TSOP Flash Memory 187

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F008AVB-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008SZB-70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008ASB-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F008AEB80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008AVT-120BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008AZT-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	70 ns	3	NO
TMS28F008SZB-80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F008AVB-80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F008AZB-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	80 ns	3	NO
TMS28F008SZT-70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008AEB-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008AZB-70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	70 ns	3	NO
TMS28F008AZT70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	125 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	70 ns	3	NO
TMS28F008AVT80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008AST-70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F008SZT-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008AET80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008SEB-12BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008AZB-70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	70 ns	3	NO
TMS28F008SEB-12CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008AVB-120BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008SET-12BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008SET-10BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008SZT-70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008SZT-80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F008AVB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008AEB-80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008AVB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008AET-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008AZB80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	125 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; BOTTOM BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	80 ns	3	NO
TMS28F008AVT-80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; TOP BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F008AEB-70BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F008AZB-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	70 ns	3	NO
TMS28F008ASB80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008AVB-100CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008AVT120BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008ASB70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3
TMS28F008AST-80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008SZB-70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008SZT-70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	70 ns	3
TMS28F008AST-80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008SZB-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	1MX8	1M	0 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F008AEB-70CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F008AZT80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	125 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; TOP BOOT BLOCK	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	80 ns	3	NO
TMS28F008ASB80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	125 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	120 ns	3
TMS28F008SZT-80BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK			NOR TYPE		18.4 mm	80 ns	3
TMS28F008ASB-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20	Flash Memories	1.27 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK			NOR TYPE	.000008 Amp	18.4 mm	120 ns	3	NO
TMS28F008AVB70BDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	1MX8	1M	-40 Cel			DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; BOTTOM BOOT BLOCK			NOR TYPE		18.4 mm	100 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.