TSSOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
XCF04SVOG20C	Xilinx	CONFIGURATION MEMORY		20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE	R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles	33 MHz	4.4 mm	Not Qualified		4194304 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	6.5024 mm			3.3
S29AL016J70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29AL016J70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
JS28F128P33TF70A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified	TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e3			NOR TYPE	.002 Amp	18.4 mm	YES	70 ns	3	NO
S29AL008J70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3	YES	3,3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29AL016J70TFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29JL064J70TFI000	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29AL008J70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL128S90TFI020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29GL032N90TFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29JL032J70TFI320	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064S70TFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm			67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29GL512T10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V			e3		260			18.4 mm		100 ns	2.7
S29AL008J70TFI013	Infineon Technologies	FLASH		48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8			.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm		TOP	8388608 bit	2.7 V	DATA RETENTION 20 YEARS TYPICAL AVAILABLE		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
AM29F800BB-55EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		55 ns	5	YES
SST39VF1601-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	MATTE TIN		DUAL	1		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
S29GL512T10TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm			536870912 bit	2.7 V			e3		260			18.4 mm		100 ns	2.7
S29GL128S90TFI023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm		BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29JL032J70TFI420	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29AL016J70TFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29JL032J70TFI310	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
NAND512W3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX8	64M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		536870912 bit	2.7 V			e4	30	260	SLC NAND TYPE		18.4 mm			3
SST39SF040-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.5 V			e3	30	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
S29JL032J70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL01GT10TFI030	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm			1073741824 bit	2.7 V			e3					18.4 mm		100 ns	2.7
S29JL032J70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064S80TFV030	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm			67108864 bit	2.7 V			e3					18.4 mm		80 ns	3
S29AL008J70TFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3	YES	3,3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064N90TFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29JL064J55TFI000	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
AM29F400BT-90EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE		18.4 mm		90 ns	5
S29GL064S70TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm			67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F128J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified		134217728 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
S29GL064N90TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL064S70TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm			67108864 bit	2.7 V			e3		260			18.4 mm		70 ns	3
JS28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified		67108864 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
S29GL064N90TFI030	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	67108864 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
AM29F800BB-70EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		70 ns	5	YES
AT25XE041B-XMHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4MX1	4M	-40 Cel					DUAL			R-PDSO-G8	1	3.6 V	1.2 mm		85 MHz	3 mm			4194304 bit	1.65 V								4.4 mm			1.8
S29GL256S90TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm			268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29GL512S11TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified		536870912 bit	2.7 V		16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	110 ns	2.7	YES
SST39SF010A-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		1048576 bit	4.5 V			e3		260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39SF040-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES	Matte Tin (Sn)		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		4194304 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
S29GL064S70TFI030	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm			67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
AM29F400BT-90ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
M28W160CB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
S29GL064S70TFI070	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm			67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29JL064J70TFI003	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP BOOT BLOCK, BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.