SOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
M25P40-VMN6PB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.3 V		e4	30	260	NOR TYPE	.00001 Amp	4.9 mm	3
W25Q256JVFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3.3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.31 mm	3.3
SST25VF080B-50-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		8388608 bit	2.7 V		e4		260	NOR TYPE	.00003 Amp	5.275 mm
MX25L6433FM2I-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	16777216 words	3		4	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel		16MX4	16M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT	e3	40	260	NOR TYPE	.00002 Amp	5.28 mm	3
MT25QL256ABA8ESF-0SITTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	35 mA	268435456 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			30	260	NOR TYPE	.000035 Amp	10.3 mm	3
EPCQ256SI16N	Intel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	268435456 words	3.3	3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	3-STATE	256MX1	256M	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL			R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	20 MHz	7.5 mm	Not Qualified	8 ms			268435456 bit	2.7 V		e4	40	260	NOR TYPE	.0001 Amp	10.3 mm	3
MT25QL512ABB8ESF-0SITTR	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	35 mA	67108864 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL		HARDWARE	R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm			SPI		536870912 bit	2.7 V					NOR TYPE	.0001 Amp	10.3 mm	3
SST26VF064B-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3		1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	5.26 mm	3
AT45DB161D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel	Matte Tin (Sn)	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		16777216 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 528 BYTES EACH	e3	40	260	NOR TYPE	.000025 Amp	5.29 mm	2.7
AT45DB041E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.3 V		e4			NOR TYPE	.00004 Amp	5.29 mm	3
W25Q32JVSSIM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	4194304 words	3.3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		33554432 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm	3.3
MT25QL512ABB8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		536870912 words	3		1	SMALL OUTLINE					1.27 mm	85 Cel		512MX1	512M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					536870912 bit	2.7 V			30	260			10.3 mm	3
MX25L12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	33554432 words	3	3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI		134217728 bit	2.7 V	IT ALSO CONFIGURED AS 128M X 1	e3			NOR TYPE	.00002 Amp	5.28 mm	3
S25FL256SAGMFIR01	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3			NOR TYPE	.0001 Amp	10.3 mm	3
SST26VF016B-104I/SN70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm	3
MT25QL01GBBB8ESF-0SITTR	Micron Technology	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	55 mA	1073741824 words	3		8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI	BOTTOM/TOP	1073741824 bit	2.7 V			30	260	NOR TYPE	.00006 Amp	10.3 mm	3
AT45DB041E-SSHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16 mA	4194304 words	3	1.8/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.3 V		e4		260	NOR TYPE	.00004 Amp	4.925 mm	3
MT25QU128ABA1ESE-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	1.8		1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL			S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm					134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		5.285 mm	1.8
S25FL512SAGMFI013	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	64094208 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V		e3	30	260	NOR TYPE	.0003 Amp	10.3 mm	3
SST25VF016B-50-4C-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		16777216 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.275 mm
SST26VF016B-104I/SN-RN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	4.9 mm	3
SST25VF080B-50-4I-S2AE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	8388608 words			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm			SPI		8388608 bit	2.7 V		e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
MX25L12833FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	3		8	SMALL OUTLINE		4			1.27 mm	85 Cel		16MX8	16M	-40 Cel	TIN	DUAL			R-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.23 mm					134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1	e3					5.28 mm	3
W25Q16JVSSIQ-T	Winbond Electronics	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel		2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.00005 Amp	5.23 mm	3
IS25LP016D-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3		8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel	Tin (Sn)	DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		133 MHz	3.9 mm					16777216 bit	2.3 V		e3		260	NOR TYPE		4.9 mm	3
IS25LP064A-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		67108864 words	3		1	SMALL OUTLINE					1.27 mm	105 Cel		64MX1	64M	-40 Cel		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					67108864 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm	3
SST25VF016B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	16777216 words		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	NICKEL PALLADIUM GOLD	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		16777216 bit	2.7 V		e4		260	NOR TYPE	.00002 Amp	5.275 mm
SST26VF016BT-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	25 mA	16777216 words	3		1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V		e3		260	NOR TYPE	.000025 Amp	4.9 mm	3
MX25L1606EM1I-12GTR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm			SPI		16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1				NOR TYPE	.00002 Amp	4.9 mm	3
N25Q128A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		134217728 bit	1.7 V			30	260	NOR TYPE	.00001 Amp	5.285 mm	3
IS25LP128-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	14 mA	16777216 words	3		8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			4-WIRE		134217728 bit	2.7 V						.000065 Amp	5.28 mm
N25Q128A13ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm	3
S70FL01GSAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	200 mA	134217728 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V		e3		260	NOR TYPE	.0002 Amp	10.3 mm	3
SST25VF040B-50-4I-SAF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	4194304 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
MX25L1606EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel	TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V		e3			NOR TYPE	.00002 Amp	4.9 mm	3
SST25VF512A-33-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	524288 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	512KX1	512K	0 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		524288 bit	2.7 V		e3	40	260	NOR TYPE	.000015 Amp	4.9 mm
MX25R6435FM2IH0	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16777216 words	1.8		4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel		DUAL			R-PDSO-G8		3.6 V	2.16 mm		80 MHz	5.23 mm					67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			5.28 mm	1.8
W25Q256JVFIQTR	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		33554432 words	3		8	SMALL OUTLINE		1			1.27 mm	85 Cel		32MX8	32M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.64 mm		133 MHz	7.49 mm					268435456 bit	2.7 V							10.31 mm	3
MX25L6433FM2I-08GTR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	17 mA	8388608 words	3.3		8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT				NOR TYPE	.00002 Amp	5.28 mm	3.3
SST26VF064B-104I/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	25 mA	67108864 words	3	3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel	MATTE TIN	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V		e3			NOR TYPE	.000045 Amp	10.3 mm	3
M25P128-VMF6TPB	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	10000 Write/Erase Cycles	50 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm	2.7
MX25V1635FM1ITR	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words	3		8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 8M X 2 BIT				NOR TYPE	.00005 Amp	4.9 mm	3
SST25VF010A-33-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	1048576 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V		e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
S25FL256SAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel	MATTE TIN	DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1	e3	30	260	NOR TYPE	.0001 Amp	10.3 mm	3
SST25VF010A-33-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	1048576 words		3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		1048576 bit	2.7 V		e3	10	260	NOR TYPE	.000015 Amp	4.9 mm
SST25WF080B-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words	1.8		1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel	MATTE TIN	DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI		8388608 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm	1.8
MT25QL01GBBB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		134217728 words	3		8	SMALL OUTLINE		1			1.27 mm	105 Cel		128MX8	128M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					1073741824 bit	2.7 V							10.3 mm	3
MX25L51245GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		134217728 words	3		4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel		DUAL			R-PDSO-G16		3.6 V	2.65 mm		166 MHz	7.52 mm					536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH		NOT SPECIFIED	NOT SPECIFIED			10.3 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.