TSSOP Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

TMS28F800ASYB10BDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

18.4 mm

100 ns

5

TMS28F800ASYB70CDCDE

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

18.4 mm

70 ns

3

TMS28F800ALYB70CDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

18.4 mm

70 ns

3

TMS28F008AVYB80CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

18.4 mm

80 ns

3

TMS28F800AEYT12BDCDE

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

TOP

8388608 bit

4.5 V

TOP BOOT BLOCK

18.4 mm

120 ns

5

TMS29F002B-70CDCDE

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

262144 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSOP40,.79

Flash Memories

.5 mm

85 Cel

256KX8

256K

-40 Cel

1,2,1,3

YES

DUAL

R-PDSO-G40

5.5 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

TMS29LF800T-100EE

Texas Instruments

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

524288 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

TOP

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

100 ns

YES

TMS28F800ASYB70BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

18.4 mm

70 ns

3

TMS28F040-12C3DDE4

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

512KX8

512K

-40 Cel

16

YES

DUAL

R-PDSO-G40

1000 Write/Erase Cycles

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

120 ns

YES

TMS28F800ALB10BDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

BOTTOM

8388608 bit

3 V

BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

100 ns

3

TMS28F800AEYT80CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

18.4 mm

80 ns

3

TMS28F008AEYT70BDCDE

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

18.4 mm

70 ns

3

TMS29LF008B-120BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

120 ns

3

YES

TMS28F008AZYT80CDCDE

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

18.4 mm

80 ns

3

TMS29LF008T-90DCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

1048576 words

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

TOP

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

90 ns

YES

TMS28F040-12C4DUE4

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

YES

512KX8

512K

-40 Cel

16

YES

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

120 ns

YES

TMS28F008AVYT70BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

18.4 mm

70 ns

3

TMS29LF008B-90BDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

125 Cel

1MX8

1M

-40 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

90 ns

3

YES

TMS28F800ASYB10CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

18.4 mm

100 ns

5

TMS28F800ALT10CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

524288 words

3.3

NO

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,7

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

TOP

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

100 ns

NO

TMS29F400B-120CDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

BOTTOM

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

120 ns

YES

TMS29LF800B-90EL

Texas Instruments

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

524288 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

BOTTOM

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

90 ns

YES

TMS29LF800T-120EL

Texas Instruments

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

524288 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

TOP

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

120 ns

YES

TMS28F040-17C4DUE

Texas Instruments

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

YES

512KX8

512K

-40 Cel

16

YES

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

170 ns

YES

TMS28F008AVB12CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

1048576 words

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,7

YES

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

BOTTOM

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

120 ns

NO

TMS29F008B-120CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

1048576 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

BOTTOM

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

120 ns

YES

TMS28F040-17C4DDQ4

Texas Instruments

FLASH

AUTOMOTIVE

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

125 Cel

512KX8

512K

-40 Cel

16

YES

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

170 ns

YES

TMS29LF008B-90DCDLB

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

1048576 words

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

BOTTOM

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

90 ns

YES

TMS28F800AZYT80BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

TOP

8388608 bit

2.7 V

TOP BOOT BLOCK

18.4 mm

80 ns

3

TMS28F800ALYB10CDCDQ

Texas Instruments

FLASH

AUTOMOTIVE

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

125 Cel

1MX8

1M

-40 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

BOTTOM

8388608 bit

4.5 V

BOTTOM BOOT BLOCK

18.4 mm

100 ns

5

TMS29F800T-120BDCDE

Texas Instruments

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

16

Flash Memories

.5 mm

85 Cel

1MX8

1M

-40 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

4.5 V

CAN ALSO BE CONFIGURED AS 512K X 16

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

120 ns

5

YES

TMS28F800AVB10CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

524288 words

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,7

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

BOTTOM

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

100 ns

NO

TMS29LF800T-100ELB

Texas Instruments

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

60 mA

524288 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

TOP

8388608 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

100 ns

YES

LE28FV4001T-20

Onsemi

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

256

25 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.56,20

Flash Memories

10

.5 mm

70 Cel

512KX8

512K

0 Cel

2K

NO

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

Not Qualified

4194304 bit

NOR TYPE

.00002 Amp

200 ns

YES

LE28FV4001T-25

Onsemi

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

256

25 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.56,20

Flash Memories

10

.5 mm

70 Cel

512KX8

512K

0 Cel

2K

NO

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

Not Qualified

4194304 bit

NOR TYPE

.00002 Amp

250 ns

YES

LE28FV4001R-25

Onsemi

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

256

25 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.56,20

Flash Memories

10

.5 mm

70 Cel

YES

512KX8

512K

0 Cel

2K

NO

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

Not Qualified

4194304 bit

NOR TYPE

.00002 Amp

250 ns

YES

LE28FV4001R-20

Onsemi

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

256

25 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.56,20

Flash Memories

10

.5 mm

70 Cel

YES

512KX8

512K

0 Cel

2K

NO

DUAL

R-PDSO-G40

10000 Write/Erase Cycles

Not Qualified

4194304 bit

NOR TYPE

.00002 Amp

200 ns

YES

LE25FW806T

Onsemi

FLASH

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

15 mA

1048576 words

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

Flash Memories

10

.635 mm

70 Cel

1MX8

1M

0 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

10000 Write/Erase Cycles

50 MHz

Not Qualified

SPI

8388608 bit

NOR TYPE

.00001 Amp

M28F410-70N6

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

262144 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G56

Not Qualified

TOP

4194304 bit

e0

NOR TYPE

.0001 Amp

70 ns

NO

M29W010B55N1F

STMicroelectronics

FLASH

COMMERCIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

131072 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

128KX8

128K

0 Cel

8

YES

TIN/TIN BISMUTH

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

2.7 V

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

55 ns

2.7

YES

M28F211-90YN6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

30 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

256KX8

256K

-40 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

100 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.000008 Amp

90 ns

NO

M29W640GB60NB6F

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

60 ns

3

YES

M29W400DT70N1F

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

70 ns

3

YES

M29F010B55N6T

STMicroelectronics

FLASH

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K

20 mA

131072 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

128KX8

128K

-40 Cel

8

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

100000 Write/Erase Cycles

Not Qualified

1048576 bit

e0

NOR TYPE

.0001 Amp

55 ns

YES

M28W800B120N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

4K,32K

20 mA

524288 words

NO

1.65/2.2,3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

8,15

YES

TIN LEAD

DUAL

R-PDSO-G48

Not Qualified

BOTTOM

8388608 bit

e0

NOR TYPE

.000005 Amp

YES

120 ns

NO

M29F010B90N6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

131072 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

128KX8

128K

-40 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M29W800DT45N6T

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

3 V

e0

NOR TYPE

.0001 Amp

18.4 mm

YES

45 ns

3

YES

M28F410-70XN3

STMicroelectronics

FLASH

AUTOMOTIVE

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

262144 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G56

Not Qualified

TOP

4194304 bit

e0

NOR TYPE

.0001 Amp

70 ns

NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.