TSSOP Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29JL032J70TFI023	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
M29W320DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	3 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
SST39SF010A-70-4C-WHE	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	32	YES	Matte Tin (Sn)		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			1048576 bit	4.5 V			e3	40	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
S29AL016J55TFNR10	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
SST39VF1601C-70-4I-EKE	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,31	YES	Matte Tin (Sn) - annealed	YES	DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
M29W800DB45N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	3 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	45 ns	3	YES
S29GL064S70TFI063	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		14 mm				67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29JL032J70TFI313	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29GL064N90TFI060	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V		8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29AL016J55TFIR10	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29GL256N10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified			268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
AM29F400BB-70EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		70 ns	5
AM29F800BB-90EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		90 ns	5	YES
M29W256GL70N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
S29GL032N90TFI033	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
M28W160CT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
SST39SF010A-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	32	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			1048576 bit	4.5 V			e3		260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
SST39VF1601-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	512	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
AM29F400BT-90EC	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles	12 mm	Not Qualified		TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
S29JL032J70TFI323	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
SST39SF040-70-4C-WHE-T	Microchip Technology	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	128	YES			DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	4.5 V						NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
S29GL032N90TFI030	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL256S10TFIV20	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
AM29F400BT-90EI	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel			TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm		12 mm			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE		18.4 mm		90 ns	5
S29GL032N90TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
TE28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified			134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
S29GL512S10TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
AT49BV163D-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.65 V			e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
M29W800DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
AM29F032B-90EF	Spansion	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		4MX8	4M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G40	3	5.5 V	1.2 mm		10 mm	Not Qualified			33554432 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	5	YES
MT29F128G08AJAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified			137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
M29W160ET70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MT28EW512ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V				30	260	NOR TYPE		18.4 mm		95 ns	3
S29AL008J55TFIR10	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	12 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	1000000 Write/Erase Cycles	12 mm	Not Qualified		TOP	8388608 bit	3 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
S29GL256S10TFB020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512T10TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V			e3					18.4 mm		100 ns	2.7
AM29F160DB90EF	Spansion	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm		12 mm	Not Qualified	90 ms	BOTTOM	16777216 bit	4.5 V	MIN 1000K WRITE CYCLE; CAN ALSO BE CONFG AS 2M X 8; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	5	YES
JS28F320J3F75A	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			33554432 bit	2.7 V		4/8	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
M28W320FCT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
S34ML08G201TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1GX8	1G	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified			8589934592 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
SST39SF040-70-4I-WHE-T	Microchip Technology	FLASH	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K	35 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	128	YES	MATTE TIN		DUAL	1	R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	4.5 V			e3	30	260	NOR TYPE	.0001 Amp	12.4 mm		70 ns	5	YES
TE28F128J3D-75	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
S29GL064S70TFI060	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		8MX8	8M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		14 mm				67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
AM29LV002BT-90EC	Spansion	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	20	.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3	3.6 V	1.2 mm		10 mm	Not Qualified		TOP	2097152 bit	2.7 V	MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; TOP BOOT BLOCK		e0		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	YES
S29GL01GS10TFI010	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL512S11TFIV20	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
AM29F800BB-90ED	Spansion	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	5.5 V	1.2 mm	1000000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.001 Amp	18.4 mm		90 ns	5	YES
S29GL128S10TFB023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.