SOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FL128SAGMFM000	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260			10.3 mm		3
SST26VF016B-104I/SM70SVAO	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		16777216 bit	2.7 V					NOR TYPE	.000045 Amp	5.26 mm		3
AT25SF321B-SHB-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.24 mm			SPI		33554432 bit	2.7 V		e4		260	NOR TYPE	.000025 Amp	5.29 mm		3
IS25LP032D-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel			Tin (Sn)		DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					33554432 bit	2.3 V		e3	NOT SPECIFIED	NOT SPECIFIED			4.9 mm		3
M25P05-AVMN6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	65536 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		524288 bit	2.7 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST	e4			NOR TYPE	.000005 Amp	4.9 mm		2.7
SST26WF080B-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		8388608 bit	1.65 V		e3			NOR TYPE	.000005 Amp	4.9 mm		1.8
IS25LP080D-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		1MX8	1M	-40 Cel			Tin (Sn)		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		133 MHz	3.9 mm					8388608 bit	2.3 V		e3	10	260	NOR TYPE		4.9 mm		3
MX25V1006FM1I/TR	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	131072 words	3.3			8	SMALL OUTLINE	SOP8,.25	1		20	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL		HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		1048576 bit	2.7 V	ALSO OPERATES AT 2.3-2.7V@50MHZ		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000001 Amp	4.9 mm		3.3
S25FL128SAGMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3	30	260			10.3 mm		3
IS25LP040E-JNLE-TR	Integrated Silicon Solution	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	524288 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		4194304 bit	2.3 V			30	260	NOR TYPE	.000018 Amp	4.9 mm		3
IS25LP064A-JMLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		67108864 bit	2.3 V		e3	10	260	NOR TYPE	.000035 Amp	10.3 mm		3
M25P80-VMW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V		e3			NOR TYPE	.00001 Amp	5.3 mm		2.7
MX25L12845GM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.23 mm					134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1	e3					5.28 mm		3
MX25U6435FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8		1.8	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	10	1.27 mm	85 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI		67108864 bit	1.65 V	CAN BE ORGANISED AS 64 MBIT X 1	e3	40	260	NOR TYPE	.00002 Amp	5.28 mm		1.8
MX25V1006FM1I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words	3.3			2	SMALL OUTLINE		1			1.27 mm	85 Cel		512KX2	512K	-40 Cel			TIN		DUAL			R-PDSO-G8		3.6 V	1.75 mm		80 MHz	3.9 mm					1048576 bit	2.7 V	ALSO OPERATES 2.3-2.7V SUP @ 50MHZ	e3					4.9 mm		3.3
S25FL064LABMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm		3
SST25VF040B-50-4C-S2AF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified		SPI		4194304 bit	2.7 V		e4			NOR TYPE	.00003 Amp	5.275 mm
AT45DB021D-SSH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		66 MHz	3.9 mm					2097152 bit	2.7 V		e4		260			4.925 mm		2.7
AT45DB081D-SSU-SL954	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		8MX1	8M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 256 BYTES EACH	e3			NOR TYPE	.00001 Amp	4.925 mm		2.7
IS25LP032D-JBLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					33554432 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED			5.28 mm		3
M25P20-VMN6TPB	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	262144 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.3 V	40 MHZ CLOCK FREQUENCY AVAILABLE UPON REQUEST		30	260	NOR TYPE	.000005 Amp	4.9 mm		2.7
MX25L6433FM2I-08Q	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	2		20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		67108864 bit	2.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	5.28 mm		3.3
S25FL064LABMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		108 MHz	7.5 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1	e3					10.3 mm		3
SST25WF040B-40I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	1.8			1	SMALL OUTLINE	SOP8,.23			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		1.95 V	1.75 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm			SPI		4194304 bit	1.65 V		e3			NOR TYPE	.00001 Amp	4.9 mm		1.8
MT25QU01GBBB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			128057344 words	1.8			8	SMALL OUTLINE		1			1.27 mm	105 Cel		128MX8	128M	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					1024458752 bit	1.7 V			30	260			10.3 mm		1.8
MX25U12835FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL			R-PDSO-G8		2 V	2.16 mm		104 MHz	5.23 mm					134217728 bit	1.65 V	IT CAN ALSO BE CONFIGURABLE AS 128MX1		NOT SPECIFIED	NOT SPECIFIED			5.28 mm		1.8
