VSOP Flash Memory 15

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
W25Q20EWSVIG	Winbond Electronics	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	20 mA	2097152 words	1.8	1.8	1	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25	Flash Memories	20	1.27 mm	85 Cel	2MX1	2M	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		1.95 V	.9 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000075 Amp	4.9 mm	1.8
LE25S20FD-AH	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	1.8	1.8	8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25	Flash Memories	20	1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	.85 mm	100000 Write/Erase Cycles	40 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	1.65 V	e3	30	260	NOR TYPE	.00001 Amp	4.9 mm	1.8
LE25U20AFD-AH	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	262144 words	2.5	2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25	Flash Memories	20	1.27 mm	85 Cel	256KX8	256K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	3.6 V	.85 mm	100000 Write/Erase Cycles	30 MHz	3.9 mm	Not Qualified	SPI	2097152 bit	2.3 V	e3	30	260	NOR TYPE	.00001 Amp	4.9 mm	3
LE25S81FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel	1MX8	1M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm			8388608 bit	1.65 V	e3	30	260	NOR TYPE		4.9 mm	1.8
LE25FW808TT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	70 Cel	1MX8	1M	0 Cel		DUAL		R-PDSO-G8		3.6 V	.85 mm		50 MHz	4.4 mm	Not Qualified		8388608 bit	2.7 V				NOR TYPE		5.2 mm	3
LE25S40AFDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		524288 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel	512KX8	512K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm			4194304 bit	1.65 V	e3	30	260	NOR TYPE		4.9 mm	1.8
LE25S80FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel	1MX8	1M	-40 Cel	Tin (Sn)	DUAL		R-PDSO-G8	3	1.95 V	.85 mm		40 MHz	3.9 mm			8388608 bit	1.65 V	e3			NOR TYPE		4.9 mm	1.8
LE25FU206TT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	70 Cel	256KX8	256K	0 Cel		DUAL		R-PDSO-G8		3.6 V	.85 mm		30 MHz	4.4 mm			2097152 bit	2.3 V				NOR TYPE		5.2 mm	2.7
LE25S161FDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	8 mA	2097152 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		20	1.27 mm	90 Cel	2MX8	2M	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3	1.95 V	.85 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm		SPI	16777216 bit	1.65 V	e4	30	260	NOR TYPE	.00005 Amp	4.9 mm	1.8
LE25S81AFDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	90 Cel	1MX8	1M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	1.95 V	.85 mm		70 MHz	3.9 mm			8388608 bit	1.65 V	e3	30	260			4.9 mm	1.8
LE25FW418ATT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	20 mA	524288 words	3		8	SMALL OUTLINE, VERY THIN PROFILE	TSOP8,.25		20	1.27 mm	70 Cel	512KX8	512K	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	.85 mm	100000 Write/Erase Cycles	50 MHz	4.4 mm		SPI	4194304 bit	2.7 V				NOR TYPE	.00005 Amp	5.2 mm	3
LE25U81AFDTWG	Onsemi	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	85 Cel	1MX8	1M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	3	2.7 V	.85 mm		40 MHz	3.9 mm			8388608 bit	2.3 V	e3	30	260	NOR TYPE		4.9 mm	2.7
LE25FU106BTT	Onsemi	FLASH	COMMERCIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE				1.27 mm	70 Cel	128KX8	128K	0 Cel		DUAL		R-PDSO-G8		3.6 V	.85 mm		30 MHz	4.4 mm			1048576 bit	2.3 V				NOR TYPE		5.2 mm	2.7
M25P40-VMS6TGB	Micron Technology	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	SPI	4194304 bit	2.3 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7
M25P40-VMS6GB	Micron Technology	FLASH	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	524288 words	2.7	2.5/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25	Flash Memories	20	1.27 mm	85 Cel	512KX8	512K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	SPI	4194304 bit	2.3 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.