RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39VF1601-70-4C-EKE	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	Matte Tin (Sn) - annealed		DUAL	1		R-PDSO-G48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
MTFC8GAKAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
S25FL128SAGBHIA00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1	30	260	NOR TYPE	.0001 Amp	8 mm			3
W25N01GVZEIGTR	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1073741824 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL			R-PDSO-N8		3.6 V	.8 mm		104 MHz	6 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		8 mm			3
SST25VF040B-50-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words				1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm			SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00003 Amp	4.9 mm
MTFC4GACAJCN-4MITTR	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		4GX8	4G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B153		3.6 V	1 mm		52 MHz	11.5 mm					34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		13 mm				NO
SST26VF032BT-104I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm	Not Qualified		SPI		33554432 bit	2.7 V			e3			NOR TYPE	.000045 Amp	5.26 mm			3
MT25QL128ABA1EW9-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	134217728 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2			20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm					134217728 bit	2.7 V				30	260		.00005 Amp	8 mm			3
S25FL128SAGNFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3			NOR TYPE	.0001 Amp	8 mm			3
W25Q128JVPIQTR	Winbond Electronics	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2	1		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	3 V	ALSO OPERATES AT 2.7 TO 3V @104MHZ					NOR TYPE	.00006 Amp	6 mm			3.3
MTFC16GAPALBH-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel	3-STATE	16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm					137438953472 bit	2.7 V			e1	30	260	NAND TYPE		13 mm			2.7
EPCQ16ASI8N	Intel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	16777216 words	3.3			1	SMALL OUTLINE				20	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			Tin (Sn)		DUAL			R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	100 MHz	3.9 mm					16777216 bit	2.7 V			e3	NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	4.9 mm			3.3
AT45DB161D-SU-2.5	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	2.7		2.7/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.24 mm	Not Qualified		SPI		16777216 bit	2.5 V	ORGANIZED AS 4096 PAGES OF 528 BYTES EACH		e3		260	NOR TYPE	.000025 Amp	5.29 mm			2.7
IS21ES04G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4GX8	4G	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm			11.5 mm					34359738368 bit	2.7 V			e1	10	260			13 mm			3.3
MT25QU01GBBB8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL			R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			1.8
MT25QL256ABA8ESF-0SIT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL			R-PDSO-G16		3.6 V	2.3 mm		133 MHz	7.5 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			10.3 mm			3
W25X40CLSNIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	IT ALSO OPERATES AT 2.3 V AT 80 MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	4.9 mm			2.7
W25Q128JVEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	8 mm			3.3
S29GL128S90TFI020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm				BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
W25Q80DVSNIG	Winbond Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.7 V			e3			NOR TYPE	.00006 Amp	4.85 mm			3
IS21ES08G-JCLI	Integrated Silicon Solution	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20	1			.5 mm	85 Cel	3-STATE	8GX8	8G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM			R-PBGA-B153	3	3.6 V	1 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V			e1	10	260	MLC NAND TYPE		13 mm			3.3	NO
AT45DB081E-SHN-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4		260	NOR TYPE	.00004 Amp	5.29 mm			3
W25N01GVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	10	1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
W25Q128JVPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	6 mm			3.3
AT25SF161-SSHD-T	Dialog Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		16777216 bit	2.7 V			e4		260	NOR TYPE	.000025 Amp	4.925 mm			3
S29GL032N90TFI040	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
SDINBDG4-8G	Western Digital	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM			R-PBGA-B153		3.6 V	.8 mm	3000 Write/Erase Cycles		11 mm					68719476736 bit	2.7 V						MLC NAND TYPE		13.5 mm
AT25SF041-SSHD-T	Renesas Electronics	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm		104 MHz	3.9 mm			SPI		4194304 bit	2.5 V						NOR TYPE	.000025 Amp	4.925 mm			3
S25FL512SAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
AT45DB081E-SSHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4		260	NOR TYPE	.00004 Amp	4.925 mm			3
AT45DB321D-SU-SL383	Dialog Semiconductor	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3			1	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm			SPI		33554432 bit	2.7 V						NOR TYPE	.00005 Amp	5.29 mm			2.7
AT25DF081A-SSH-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	85 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.7 V			e4		260	NOR TYPE	.00001 Amp	4.925 mm
MT25QL256ABA1EW9-0SIT	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		256MX1	256M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	6 mm					268435456 bit	2.7 V			e4	30	260			8 mm			3
MX25R6435FZNIL0	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			R-PDSO-N8	3	3.6 V	.8 mm		33 MHz	5 mm					67108864 bit	1.65 V	ALSO IT CAN BE CONFIGURED AS 64M X 1 BIT		e3					6 mm			3
AM29F040B-90JF	Spansion	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.556 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	4.5 V			e3	40	260	NOR TYPE	.000005 Amp	13.97 mm		90 ns	5	YES
SST26VF064B-104I/MF	Microchip Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	85 Cel	3-STATE	64MX1	64M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		67108864 bit	2.7 V			e3			NOR TYPE	.000045 Amp	6 mm			3
W25Q256JVEIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	3 V	ALSO OPERATES AT 104MHZ AT 2.7-3.0V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3.3
W25Q128JVFIQ	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	133 MHz	7.49 mm			SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	10.31 mm			3.3
AT45DB321D-SU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 512 BYTES EACH		e3		260	NOR TYPE	.00001 Amp	5.29 mm			2.7
SST25VF040B-50-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words				1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm			SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00003 Amp	4.9 mm
MT25QL256ABA8E12-1SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX8	32M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					268435456 bit	2.7 V			e1	30	260			8 mm			3
S25FL256SAGMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3		260	NOR TYPE	.0001 Amp	10.3 mm			3
SDINBDG4-8G-XI2	Western Digital	FLASH CARD	INDUSTRIAL		VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		8GX8	8G	-40 Cel					BOTTOM					3.6 V	.8 mm	3000 Write/Erase Cycles		11.5 mm					68719476736 bit	2.7 V						MLC NAND TYPE		13 mm
AT45DB081E-SHN-B	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	1048576 words	3		1.8/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.24 mm	Not Qualified		SPI		8388608 bit	2.3 V	IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE		e4			NOR TYPE	.00004 Amp	5.29 mm			3
S25FL128SAGBHI200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI		134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
W25Q32JVZPIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel			PURE TIN		DUAL			R-PDSO-N8		3.6 V	.8 mm		133 MHz	5 mm					33554432 bit	3 V	2.7V NOMINAL AVAILABLE WITH 104MHZ				260			6 mm			3
AT45DB641E-SHN2B-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	2.3			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	3.6 V	2.16 mm		85 MHz	5.24 mm					67108864 bit	1.7 V			e4			NOR TYPE		5.29 mm			1.8
AT25SF081-SSHD-T	Dialog Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16 mA	8388608 words	3			1	SMALL OUTLINE	SOP8,.25			20	1.27 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		8388608 bit	2.5 V	ALSO OPERATES WITH 2.3VMIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000025 Amp	4.925 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.