TSSOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29JL032J70TFI013	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT29F16G08ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified			17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
S29AL008J55TFIR20	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29GL512S11TFIV10	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
AM29F400BB-55ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	5.25 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	4194304 bit	4.75 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		55 ns	5	YES
AM29F400BB-90EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		90 ns	5
AM29LV065DU90REF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	8388608 words	3.3	YES	3.3,3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8MX8	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			67108864 bit	3 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
K9F5608U0D-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	25 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	1						Not Qualified			268435456 bit			512	e3				.00005 Amp			30 ns		NO
M58LW064D110N6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			67108864 bit	2.7 V		4/8	e0			NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
MT28EW128ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				134217728 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
S29GL064S70TFI073	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm				67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
AT25DN512C-XMHF-B	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		18 mA	65536 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			20	.65 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	3 mm		SPI		524288 bit	2.3 V			e4			NOR TYPE	.000015 Amp	4.4 mm			3
SST39SF020A-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	64	YES	Matte Tin (Sn)		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			2097152 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
AM29F800BB-90EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	18.4 mm		90 ns	5	YES
H27U518S2CTR-BC	Sk Hynix	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified			536870912 bit			512				SLC NAND TYPE	.00005 Amp			18 ns		NO
M29W800DT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064S70TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm				67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29GL128S90TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
K9F5608U0D-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K	25 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		32MX8	32M	0 Cel	2K	YES	TIN BISMUTH	YES	DUAL			R-PDSO-G48	3						Not Qualified			268435456 bit			512	e6		260		.00005 Amp			30 ns		NO
M29W128GL70N6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V		8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT28EW128ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				134217728 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
S29GL064S80TFV040	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			14 mm				67108864 bit	2.7 V			e3					18.4 mm		80 ns	3
SST49LF008A-33-4C-WHE	Microchip Technology	FLASH	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K	24 mA	1048576 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	1MX8	1M	0 Cel	256	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified		TOP	8388608 bit	3 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		120 ns	3.3	YES
AT25XE021A-XMHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		2MX1	2M	-40 Cel					DUAL			R-PDSO-G8	1	3.6 V	1.2 mm		70 MHz	3 mm				2097152 bit	1.65 V								4.4 mm			1.8
M29DW128G70NF6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	DUAL			R-PDSO-G56							Not Qualified		BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W320DB70N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W320DB70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W400FB55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
S29AL004D70TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm			TOP	4194304 bit	2.7 V	ALSO CONFIGURABLE AS 512K X 8; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		70 ns	3
S29GL032N90TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
TC58NVG2S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm				Not Qualified			4294967296 bit	2.7 V		2K		10	260		.00005 Amp	18.4 mm		25 ns	3.3	NO
TE28F128J3D75B	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL			R-PDSO-G56							Not Qualified			134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
M29W400FB55N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
TE28F128J3D75D	Numonyx	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		75 ns	2.7
TE28F128J3D75E	Numonyx	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		8MX16	8M	-40 Cel					DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		75 ns	2.7
IS29GL128-70SLA3T	Integrated Silicon Solution	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel		128MX1	128M	-40 Cel			TIN		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				134217728 bit	2.7 V			e3					18.4 mm		70 ns	3
JS28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	NICKEL PALLADIUM GOLD	YES	DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			536870912 bit	2.7 V		16/32	e4			NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	3	YES
K8P6415UQB-PI4B	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES	TIN BISMUTH	YES	DUAL			R-PDSO-G48	3						Not Qualified		BOTTOM/TOP	67108864 bit			8	e6		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
MT29F32G08CBABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL			R-PDSO-G48							Not Qualified			34359738368 bit			4K				MLC NAND TYPE	.00005 Amp			20 ns		NO
SST39SF010A-55-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			1048576 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		55 ns	5	YES
SST49LF080A-33-4C-WHE	Microchip Technology	FLASH	OTHER	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	4K	24 mA	1048576 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20			100	.5 mm	85 Cel	3-STATE	1MX8	1M	0 Cel	256	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G32	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified		TOP	8388608 bit	3 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		120 ns	3	YES
AM29F040B-55EF	Spansion	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		DUAL			R-PDSO-G32	3	5.25 V	1.2 mm	1000000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	4.75 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		55 ns	5	YES
AT25DF021A-XMHN-T	Renesas Electronics	FLASH	INDUSTRIAL		TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		2MX1	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G	1	3.6 V	1.2 mm		104 MHz	3 mm				2097152 bit	1.65 V	IT ALSO OPERATES AT 2.3V MIN		e4			NOR TYPE		4.4 mm			1.8
JS28F512P33EFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		31 mA	33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		32MX16	32M	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G56		3.6 V	1.2 mm			14 mm				536870912 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3	30	260	NOR TYPE		18.4 mm		105 ns	3
K9F4G08U0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	1						Not Qualified			4294967296 bit			2K	e3				.00005 Amp			20 ns		NO
SST39SF020A-70-4I-WHE	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	64	YES	Matte Tin (Sn)		DUAL	1		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			2097152 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
AM29F400BB-90EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
AM29F800BB-70EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL			R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.001 Amp	18.4 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.