE	.00001 Amp	5.29 mm	2.7
W25Q64JVSSIQT	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8388608 words	3.3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		8MX8	8M	-40 Cel	MATTE TIN	DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		133 MHz	5.28 mm				67108864 bit	3 V	ALSO OPERATES WITH 2.7V-3V SUPPLY AT 104MHZ	e3	30	260			5.28 mm	2.7
W25Q16JVSNIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm				16777216 bit	3 V	ALSO IT OPERATES AT 2.7V TO 3V WITH 104 MHZ		NOT SPECIFIED	NOT SPECIFIED			4.85 mm	3
MT25QL128ABA1ESE-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm				134217728 bit	2.7 V			30	260			5.285 mm	3
M25P16-VMN6PBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm	2.7
AT45DB321E-SHF2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm				33554432 bit	2.3 V		e4					5.29 mm	3
M25P16-VMN6TP	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified	15 ms	SPI	16777216 bit	2.7 V		e4			NOR TYPE	.00001 Amp	4.9 mm	2.7
AT45DB321D-SU-2.5	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel	MATTE TIN	DUAL			R-PDSO-G8		3.6 V	2.16 mm		50 MHz	5.24 mm	Not Qualified			33554432 bit	2.5 V		e3					5.29 mm	2.7
M25P40-VMN6TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.3 V		e4	30	260	NOR TYPE	.00001 Amp	4.9 mm	3
MT25QL128ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	35 mA		3		1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		16MX8	16M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.29 mm			SPI	134217728 bit	2.7 V		e3	30	260	NOR TYPE	.00005 Amp	5.29 mm	3
SST25VF040B-50-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm			SPI	4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
IS25LP064A-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI	67108864 bit	2.3 V		e3			NOR TYPE	.000035 Amp	5.28 mm	3
SST26VF032BT-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified		SPI	33554432 bit	2.7 V		e3			NOR TYPE	.000045 Amp	5.26 mm	3
EPCQ16ASI8N	Intel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	16777216 words	3.3		1	SMALL OUTLINE				20	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	100 MHz	3.9 mm				16777216 bit	2.7 V		e3	NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	4.9 mm	3.3
AT45DB161D-SU-2.5	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	2.7	2.7/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.24 mm	Not Qualified		SPI	16777216 bit	2.5 V	ORGANIZED AS 4096 PAGES OF 528 BYTES EACH	e3		260	NOR TYPE	.000025 Amp	5.29 mm	2.7
MT25QU01GBBB8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1073741824 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		1GX1	1G	-40 Cel		DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm				1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm	1.8
MT25QL256ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		268435456 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.3 mm		133 MHz	7.5 mm				268435456 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3
W25X40CLSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3	2.5/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI	4194304 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	4.9 mm	2.7
W25Q80DVSNIG	Winbond Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	1048576 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI	8388608 bit	2.7 V		e3			NOR TYPE	.00006 Amp	4.85 mm	3
AT45DB081E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	1048576 words	3	1.8/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm	Not Qualified		SPI	8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE	e4		260	NOR TYPE	.00004 Amp	5.29 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.