TSOP1 Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M29F105B-70XN6TR

STMicroelectronics

FLASH

INDUSTRIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-G40

5.25 V

1.2 mm

10 mm

Not Qualified

BOTTOM

1048576 bit

4.75 V

100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE

NOR TYPE

12.4 mm

70 ns

5

M29W004BB120N1

STMicroelectronics

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

512KX8

512K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

2.7

YES

M29F200B-90XN1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE, THIN PROFILE

16

.5 mm

70 Cel

256KX8

256K

0 Cel

DUAL

R-PDSO-G48

5.25 V

1.2 mm

12 mm

Not Qualified

BOTTOM

2097152 bit

4.75 V

NOR TYPE

18.4 mm

90 ns

5

M28W800CT70N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

524288 words

3

NO

3,3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

8,15

YES

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.000005 Amp

18.4 mm

YES

70 ns

3

NO

M29F002BNT70N3T

STMicroelectronics

FLASH

AUTOMOTIVE

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

125 Cel

256KX8

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

TOP

2097152 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M28W160ECT100N6S

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

TIN

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e3

NOR TYPE

18.4 mm

100 ns

3

M29W800AT90N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

20

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

3 V

20 YEARS DATA RETENTION; TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

2.7

YES

M29F100B-120XN3TR

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX8

128K

-40 Cel

1,2,1,1

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.25 V

1.2 mm

12 mm

Not Qualified

BOTTOM

1048576 bit

4.75 V

CONFG AS 64K X 16; BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

120 ns

5

YES

M29W040-150NZ6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

40 mA

524288 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

Flash Memories

.5 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

2.7 V

e0

NOR TYPE

.000005 Amp

12.4 mm

150 ns

3

YES

M29W800AT90N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

20

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

3 V

20 YEARS DATA RETENTION; TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

2.7

YES

M39432-12VNC5T

STMicroelectronics

FLASH

OTHER

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

3.3

EEPROM+FLASH

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Other Memory ICs

10

.5 mm

85 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

4194304 bit

3 V

100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; BUILT-IN 256K BIT EEPROM

e0

NOR TYPE

.000002 Amp

18.4 mm

120 ns

3

M29W160ET90N6T

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

Tin/Lead (Sn/Pb)

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

90 ns

3

YES

M29F102BB55N1

STMicroelectronics

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,4K,16K,32K

20 mA

65536 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP40,.56,20

Flash Memories

.5 mm

70 Cel

64KX16

64K

0 Cel

1,2,1,1

YES

MATTE TIN

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

Not Qualified

BOTTOM

1048576 bit

4.5 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

.0001 Amp

12.4 mm

55 ns

5

YES

M29W640DB70N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

4194304 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

67108864 bit

3 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29F100B-70XN3TR

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

65536 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

3-STATE

64KX16

64K

-40 Cel

1,2,1,1

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.25 V

1.2 mm

12 mm

Not Qualified

BOTTOM

1048576 bit

4.75 V

CONFG AS 64K X 16; BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M50FLW080ANB5

STMicroelectronics

FLASH

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4K,64K

60 mA

1048576 words

3.3

NO

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

Flash Memories

.5 mm

85 Cel

1MX8

1M

-20 Cel

48,13

YES

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

8 mm

Not Qualified

8388608 bit

3 V

e0

NOR TYPE

.0001 Amp

12.4 mm

11 ns

3

NO

M39432-20VNC1T

STMicroelectronics

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

524288 words

3.3

EEPROM+FLASH

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Other Memory ICs

10

.5 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

4194304 bit

3 V

100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; BUILT-IN 256K BIT EEPROM

