TSSOP Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M29W160FB70N3E

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

10 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

1MX16

1M

-40 Cel

1,2,1,31

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29F400T-55N3RTR

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

YES

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

55 ns

5

YES

M28F210-70YN6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

35 mA

131072 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

100 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.000008 Amp

70 ns

NO

M28F211-80XN1

STMicroelectronics

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

30 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

256KX8

256K

0 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.000005 Amp

80 ns

NO

M28F420-150XN3

STMicroelectronics

FLASH

AUTOMOTIVE

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

262144 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G56

100000 Write/Erase Cycles

Not Qualified

BOTTOM

4194304 bit

e0

NOR TYPE

.000005 Amp

150 ns

NO

M29W640GH60NA6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

128

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

60 ns

3

YES

M29F400BB45N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

45 ns

5

YES

M29W200BT90N6

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

3.3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

2097152 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

20 mm

90 ns

2.7

YES

M28F420-70XN3

STMicroelectronics

FLASH

AUTOMOTIVE

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

60 mA

262144 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G56

100000 Write/Erase Cycles

Not Qualified

BOTTOM

4194304 bit

e0

NOR TYPE

.00008 Amp

70 ns

NO

M28F411-60WN6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

50 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

512KX8

512K

-40 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

TOP

4194304 bit

e0

NOR TYPE

.0001 Amp

60 ns

NO

M29F200BT90N1E

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

128KX16

128K

0 Cel

1,2,1,3

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

2097152 bit

4.5 V

TOP BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

90 ns

5

YES

M29W400DT55N1

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

55 ns

3

YES

M28W160ECB100N1F

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX16

1M

0 Cel

TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

18.4 mm

100 ns

3

M29F102B-35N6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

8K,4K,16K,32K

50 mA

65536 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.56,20

Flash Memories

.5 mm

85 Cel

64KX16

64K

-40 Cel

1,2,1,1

YES

TIN LEAD

DUAL

R-PDSO-G40

Not Qualified

BOTTOM

1048576 bit

e0

NOR TYPE

.0001 Amp

35 ns

YES

M29W010B90N6F

STMicroelectronics

FLASH

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K

20 mA

131072 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

128KX8

128K

-40 Cel

8

YES

TIN/TIN BISMUTH

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

2.7 V

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

90 ns

2.7

YES

M29W800DB45N1F

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

524288 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

512KX16

512K

0 Cel

1,2,1,15

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

3 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

45 ns

3

YES

M29DW641F70N6E

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

16,126

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM/TOP

67108864 bit

2.7 V

100,000 PROGRAM/ERASE CYCLES

8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W800FT9N3F

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

AEC-Q100

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

524288 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

512KX16

512K

-40 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G48

Not Qualified

TOP

8388608 bit

NOR TYPE

.0001 Amp

YES

90 ns

YES

M29W116BT90N6

STMicroelectronics

FLASH

INDUSTRIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

2097152 words

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

2MX8

2M

-40 Cel

1,2,1,31

YES

TIN LEAD

YES

DUAL

R-PDSO-G40

Not Qualified

TOP

16777216 bit

e0

NOR TYPE

.0001 Amp

90 ns

YES

M28W160CT70N6T

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K,32K

20 mA

1048576 words

3

NO

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

.000005 Amp

18.4 mm

YES

70 ns

3

NO

M29F200BB70N1F

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

128KX16

128K

0 Cel

1,2,1,3

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M28W160CT70N1T

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

TOP BOOT BLOCK

e0

NOR TYPE

18.4 mm

70 ns

3

M50LPW040N5T

STMicroelectronics

FLASH

OTHER

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

64K

60 mA

524288 words

3.3

NO

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

85 Cel

512KX8

512K

-20 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

4194304 bit

3 V

e0

NOR TYPE

.0001 Amp

18.4 mm

11 ns

3

NO

M28F211-100XN3

STMicroelectronics

FLASH

AUTOMOTIVE

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

30 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

125 Cel

256KX8

