TSOP1 Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28F001TI-90TT	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES			DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE	.000001 Amp	18.4 mm		90 ns	12	NO
CAT28F010TI90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	12	NO
CAT28F001T-70BT	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		18.4 mm		70 ns	12
CAT28F010T-12T	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		128KX8	128K	0 Cel		YES			DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	18.4 mm		120 ns	12	NO
CAT28F010HI-90TE13	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		18.4 mm		90 ns	12
CAT28F512TI-20	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64KX8	64K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm		200 ns	12
CAT28F001TI-12TT	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES			DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE	.000001 Amp	18.4 mm		120 ns	12	NO
CAT28F001HA-90T	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES	Tin (Sn)		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK	e3			NOR TYPE	.000001 Amp	18.4 mm		90 ns	12	NO
CAT28F010V5TI-12	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE		12.4 mm		120 ns	5
CAT28F010T-15TE7	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE		18.4 mm		150 ns	12
CAT28F512T14-12	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX8	64K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm		120 ns	12
CAT28F010HI-12TE7	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		18.4 mm		120 ns	12
CAT28F001TI-90TE7	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A		1.2 mm		8 mm	Not Qualified		1048576 bit		DEEP POWER-DOWN	e0			NOR TYPE		18.4 mm		90 ns	12
CAT28F010TI-15	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V		e0			NOR TYPE		12.4 mm		150 ns	12
CAT28F512H-12TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX8	64K	0 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e3					18.4 mm		120 ns	12
CAT28F010H-90T	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		128KX8	128K	0 Cel		YES	Matte Tin (Sn)		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE	.0001 Amp	18.4 mm		90 ns	12	NO
CAT28F512T14-15TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX8	64K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm		150 ns	12
CAT28F512H-20	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX8	64K	0 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e3					12.4 mm		200 ns	12
CAT28F001T-15BT	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		18.4 mm		150 ns	12
CAT28F010V5TI-20	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE		12.4 mm		200 ns	5
CAT28F001HA-12TT	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES	Tin (Sn)		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK	e3			NOR TYPE	.000001 Amp	18.4 mm		120 ns	12	NO
CAT28F001HI-90TT	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		128KX8	128K	-40 Cel	1,2,1	YES	Tin (Sn)		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK	e3			NOR TYPE	.000001 Amp	18.4 mm		90 ns	12	NO
CAT28F512TA-90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	105 Cel		64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V		e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	12	NO
CAT28F020T-20TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		256KX8	256K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		2097152 bit	4.5 V		e0			NOR TYPE		18.4 mm		200 ns	12
CAT28F512T14-90TE7	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX8	64K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm		90 ns	12
CAT28F010TA-90	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	105 Cel		128KX8	128K	-40 Cel		YES			DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V					NOR TYPE	.0001 Amp	18.4 mm		90 ns	12	NO
CAT28F512H14I-90TE13	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64KX8	64K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e3					12.4 mm		90 ns	12
CAT28F010H-12TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		128KX8	128K	0 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V		e3			NOR TYPE		18.4 mm		120 ns	12
CAT28F512H14-12TE13	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		64KX8	64K	0 Cel			MATTE TIN		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e3					12.4 mm		120 ns	12
CAT28F010T-70T	Onsemi	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 10 YEARS	e0			NOR TYPE		18.4 mm		70 ns	12
CAT28F512T14I-12TE13	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64KX8	64K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V		e0					12.4 mm		120 ns	12
CAT28F001TA-70B	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	105 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK	e0			NOR TYPE		18.4 mm		70 ns	12
CAT28F001TA-15BT	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	105 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm		8 mm	Not Qualified	BOTTOM	1048576 bit	4.5 V	HARDWARE DATA PROTECTION; 100000 PROGRAM/ERASE CYCLES; 10 YEARS DATA RETENTION	e0			NOR TYPE		18.4 mm		150 ns	12
CAT28F001TA-12T	Onsemi	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	105 Cel		128KX8	128K	-40 Cel	1,2,1	YES			DUAL	R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE	.000001 Amp	18.4 mm		120 ns	12	NO
M28W231-120N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	2097152 bit	2.7 V					NOR TYPE		18.4 mm		120 ns	12
M50FW080N1TG	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	64K	60 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		1MX8	1M	0 Cel	16	YES			DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	3 V			NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M29F002B-120N1TR	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK	e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M28F210-70N1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		256KX8	256K	0 Cel					DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK				NOR TYPE		18.4 mm		70 ns	12
M29F002BNT70N3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F220-90XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm		90 ns	12
M28W800T120N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3	NO	1.65/2.2,3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	TIN LEAD		DUAL	R-PDSO-G48		3.3 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	2.7	NO
M29W040-200N5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V		e0			NOR TYPE	.000005 Amp	18.4 mm		200 ns	3	YES
M29F016D90N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		2MX8	2M	-40 Cel	32	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified		16777216 bit	4.5 V		e3/e6	40	260	NOR TYPE	.00015 Amp	18.4 mm	YES	90 ns	5	YES
M29R800B-120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V		e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
M29R008B-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	2.7 V					NOR TYPE		18.4 mm		150 ns	3
M28W320BT85N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK	e0			NOR TYPE	.000005 Amp	18.4 mm	YES	85 ns	3	NO
M29F040B55N6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V		e0	30	240	NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M29F002BNB120N6F	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.