e0

NOR TYPE

.000002 Amp

18.4 mm

200 ns

3

M29W800T-100N5

STMicroelectronics

FLASH

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

16

Flash Memories

.5 mm

85 Cel

3-STATE

1MX8

1M

-20 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

e0

NOR TYPE

.0001 Amp

18.4 mm

100 ns

3

YES

M28F201-120XN6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

256KX8

256K

-40 Cel

YES

TIN LEAD

DUAL

R-PDSO-G32

5.25 V

1.2 mm

8 mm

Not Qualified

2097152 bit

4.75 V

e0

NOR TYPE

.0001 Amp

18.4 mm

120 ns

12

NO

M29W400B-90N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

3 V

CONFG AS 256K X 16; BOTTOM BOOT BLOCK

e0

NOR TYPE

.00005 Amp

18.4 mm

90 ns

3

YES

M29W040B120N6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

20 mA

524288 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

512KX8

512K

-40 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

2.7 V

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

2.7

YES

M28W640ECB90N1S

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

90 ns

3

M29F800DB90N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.00015 Amp

18.4 mm

YES

70 ns

5

YES

M29F200B-120XN6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE, THIN PROFILE

16

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G48

5.25 V

1.2 mm

12 mm

Not Qualified

BOTTOM

2097152 bit

4.75 V

NOR TYPE

18.4 mm

120 ns

5

M29W400T-120N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

3-STATE

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.00005 Amp

18.4 mm

120 ns

2.7

YES

M29W160EB90N6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

BOTTOM BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

90 ns

3

YES

M28W640ECB90N1E

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

18.4 mm

90 ns

3

M29F400B-70N3

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

3-STATE

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M29F400T-120N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

120 ns

5

YES

M28W640CT90N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

TOP BOOT BLOCK

NOR TYPE

18.4 mm

90 ns

3

M28W640FCT85N1E

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

e3

NOR TYPE

18.4 mm

85 ns

3

M29W400BT55N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

3 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

55 ns

3

YES

M28F221-90YN6TR

STMicroelectronics

FLASH

INDUSTRIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256KX8

256K

-40 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

90 ns

12

M28W640FCT70N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

18.4 mm

70 ns

3

M29DW324DB90N6T

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

30 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

BOTTOM BOOT BLOCK

e6

NOR TYPE

.0001 Amp

18.4 mm

YES

90 ns

3

YES

M28F421-90N6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-40 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

100000 PROGRAM/ERASE CYCLES

NOR TYPE

18.4 mm

90 ns

12

M28W800CB85N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

524288 words

3

NO

3,3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

8,15

YES

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.000005 Amp

18.4 mm

YES

85 ns

3

NO

M29W400B-150N5TR

STMicroelectronics

FLASH

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

3-STATE

256KX16

256K

-20 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.00005 Amp

18.4 mm

150 ns

2.7

YES

M28W160BTB90N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

2.7

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

18.4 mm

90 ns

2.7

M29F040-120XN5

STMicroelectronics

FLASH

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

60 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

3-STATE

512KX8

512K

-20 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G32

5.25 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

4.75 V

e0

NOR TYPE

.0001 Amp

18.4 mm

120 ns

5

YES

M28F411-60N5TR

STMicroelectronics

FLASH

OTHER

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

Not Qualified

TOP

4194304 bit

4.5 V

NOR TYPE

18.4 mm

60 ns

12

M29W800T-150N6TR

STMicroelectronics

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

16

Flash Memories

.5 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

150 ns

3

YES

M28F101-90N6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

3-STATE

128KX8

128K

-40 Cel

YES

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

e0

NOR TYPE

.00005 Amp

18.4 mm

90 ns

12

NO

M28W640CT80N1T

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

3 V

TOP BOOT BLOCK

NOR TYPE

18.4 mm

80 ns

3

M29W160DT70N1F

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

1MX16

1M

0 Cel

TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

3 V

TOP BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

18.4 mm

70 ns

3

M29DW640D70N1F

STMicroelectronics

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM/TOP

67108864 bit

2.7 V

BOTTOM BOOT BLOCK

e3/e6

30

260

NOR TYPE

18.4 mm

70 ns

3

M29W400T-100N5TR

STMicroelectronics

FLASH

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

3-STATE

256KX16

256K

-20 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.00005 Amp

18.4 mm

100 ns

2.7

YES

M29W008B-150N6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

1048576 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

3-STATE

1MX8

1M

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

150 ns

3

YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.