VBGA Flash Memory 1,037

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
NAND08GW3C4AZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		1GX8	1G	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GR3B4CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1048576 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	85 Cel		1MX8	1M	-40 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND08GW3C4AZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		1GX8	1G	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GW3B4CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1048576 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	85 Cel		1MX8	1M	-40 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GR3B4CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1048576 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	70 Cel		1MX8	1M	0 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND08GW3C4AZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND08GW3B2CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND08GW3C2AZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8589934592 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		16.9 mm	60000 ns	3
NAND04GR3B2DZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	524288 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	85 Cel		512KX8	512K	-40 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND04GR4B2DZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		512KX8	512K	-40 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND08GR3B2CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND08GW3B2CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND08GW4B2CZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND04GW3B2DZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	524288 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	70 Cel		512KX8	512K	0 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GR3B4CZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	1048576 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	85 Cel		1MX8	1M	-40 Cel	8K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	30 ns	1.8	NO
NAND04GR4B2DZL1E	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		512KX8	512K	0 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		4194304 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND04GW4B2DZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		512KX8	512K	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND08GR4B2CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND08GW4B2CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		8388608 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND04GW4B2DZL6E	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		512KX8	512K	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
NAND04GW3B2DZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	524288 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	70 Cel		512KX8	512K	0 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND08GR3B2CZL1F	STMicroelectronics	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		1MX8	1M	0 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND08GR3B2CZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		1MX8	1M	-40 Cel					BOTTOM		R-PBGA-B52		1.95 V	.65 mm			12 mm	Not Qualified		8388608 bit	1.7 V		e3/e4	40	260			17 mm	30 ns	1.8
NAND04GW3B2DZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	524288 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories		1 mm	85 Cel		512KX8	512K	-40 Cel	4K	YES	TIN/NICKEL PALLADIUM GOLD	YES	BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V	2K	e3/e4	40	260		.00005 Amp	17 mm	20 ns	3	NO
NAND04GW4B2DZL6F	STMicroelectronics	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		512KX8	512K	-40 Cel					BOTTOM		R-PBGA-B52		3.6 V	.65 mm			12 mm	Not Qualified		4194304 bit	2.7 V		e3/e4	40	260			17 mm	20 ns	3
S26HL01GTFPBHM030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		3
S26HS01GTFPBHV023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		1.8
S28HL512TFPBHM013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24	3	3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE	.00034 Amp	8 mm		3
S26HS512TGABHM000	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		1.8
S28HL512TGABHA013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1		25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE		8 mm		3
S26HL512TFPBHM013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		3
S28HL01GTFPBHV030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE	.00032 Amp	8 mm		3
S28HL512TGABHM013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1		25	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE		8 mm		3
S28HL512TGABHM010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1		25	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE		8 mm		3
S26HL512TFPBHI000	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		3
S26HL512TFPBHV013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		3
S26HL01GTGABHI023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE		8 mm		3
S26HS01GTGABHI000	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm		SPI	1073741824 bit	1.7 V					NOR TYPE		8 mm		1.8
S26HL256TGABHA010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	2.7 V					NOR TYPE		8 mm		3
S28HS512TGABHV010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		173 mA	67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V					NOR TYPE	.000188 Amp	8 mm		1.8
S26HL256TGABHB033	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	2.7 V					NOR TYPE		8 mm		3
S26HS256TGABHV023	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm		SPI	268435456 bit	1.7 V					NOR TYPE		8 mm		1.8
S26HS512TFPBHB010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm		SPI	536870912 bit	1.7 V					NOR TYPE		8 mm		1.8
S26HL01GTGABHI003	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE		8 mm		3
S26HL512TGABHI030	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	2.7 V					NOR TYPE		8 mm		3
S26HL01GTFPBHA000	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE		8 mm		3
S26HL01GTGABHV013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE		8 mm		3
S26HL01GTGABHB003	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm		SPI	1073741824 bit	2.7 V					NOR TYPE		8 mm		3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.