256K

-40 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.00005 Amp

100 ns

NO

M29V040-120N6

STMicroelectronics

FLASH

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

64K

30 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

Flash Memories

.5 mm

85 Cel

512KX8

512K

-40 Cel

8

YES

TIN LEAD

DUAL

R-PDSO-G32

100000 Write/Erase Cycles

Not Qualified

4194304 bit

e0

NOR TYPE

.00005 Amp

120 ns

YES

M28W160ECT90N1E

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX16

1M

0 Cel

TIN/TIN BISMUTH

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

18.4 mm

90 ns

3

M50FLW040BN1P

STMicroelectronics

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4K,64K

60 mA

524288 words

3.3

NO

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

512KX8

512K

0 Cel

48,5

YES

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

Not Qualified

TOP

4194304 bit

3 V

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

11 ns

3

NO

M29W320EB70N1E

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

20 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

2MX16

2M

0 Cel

8,63

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

e3/e6

NOT SPECIFIED

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29F400T-70N1TR

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M29DW641F70N1T

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM/TOP

67108864 bit

2.7 V

100,000 PROGRAM/ERASE CYCLES

e0

NOR TYPE

18.4 mm

70 ns

3

M29F200BB50N3T

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

50 ns

5

YES

M29F400BT70N3T

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

M28F210-80XN3

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

35 mA

131072 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.00005 Amp

80 ns

NO

M28F210-80YN1

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

35 mA

131072 words

5

NO

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

128KX16

128K

0 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G48

100 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.000005 Amp

80 ns

NO

M29F200BB90N3

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

5

YES

M29F400BB55N1E

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,7

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

BOTTOM BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

55 ns

5

YES

M29F200T-90N1RTR

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

YES

3-STATE

128KX16

128K

0 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

2097152 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

90 ns

5

YES

M29W640GH70NA6F

STMicroelectronics

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

128

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

70 ns

3

YES

M29W102BB45XN1T

STMicroelectronics

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

8K,4K,16K,32K

20 mA

65536 words

3.3

YES

3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.56,20

Flash Memories

.5 mm

70 Cel

64KX16

64K

0 Cel

1,2,1,1

YES

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G40

Not Qualified

BOTTOM

1048576 bit

e0

NOR TYPE

.0001 Amp

45 ns

YES

M29F200BB45N3F

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

45 ns

5

YES

M28F211-100N1

STMicroelectronics

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

50 mA

262144 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

256KX8

256K

0 Cel

1,2,1,1

YES

TIN LEAD

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

TOP

2097152 bit

e0

NOR TYPE

.000005 Amp

100 ns

NO

M29W800T-90N1RTR

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,32K,64K

20 mA

524288 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

YES

512KX16

512K

0 Cel

1,2,1,15

YES

Tin/Lead (Sn/Pb)

YES

DUAL

R-PDSO-G48

100000 Write/Erase Cycles

Not Qualified

TOP

8388608 bit

e0

NOR TYPE

.0001 Amp

90 ns

YES

M29F400BT45N3E

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

45 ns

5

YES

M28F411-70WN1

STMicroelectronics

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

50 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

512KX8

512K

0 Cel

1,2,1,3

YES

TIN LEAD

DUAL

R-PDSO-G40

100000 Write/Erase Cycles

Not Qualified

TOP

4194304 bit

e0

NOR TYPE

.0001 Amp

70 ns

NO

M29W640GT60NB6F

STMicroelectronics

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

10 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

MATTE TIN/TIN BISMUTH

YES

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

TOP

67108864 bit

2.7 V

4/8

e3/e6

40

260

NOR TYPE

.0001 Amp

18.4 mm

YES

60 ns

3

YES

M29F400T-120N1TR

STMicroelectronics

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

120 ns

5

YES

M29F400BT45N3T

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

262144 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

256KX16

256K

-40 Cel

1,2,1,7

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

TOP BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

45 ns

5

YES

M29F200BB70N3T

STMicroelectronics

FLASH

AUTOMOTIVE

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

20 mA

131072 words

5

YES

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

Flash Memories

.5 mm

125 Cel

128KX16

128K

-40 Cel

1,2,1,3

YES

TIN LEAD

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

e0

NOR TYPE

.0001 Amp

18.4 mm

70 ns

5

YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.