TSOP Flash Memory 187

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F008AST-70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		TOP	8388608 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE	.000008 Amp	18.4 mm		100 ns	3	NO
TMS28F008AZB-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK					NOR TYPE	.000008 Amp	18.4 mm		80 ns	3	NO
TMS28F008SET-12CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F008SZB-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
TMS28F008AZB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	125 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE VPP=3V/5V/12V; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		70 ns	3	NO
TMS28F008AZB80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	125 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES			DUAL		R-PDSO-G40		5.5 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm		80 ns	3	NO
TMS28F008AVB100BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
TMS28F008AVB120BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F008AET-70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	70 Cel		1MX8	1M	0 Cel	1,2,1,7	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	10000 Write/Erase Cycles		10 mm	Not Qualified		TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE	.000008 Amp	18.4 mm		100 ns	3	NO
TMS28F008AEB-80CDCDE	Texas Instruments	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		1.27 mm	85 Cel		1MX8	1M	-40 Cel	1,2,1,7	YES			DUAL		R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK					NOR TYPE	.000008 Amp	18.4 mm		120 ns	3	NO
TMS28F008ASB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	3 V	10000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
TMS28F008AVT-100CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
TMS28F008SZB-80BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
TMS28F008AET70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER SELECTABLE TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	3
TMS28F008SEB-12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F008AVB120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
LE28DW8102T-90	Onsemi	FLASH	OTHER	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	60 mA	524288 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE	TSOP48(UNSPEC)		Flash Memories			80 Cel		512KX16	512K	-40 Cel	16	NO			DUAL		R-PDSO-G48							Not Qualified			8388608 bit							NOR TYPE	.00004 Amp			90 ns		YES
LE25FU406BTT	Onsemi	FLASH	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			15 mA	524288 words			2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified	SPI		4194304 bit							NOR TYPE	.00001 Amp
LE25FW806TT	Onsemi	FLASH	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	70 Cel		1MX8	1M	0 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		8388608 bit							NOR TYPE	.00001 Amp
LE25FW203ATT	Onsemi	FLASH	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			15 mA	262144 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	70 Cel		256KX8	256K	0 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified	SPI		2097152 bit							NOR TYPE	.00001 Amp
LE25FW403ATT	Onsemi	FLASH	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			15 mA	524288 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	70 Cel		512KX8	512K	0 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified	SPI		4194304 bit							NOR TYPE	.00001 Amp
LE25FW806TT-A	Onsemi	FLASH	INDUSTRIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	50 MHz		Not Qualified	SPI		8388608 bit							NOR TYPE	.00005 Amp
LE25FS406TT	Onsemi	FLASH	COMMERCIAL	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			15 mA	524288 words			1.8/2	8	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		Flash Memories	20	1.27 mm	70 Cel		512KX8	512K	0 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles	30 MHz		Not Qualified	SPI		4194304 bit							NOR TYPE	.00001 Amp
S29AL008J55TFN023	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	125 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			BOTTOM	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFN020	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	125 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			BOTTOM	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFN013	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	125 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			TOP	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	85 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			BOTTOM	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	85 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			TOP	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	85 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			TOP	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	85 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			BOTTOM	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29AL008J55TFN010	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	524288 words	3			16	SMALL OUTLINE, THIN PROFILE	TSOP48,.8,20	8			.5 mm	125 Cel	NO	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm			TOP	8388608 bit	2.7 V							.000005 Amp	18.4 mm	YES	55 ns	3	YES
TC58V64FT(EL)	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	30 mA	8388608 words		NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40							Not Qualified			67108864 bit			512	e0				.0001 Amp			35 ns		NO
TC58V64AFT(EL)	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	30 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL		R-PDSO-G40							Not Qualified			67108864 bit			512	e0				.0001 Amp			35 ns		NO
TC58V64BTG	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	30 mA	8388608 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES		YES	DUAL		R-PDSO-G40							Not Qualified			67108864 bit			512					.0001 Amp			35 ns		NO
TC58V64BFT(EL)	Toshiba	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	30 mA	8388608 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES		YES	DUAL		R-PDSO-G40							Not Qualified			67108864 bit			512					.0001 Amp			35 ns		NO
K9F6408U0C-QCB0	Samsung	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES		YES	DUAL		R-PDSO-G40	3						Not Qualified			67108864 bit			512			260		.00005 Amp			35 ns		NO
K9F6408U0C-QIB0T	Samsung	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G40	1						Not Qualified			67108864 bit			512	e3				.00005 Amp			35 ns		NO
K9F6408U0C-TCB0T	Samsung	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES		YES	DUAL		R-PDSO-G40	1						Not Qualified			67108864 bit			512					.00005 Amp			35 ns		NO
KM29N040TS	Samsung	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K	20 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		512KX8	512K	0 Cel	128	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40							Not Qualified			4194304 bit			32	e0				.00005 Amp			50 ns		NO
K9F6408U0C-QCB0T	Samsung	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G40	1						Not Qualified			67108864 bit			512	e3				.00005 Amp			35 ns		NO
K9F6408U0C-TIB0T	Samsung	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES		YES	DUAL		R-PDSO-G40	1						Not Qualified			67108864 bit			512					.00005 Amp			35 ns		NO
K9F6408U0C-QIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES		YES	DUAL		R-PDSO-G40	3						Not Qualified			67108864 bit			512			260		.00005 Amp			35 ns		NO
KM29V040TS	Samsung	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K	10 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		512KX8	512K	0 Cel	128	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40							Not Qualified			4194304 bit			32	e0				.00005 Amp			50 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.