RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
IS25LP512M-RMLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.49 mm					536870912 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			10.31 mm			3
IS25LQ025B-JNLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel			TIN		DUAL		R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					262144 bit	2.3 V			e3	30	260			4.9 mm			3
IS25LQ025B-JNLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			262144 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		256KX1	256K	-40 Cel			TIN		DUAL		R-PDSO-G8		3.6 V	1.75 mm		104 MHz	3.9 mm					262144 bit	2.3 V			e3	30	260			4.9 mm			3
IS25LQ512B-JULE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			524288 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	105 Cel		512KX1	512K	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.6 mm		104 MHz	2 mm					524288 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			3 mm			3
IS25WP016D-JTLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,32	1		20	.8 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel			Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		1.95 V	.6 mm	100000 Write/Erase Cycles	133 MHz	3 mm			SPI		16777216 bit	1.65 V			e3			NOR TYPE	.00002 Amp	4 mm			1.8
IS25WP128F-JKLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel					DUAL		R-PDSO-N8		1.95 V	.8 mm		166 MHz	5 mm					134217728 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			1.8
IS25WP512M-RHLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.65 V			e1	10	260	NOR TYPE	.00026 Amp	8 mm			1.8
IS25WX256-JHLE	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		70 mA	33554432 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			100	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	8 mm			9
IS29GL128-70SLA3L	Integrated Silicon Solution	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel		128MX1	128M	-40 Cel			TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					134217728 bit	2.7 V			e3					18.4 mm		70 ns	3
IS29GL256-70SLET	Integrated Silicon Solution	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		256MX1	256M	-40 Cel			TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
K9F1208U0C-PCB0T	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				536870912 bit	2.7 V	CONTAINS ADDITIONAL 16M BIT SPARE MEMORY	512	e6		260	SLC NAND TYPE	.00005 Amp	20 mm		30 ns	3.3	NO
M25PE40-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M25PE40VMP6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M28F512-12B1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		YES	MATTE TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES		e3			NOR TYPE	.0001 Amp	41.91 mm		12 ns	12	NO
M29F040B70N6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				4194304 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F200BB45N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M29F800FT55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W800DB90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29W800DT45N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	3 V			e3/e6	NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm	YES	45 ns	3	YES
M29W800DT70M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G44		3.6 V	2.8 mm			13.3 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	70 ns	3	YES
M29W800DT90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M45PE40VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M45PE40-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	6 mm			2.7
M58LW064D110N6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
M58LW064D110N6F	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	64	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	260	NOR TYPE	.00004 Amp	18.4 mm	YES	110 ns	3	NO
M58LW064D110N6P	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	3
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QU02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1			NOR TYPE		8 mm			1.8
MT25QU512ABA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		133 MHz	6 mm					536870912 bit	1.7 V						NOR TYPE		8 mm			3
MT28EW01GABA1LPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					1073741824 bit	2.7 V				30	260			13 mm		95 ns	3
MT28EW128ABA1LPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					134217728 bit	2.7 V			e1	30	260	NOR TYPE		13 mm		70 ns	3
MT28EW256ABA1HJS-0SITTR	Micron Technology	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	16777216 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8		20	.5 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		NO		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm					268435456 bit	2.7 V		16				NOR TYPE	.000135 Amp	18.4 mm	YES	70 ns	3	YES
MT29F128G08CFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPIT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F16G08ABCCBH1-10:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F16G08ABCCBH1-10IT:C	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm		20 ns	2.7	NO
MT29F16G08ADBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MT29F1T08CUCCBH8-6R:C	Micron Technology	FLASH	COMMERCIAL	152	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	70 Cel		128GX8	128G	0 Cel					BOTTOM		R-PBGA-B152		3.6 V	1.4 mm			14 mm					1099511627776 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F32G08ABAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48							Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	8589934592 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				68719476736 bit	2.7 V		8K	e3			MLC NAND TYPE	.00001 Amp	18.4 mm		20 ns	3.3	NO
MT29F64G08AFAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G16ABACAWP-IT:C	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX16	512M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48							Not Qualified				8589934592 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns	3.3	NO
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XU02GCBA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.