S25FL064LABMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL			S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3			NOR TYPE		5.28 mm		3
SST26VF064BT-104V/SO	Microchip Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3			1	SMALL OUTLINE	SOP16,.4			100	1.27 mm	105 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm			SPI		67108864 bit	2.7 V		e3	40	260	NOR TYPE	.000045 Amp	10.3 mm		3
AT45DB021E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		70 MHz	5.24 mm					2097152 bit	1.65 V		e4		260	NOR TYPE		5.29 mm		2.7
MX25L1606EMI-12G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	1	Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	86 MHz	7.52 mm	Not Qualified		SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm		3
MX25U3235FM2I-10G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	1.8		1.8	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	10	1.27 mm	85 Cel		8MX4	8M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI		33554432 bit	1.65 V	CAN BE ORGANISED AS 32 MBIT X 1	e3			NOR TYPE	.00002 Amp	5.28 mm		1.8
SST25VF020B-80-4C-SAE	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	8	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	256KX8	2M	0 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V		e3			NOR TYPE	.00003 Amp	4.9 mm
AT25DF641A-SH-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		40 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	85 MHz	5.24 mm	Not Qualified		SPI		67108864 bit	2.7 V		e4			NOR TYPE	.00002 Amp	5.29 mm		2.7
AT25DN512C-SSHF-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	65536 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		524288 bit	2.3 V		e4			NOR TYPE	.000015 Amp	4.925 mm		3
W25Q64CVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm	Not Qualified		SPI		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm	8.5 ns	2.7
AT25SF041-SSHDHR-T	Adesto Technologies	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE						125 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V			85 MHz						4194304 bit	2.5 V									2.7
IS25LP040E-JNLE	Integrated Silicon Solution	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	524288 words	3			8	SMALL OUTLINE	SOP8,.25			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		4194304 bit	2.3 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000018 Amp	4.9 mm		3
MT25QU128ABB8ESF-0AUT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm			SPI		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	10.3 mm		1.8
MX25L12833FMI-10G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE		4			1.27 mm	85 Cel		16MX8	16M	-40 Cel			TIN		DUAL			R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.52 mm					134217728 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 64M X 2 AND 128M X 1	e3					10.3 mm		3
MX25V1635FM2I	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		4MX4	4M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	2.16 mm		80 MHz	5.23 mm					16777216 bit	2.3 V	ALSO IT CAN BE CONFIGURED AS 16M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			5.28 mm		3
N25Q256A83ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V			30	260	NOR TYPE		10.3 mm		3
S25FL064LABMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH	e3					5.28 mm		3
S25FL512SDSMFBG10	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	80 MHz	7.5 mm			SPI		512753664 bit	2.7 V		e3			NOR TYPE	.0003 Amp	10.3 mm		3
SST25VF020B-80-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	2097152 words			3/3.3	8	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	256KX8	2M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V		e3	40	260	NOR TYPE	.00003 Amp	4.9 mm
AT25DF641-S3H-B	Atmel	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		19 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	1000000 Write/Erase Cycles	85 MHz	7.5 mm	Not Qualified	5 ms	SPI		67108864 bit	2.7 V		e4			NOR TYPE	.000005 Amp	10.3 mm		2.7
MX66L1G45GMI-08G	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			4	SMALL OUTLINE		2			1.27 mm	85 Cel		256MX4	256M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.65 mm		166 MHz	7.52 mm					1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT		NOT SPECIFIED	NOT SPECIFIED			10.3 mm		3
AM29F400BT-90SC	Spansion	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL			R-PDSO-G44	3	5.5 V	2.8 mm	1000000 Write/Erase Cycles		13.3 mm	Not Qualified			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK	e0		260	NOR TYPE	.000005 Amp	28.2 mm	90 ns	5	YES
AM29F400BT-90SI	Cypress Semiconductor	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		256KX16	256K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G44		5.5 V	2.8 mm			13.3 mm				TOP	4194304 bit	4.5 V	TOP BOOT BLOCK	e0			NOR TYPE		28.2 mm	90 ns	5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.