VBGA Flash Memory 1,037

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S26HS01GTGABHI003	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	1.7 V			NOR TYPE		8 mm	1.8
S28HL512TGABHI010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE		8 mm	3
S28HS512TFPBHB013	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL01GTFPBHI033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	3
S26HS01GTGABHV013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS01GTFPBHV030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	1.8
S26HL256TFPBHM010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HL512TFPBHV020	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE		8 mm	3
S26HS01GTFPBHV000	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL01GTFPBHI013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HL01GTGABHA020	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HS01GTFPBHA033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL01GTGABHV030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HL256TGABHM010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S28HL512TFPBHA010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE	.000126 Amp	8 mm	3
S26HL512TFPBHB013	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm	3
S28HL256TFPBHB010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S28HL512TFPBHI013	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	100 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24	3	3.6 V	1 mm	300000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE	.000126 Amp	8 mm	3
S26HS512TFPBHB000	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S28HL01GTGABHA030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HS256TFPBHM023	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS512TFPBHI000	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S28HS256TGABHA010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS256TFPBHI030	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL01GTFPBHB013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HL256TFPBHA033	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HL01GTGABHV033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HL256TFPBHA030	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HS01GTGABHV003	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL512TFPBHV030	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE		8 mm	3
S26HS512TGABHI020	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS01GTGABHM000	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm	SPI	1073741824 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS256TFPBHA023	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V			NOR TYPE		8 mm	1.8
S28HL256TGABHM010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HS512TGABHM030	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL256TGABHB020	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HL01GTFPBHI010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HL01GTFPBHB000	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel	BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V			NOR TYPE		8 mm	3
S26HS256TGABHB013	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS512TFPBHB023	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HS512TFPBHB003	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8
S26HL512TFPBHM030	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE		8 mm	3
S26HL256TGABHB030	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HL256TFPBHM020	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HL256TGABHI023	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm	SPI	268435456 bit	2.7 V			NOR TYPE		8 mm	3
S26HL512TGABHV033	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm	SPI	536870912 bit	2.7 V			NOR TYPE		8 mm	3
S26HS256TFPBHV003	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		33554432 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm	SPI	268435456 bit	1.7 V			NOR TYPE		8 mm	1.8
S28HS512TFPBHB010	Infineon Technologies	FLASH	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1	25	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm	SPI	536870912 bit	1.7 V			NOR TYPE		8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.