TSOP2 Flash Memory 177

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS29LF800B-100BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		100 ns	2.7	YES
TMS28F020-12C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	NO
TMS29LF800T-90BDCDE	Texas Instruments	FLASH	INDUSTRIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		90 ns	2.7	YES
TMS28F020-17C5DDE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		170 ns	12	NO
TMS29LF800T-90CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		90 ns	2.7	YES
TMS28F020-10C4DDE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		100 ns	12	NO
TMS29LF800T-120BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	125 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	2.7	YES
TMS29LF800T-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	2.7	YES
TMS29LF800B-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	2.7	YES
TMS29F040-70C5DDE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		70 ns	5	YES
TMS29F040-90C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		90 ns	5	YES
TMS28F020-15C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO
TMS28F020-15C4DDQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO
TMS28F020-17C5DDQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	125 Cel	3-STATE	256KX8	256K	-40 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		170 ns	12	NO
TMS29LF800T-120BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		120 ns	2.7	YES
TMS28F020-15C5DDE	Texas Instruments	FLASH	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories		.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		YES			TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO
M58LW064A150NC1	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4MX16	4M	0 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064B150NH1	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel		2MX32	2M	0 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		22.22 mm		150 ns	3
M58LW064B150NC6T	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		2MX32	2M	-40 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NC6T	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NH6	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3	NO	1.8/3.6,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	4	e0			NOR TYPE	.000001 Amp	22.22 mm	YES	150 ns	3	NO
M58LW064B150NH6T	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		2MX32	2M	-40 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NC1T	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4MX16	4M	0 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NH1T	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3	NO	1.8/3.6,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		Flash Memories		.5 mm	70 Cel		4MX16	4M	0 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	4	e0			NOR TYPE	.000001 Amp	22.22 mm	YES	150 ns	3	NO
M58LW064B150NC1T	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel		2MX32	2M	0 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064B150NH6	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		2MX32	2M	-40 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NH1	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3	NO	1.8/3.6,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		Flash Memories		.5 mm	70 Cel		4MX16	4M	0 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	4	e0			NOR TYPE	.000001 Amp	22.22 mm	YES	150 ns	3	NO
M58LW064B150NH1T	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel		2MX32	2M	0 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION					NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NC6	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064A150NH6T	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	4194304 words	3	NO	1.8/3.6,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	ALSO SUPPORTS SYNCHRONOUS MODE OF OPERATION	4	e0			NOR TYPE	.000001 Amp	22.22 mm	YES	150 ns	3	NO
M58LW064B150NC6	STMicroelectronics	FLASH	INDUSTRIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		2MX32	2M	-40 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
M58LW064B150NC1	STMicroelectronics	FLASH	COMMERCIAL	86	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			32	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel		2MX32	2M	0 Cel					DUAL	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V						NOR TYPE		22.22 mm		150 ns	3
TC5816AFT	Toshiba	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			2097152 words	5			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		2MX8	2M	0 Cel			TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	4.5 V			e0					18.41 mm		50 ns	5
TC58V16BFT	Toshiba	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	4K	100 mA	2097152 words		NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	3 V		256	e0				.0001 Amp	18.41 mm		45 ns	3	NO
TC5816BFT	Toshiba	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	4K	60 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES		YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	4.5 V		256					.0001 Amp	18.41 mm		45 ns	5	NO
HN29W6411TT-50	Renesas Electronics	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		8MX8	8M	0 Cel			TIN LEAD		DUAL	R-PDSO-G40	3.6 V	1.2 mm		12.7 mm	Not Qualified		67108864 bit	3 V	USER SELECTABLE 5V VCC		e0			AND TYPE		19.68 mm		50 ns	3
HN29W12814ATT-50	Renesas Electronics	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		8MX16	8M	0 Cel			TIN LEAD		DUAL	R-PDSO-G40	3.6 V	1.2 mm		12.7 mm	Not Qualified		134217728 bit	3 V			e0			AND TYPE		19.68 mm			3
HN29W6411ATT-50	Renesas Electronics	FLASH	COMMERCIAL	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			67108864 words	3.3			1	SMALL OUTLINE, THIN PROFILE				10	.8 mm	70 Cel		64MX1	64M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12.7 mm	Not Qualified		67108864 bit	3 V	IT ALSO OPERATES AT 5 V NOMONAL SUPPLY VOLTAGE; 10 YEARS DATA RETENTION					AND TYPE		19.68 mm		50 ns	3
K9F8008W0M-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		1MX8	1M	0 Cel	256	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		8388608 bit	2.7 V		256	e0				.00005 Amp	18.41 mm		45 ns	2.7	NO
K9F6408U0C-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V		512	e0				.00005 Amp	18.41 mm		35 ns	2.7	NO
KM29V16000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	2097152 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	10	.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0				.00005 Amp	18.41 mm		45 ns	3	NO
K9F3208U0B-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		4MX8	4M	0 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10.16 mm	Not Qualified		33554432 bit	2.7 V								18.41 mm		35 ns	2.7
K9F4008W0A-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		512KX8	512K	0 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		4194304 bit	3 V		32	e0				.00005 Amp	18.41 mm		50 ns	3	NO
KM29W32000IT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	85 Cel		4MX8	4M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		33554432 bit	2.7 V		512	e0				.00005 Amp	18.41 mm		35 ns	2.7	NO
K9F8008W0M-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	1048576 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	85 Cel		1MX8	1M	-40 Cel	256	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		8388608 bit	2.7 V		256	e0				.00005 Amp	18.41 mm		45 ns	2.7	NO
KM29W32000TS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		33554432 bit	2.7 V		512	e0				.00005 Amp	18.41 mm		35 ns	2.7	NO
K9F8008W0M-TCB00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		1MX8	1M	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		8388608 bit	2.7 V								18.41 mm		45 ns	2.7
KM29U64000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.8 mm	70 Cel		8MX8	8M	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE							18.41 mm		35 ns	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.