TSOP1-R Flash Memory 1,075

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AM29LV640ML112FIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00011 ms		67108864 bit	2.7 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
AM29LV008B-120FEB	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV400T-100FC	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.0001 ms	TOP	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV400T-90RFC	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00009 ms	TOP	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29LV008B-150FC	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV640ML101FIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.0001 ms		67108864 bit	2.7 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
AM29LV640MH90RFIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00009 ms		67108864 bit	3 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3.3	YES
AM29LV008T-120FEB	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV400B-90RFI	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00009 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
AM29LV640ML10RFIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.0001 ms		67108864 bit	3 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3.3	YES
AM29LV400T-120FE	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	125 Cel	YES	3-STATE	256KX16	256K	-55 Cel	1,2,1,7	YES	YES	DUAL	R-XDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00012 ms	TOP	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV008T-100FI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.0001 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV008B-100FE	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.0001 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV400B-120FE	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	125 Cel	YES	3-STATE	256KX16	256K	-55 Cel	1,2,1,7	YES	YES	DUAL	R-XDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00012 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV400B-120FI	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00012 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV400B-120FC	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00012 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV400T-120FC	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00012 ms	TOP	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV008T-150FE	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV008T-120FI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV400T-100FE	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	125 Cel	YES	3-STATE	256KX16	256K	-55 Cel	1,2,1,7	YES	YES	DUAL	R-XDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.0001 ms	TOP	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV008T-100FC	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.0001 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV008T-90RFI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00009 ms	TOP	8388608 bit	3 V			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3.3	YES
AM29LV008B-150FEB	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV640MH12RFIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00012 ms		67108864 bit	3 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	120 ns	3.3	YES
AM29LV640ML11RFIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00011 ms		67108864 bit	3 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3.3	YES
AM29LV400B-100FC	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.0001 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV640MH11RFIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00011 ms		67108864 bit	3 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3.3	YES
AM29LV400B-150FE	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	125 Cel	YES	3-STATE	256KX16	256K	-55 Cel	1,2,1,7	YES	YES	DUAL	R-XDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00015 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV008T-120FE	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV008B-120FI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV640MH101FIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.0001 ms		67108864 bit	2.7 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
AM29LV008B-120FC	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV008B-150FE	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV400T-120FI	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00012 ms	TOP	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV008T-150FC	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV400B-100FE	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	125 Cel	YES	3-STATE	256KX16	256K	-55 Cel	1,2,1,7	YES	YES	DUAL	R-XDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.0001 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV400B-150FI	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	85 Cel	YES	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00015 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV008B-150FI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV008B-90RFI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00009 ms	BOTTOM	8388608 bit	3 V			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3.3	YES
AM29LV008B-120FE	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV008T-120FC	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00012 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
AM29LV640ML90RFIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3.3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00009 ms		67108864 bit	3 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3.3	YES
AM29LV008B-100FEB	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.0001 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV400B-150FC	Infineon Technologies	FLASH	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	10	.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	.00015 ms	BOTTOM	4194304 bit	2.7 V	DATA RETENTION TIME @ 150 DEGREE CENTIGRADE		NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV640MH112FIN	Infineon Technologies	FLASH	56	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	20	.5 mm	85 Cel	YES	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	.00011 ms		67108864 bit	2.7 V		4/8	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
AM29LV008T-150FI	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.00015 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
AM29LV008B-100FC	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	70 Cel	YES	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.0001 ms	BOTTOM	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
AM29LV008T-100FEB	Infineon Technologies	FLASH	40	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20			.5 mm	125 Cel	YES	3-STATE	1MX8	1M	-55 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	.0001 ms	TOP	8388608 bit	2.7 V			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.