TSOP2 Flash Memory 177

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
K9F6408U0B-TCB00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V						18.41 mm	35 ns	2.7
KM29W16000ATS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0	SLC NAND TYPE	.00005 Amp	18.41 mm	45 ns	2.7	NO
KM29V16000ATS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	2097152 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0	SLC NAND TYPE	.00005 Amp	18.41 mm	45 ns	3	NO
KM29W32000AT	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX8	4M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS ADDITIONAL 1M BIT NAND FLASH					18.41 mm	35 ns	2.7
KM29V64001TS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	30 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		512	e0		.0001 Amp	18.41 mm	35 ns	3	NO
KM29U64000IT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	5			8	SMALL OUTLINE, THIN PROFILE			10	.8 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE					18.41 mm	35 ns	2.7
KM29N16000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0		.0001 Amp	18.41 mm	45 ns	5	NO
KM29W16000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		2MX8	2M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V	CONTAINS ADDITIONAL 512K BIT NAND FLASH	256	e0	SLC NAND TYPE	.00005 Amp	18.41 mm	45 ns	2.7	NO
KM29V64001T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		512	e0		.0001 Amp	18.41 mm	35 ns	3	NO
KM29N16000ATS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	50 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0	SLC NAND TYPE	.0001 Amp	18.41 mm	45 ns	5	NO
KM29N32000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	512	e0		.0001 Amp	18.41 mm	35 ns	5	NO
KM29W16000BTS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words				8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V				SLC NAND TYPE		18.41 mm	45 ns	2.7
K9F3208W0A-TCS0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V		512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29V16000AT	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	2097152 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0	SLC NAND TYPE	.00005 Amp	18.41 mm	45 ns	3	NO
KM29V040T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	10 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		32	e0		.00005 Amp	18.41 mm	50 ns	3	NO
K9F3208W0A-TCS00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX8	4M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS ADDITIONAL 128K X 8 BIT NAND FLASH					18.41 mm	35 ns	2.7
K9F3208U0B-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		4MX8	4M	-40 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V						18.41 mm	35 ns	2.7
K9F6408U0B-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V		512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
K9F6408U0M-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V						18.41 mm	35 ns	2.7
KM29N16000TS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V		256	e0		.0001 Amp	18.41 mm	45 ns	5	NO
KM29V32000TS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	4194304 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V		512	e0		.00005 Amp	18.41 mm	35 ns	3	NO
K9F6408U0B-TIB00	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V						18.41 mm	35 ns	2.7
K9F6408U0A-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS	512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29V32000IT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	4194304 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	512	e0		.00005 Amp	18.41 mm	35 ns	3	NO
KM29W040AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	524288 words	5	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	100K PROGRAM/ERASE CYCLES; BLOCK ERASE	32	e0		.00005 Amp	18.41 mm	50 ns	3	NO
KM29W16000BT	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words		NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		2MX8	2M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	2.7 V		256	e0	SLC NAND TYPE	.00005 Amp	18.41 mm	45 ns	2.7	NO
KM29V32000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	4194304 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	512	e0		.00005 Amp	18.41 mm	35 ns	3	NO
K9F6408U0C-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V		512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29W32000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		4MX8	4M	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS ADDITIONAL 1M BIT NAND FLASH					18.41 mm	35 ns	2.7
K9F6408U0C-TIB00	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G40	1	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V	CONTAINS ADDITIONAL 2M BIT NAND FLASH	512			.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29W040AT	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	524288 words	5	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	100K PROGRAM/ERASE CYCLES; BLOCK ERASE	32	e0		.00005 Amp	18.41 mm	50 ns	3	NO
KM29W32000ATS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS ADDITIONAL 1M BIT NAND FLASH	512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
K9F3208W0A-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		4MX8	4M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS ADDITIONAL 128K X 8 BIT NAND FLASH	512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
K9F6408U0M-TIB00	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		8MX8	8M	-40 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V						18.41 mm	35 ns	2.7
K9F6408U0C-QIB00	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G40	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V	CONTAINS ADDITIONAL 2M BIT NAND FLASH	512	e6		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29W8000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	1048576 words		NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	256	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V		256	e0		.00005 Amp	18.41 mm	45 ns	2.7	NO
KM29N32000IT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	512	e0		.0001 Amp	18.41 mm	35 ns	5	NO
KM29W8000IT00000	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V						18.41 mm	45 ns	2.7
KM29U64000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V	CONTAINS ADDITIONAL 2M BIT NAND FLASH	512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29W32000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	2.7 V		512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29V64000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	30 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	10	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	512	e0		.0001 Amp	18.41 mm	35 ns	3	NO
K9F6408U0B-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V		512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29N040T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	100K PROGRAM/ERASE CYCLES; BLOCK ERASE	32	e0		.00005 Amp	18.41 mm	50 ns	5	NO
KM29W8000T000000	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX8	1M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V						18.41 mm	45 ns	2.7
K9F6408U0M-TCB00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V						18.41 mm	35 ns	2.7
KM29U64000AT	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	2.7 V	CONTAINS ADDITIONAL 2M BIT NAND FLASH	512	e0		.00005 Amp	18.41 mm	35 ns	2.7	NO
KM29V64000TS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	30 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	3 V		512	e0		.0001 Amp	18.41 mm	35 ns	3	NO
K9F4008W0A-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories		.8 mm	85 Cel		512KX8	512K	-40 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		32	e0		.00005 Amp	18.41 mm	50 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.