VBGA Flash Memory 1,037

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S26KL512SDABHB023	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm			536870912 bit	2.7 V								8 mm	96 ns	3
S26KS512SDPBHM020	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
MT29F16G08ABCCBH1-10ITZ:C	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories		1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm	Not Qualified		17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm	20 ns	2.7	NO
S25HL01GTDPBHV033	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		69 mA	134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm		SPI	1073741824 bit	2.7 V						NOR TYPE	.00056 Amp	8 mm		3
MT29F16G08ABCCBH1-AAT:C	Micron Technology	FLASH		100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		10	1 mm	105 Cel	3-STATE	2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm	80000 Write/Erase Cycles		12 mm			17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm	20 ns	3.3	NO
ATXP032-CCUE-T	Dialog Semiconductor	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		37 mA	4194304 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel			MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24		1.95 V	1 mm	100000 Write/Erase Cycles	150 MHz	6 mm		SPI	33554432 bit	1.7 V			e3			NOR TYPE	.000001 Amp	8 mm
S26KS512SDPBHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S28HS512TGABHM010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		173 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V						NOR TYPE	.00034 Amp	8 mm		1.8
IS26KL256S-DABLI00	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1 mm			6 mm			268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm	96 ns	3
MTFC8GAMALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	105 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			68719476736 bit	2.7 V						NAND TYPE		18 mm
MT29F128G08CECABH1-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm			137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MTFC8GAMALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			68719476736 bit	2.7 V						NAND TYPE		18 mm
S26KS512SDABHB030	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
MT29F16G08ABCCBH1-10IT:C	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40	Flash Memories		1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm	Not Qualified		17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm	20 ns	2.7	NO
MTFC64GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			549755813888 bit	2.7 V						NAND TYPE		18 mm
MTFC32GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			274877906944 bit	2.7 V						NAND TYPE		18 mm
MTFC32GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			274877906944 bit	2.7 V						NAND TYPE		18 mm
S26KL256SDABHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm			268435456 bit	2.7 V								8 mm	96 ns	3
MT29F16G08ABCBBH1-12AIT:B	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	YES		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		10	1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm	100000 Write/Erase Cycles		12 mm			17179869184 bit	2.7 V	83MHZ CLOCK FREQUENCY IS AVAILABLE	4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm		3.3	NO
MT29F32G08AECBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		4GX8	4G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm			34359738368 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm		2.7
MTFC16GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		5	1 mm	105 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm			137438953472 bit	2.7 V						NAND TYPE		18 mm
S28HS512TGABHI010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		173 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V						NOR TYPE	.000113 Amp	8 mm		1.8
S26KS512SDPBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm			536870912 bit	1.7 V								8 mm	96 ns	1.8
S26KL128SDABHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm			134217728 bit	2.7 V								8 mm	96 ns	3
S26KL512SDABHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm			536870912 bit	2.7 V			e1					8 mm	96 ns	3
NAND08GR3B4CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1048576 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		1MX8	1M	0 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND04GR3B2DZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		512KX8	512K	0 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND04GR3B2DZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		512KX8	512K	0 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND08GW3B4CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1048576 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	85 Cel		1MX8	1M	-40 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND04GR4B2DZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		512KX8	512K	-40 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V			e3/e4	40	260			17 mm	30 ns	1.8
NAND04GR3B2DZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	85 Cel		512KX8	512K	-40 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND08GW3C4AZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GW3C2AZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		1GX8	1G	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GR4B2CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V			e3/e4	40	260			17 mm	30 ns	1.8
NAND08GW3B2CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V			e3/e4	40	260			17 mm	20 ns	3
NAND08GW4B2CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V			e3/e4	40	260			17 mm	20 ns	3
NAND08GW3C2AZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		1GX8	1G	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND04GR4B2DZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		512KX8	512K	0 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V			e3/e4	40	260			17 mm	30 ns	1.8
NAND04GW3B2DZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	524288 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	85 Cel		512KX8	512K	-40 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GR3B2CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V			e3/e4	40	260			17 mm	30 ns	1.8
NAND08GW3B4CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1048576 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		1MX8	1M	0 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GW3B4CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1048576 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)	Flash Memories		1 mm	70 Cel		1MX8	1M	0 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GW3B2CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V			e3/e4	40	260			17 mm	20 ns	3
NAND08GW4B2CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V			e3/e4	40	260			17 mm	20 ns	3
NAND08GR4B2CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V			e3/e4	40	260			17 mm	30 ns	1.8
NAND08GW3C2AZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GR4B2CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE				1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V			e3/e4	40	260			17 mm	30 ns	1.8
NAND04GW4B2DZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			8	GRID ARRAY, VERY THIN PROFILE				1 mm	70 Cel		512KX8	512K	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V			e3/e4	40	260			17 mm	20 ns	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.