RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFC128GAPALNS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.2 mm			11.5 mm					1099511627776 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm					137438953472 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm					137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
MTFC64GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm					549755813888 bit	2.7 V						NAND TYPE		18 mm
MTFC64GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm				NO
MTFDHBM1T0TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words				8							105 Cel		1TX8	1T	-40 Cel					BOTTOM		R-XBGA-B											8796093022208 bit							TLC NAND TYPE
MTFDKCC960TFR-1BC1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					UNSPECIFIED		R-XXMA-X											8246337208320 bit							TLC NAND TYPE
MX25L12845GXDI-08G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L12845GZ2I-08G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	85 Cel		32MX4	32M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		120 MHz	6 mm					134217728 bit	2.7 V	CAN BE ORGANISED AS 128 M X 1			NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MX25L2006EM1I-12G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	2	SMALL OUTLINE	SOP8,.25	1	Flash Memories	20	1.27 mm	85 Cel		1MX2	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	86 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	4.9 mm			2.7
MX25L25735FZ2I-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3	2	Flash Memories	20	1.27 mm	85 Cel		64MX4	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V	CAN BE ORGNISED AS 256 MBIT X 1			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			3
MX25L32356M1I03	Macronix	FLASH		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25	4		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	133 MHz	3.9 mm			SPI		33554432 bit	2.65 V	16MX2BIT MEMORYCONFIGURATION IS ALSO AVAILABLE					NOR TYPE	.00002 Amp	4.9 mm			3
MX25L3235EZNI-10G	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		35 mA	8388608 words	3.3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V	IT ALSO CONFIGURED AS 32M X 1		e3			NOR TYPE	.00004 Amp	6 mm			2.7
MX25L6433FM2J-08G	Macronix	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.23 mm			SPI		67108864 bit	2.65 V	32MX2BIT			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.28 mm			3
MX25L6435EXCI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words	3.3		3/3.3	4	GRID ARRAY, THIN PROFILE		2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	IT ALSO CONFIGURED AS 64M X 1			40	260	NOR TYPE		8 mm			2.7
MX25LM51245GMI00	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE		1			1.27 mm	85 Cel		64MX8	64M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	2.7 V								10.3 mm			3
MX25U12832FMI02	Macronix	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.52 mm			SPI		134217728 bit	1.65 V						NOR TYPE	.000005 Amp	10.3 mm			1.8
MX25U12832FZ4I02	Macronix	FLASH		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		2 V	.8 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.65 V						NOR TYPE	.000005 Amp	8 mm			1.8
MX25U51245GMI	Macronix	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			4	SMALL OUTLINE		2			1.27 mm	85 Cel		128MX4	128M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G16	3	2 V	2.65 mm		133 MHz	7.52 mm					536870912 bit	1.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		e3			NOR TYPE		10.3 mm			1.8
MX25U51245GXDI0A	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		40 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			1.8
MX25U51245GXDI54	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	67108864 words	1.8			8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm			SPI		536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1					NOR TYPE	.00018 Amp	8 mm			1.8
MX29LV320ETTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.000015 Amp	18.4 mm	YES	70 ns	3	YES
MZ-V7S2T0BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD					2000000000000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		2TX8	2T	0 Cel					SINGLE		R-XSMA-N											16000000000000 bit							MLC NAND TYPE
N25Q032A13EF640E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			2.7
N25Q128A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
NAND512W3A0AN6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				536870912 bit	2.7 V		512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	3	NO
NAND512W3A0AN6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				536870912 bit	2.7 V		512	e3/e6	NOT SPECIFIED	260	SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	3	NO
NAND512W3A0AV6E	STMicroelectronics	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48		3.6 V	.65 mm			12 mm	Not Qualified				536870912 bit	2.7 V		512		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	15.4 mm		35 ns	3	NO
NAND512W3A2SN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				512753664 bit	2.7 V		512	e4	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	3	NO
PC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
PC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	1.7 V			e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
PC48F4400P0TB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1	30	260			13 mm		95 ns	3
PF48F4400P0VBQEA	Micron Technology	FLASH	INDUSTRIAL	88	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32	16	Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		R-PBGA-B88		2 V	1 mm			8 mm	Not Qualified			BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE			30	260	NOR TYPE	.00042 Amp	11 mm	YES	100 ns	1.8	NO
S25FL128LAGMFI001	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL128SAGBHI213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0001 Amp	8 mm			3
S25FL128SAGBHIA03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		32MX4	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1	30	260	NOR TYPE	.0001 Amp	8 mm			3
S25FL128SAGBHIZ00	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		500 ms	SPI		134217728 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm			3
S25FL129P0XBHI210	Cypress Semiconductor	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.3 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V						NOR TYPE	.00001 Amp	8 mm			3
S25FL129P0XMFI000	Infineon Technologies	FLASH		16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm		50 ms	SPI		134217728 bit	2.7 V						NOR TYPE	.00001 Amp	10.3 mm			3
S25FL129P0XNFI000	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI		134217728 bit	2.7 V						NOR TYPE	.00001 Amp	8 mm			3
S25FL129P0XNFI001	Infineon Technologies	FLASH		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		38 mA	16777216 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm		50 ms	SPI		134217728 bit	2.7 V						NOR TYPE	.00001 Amp	8 mm			3
S25FL208K0RMFI041	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	76 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	4.9 mm			3
S25FL256LAGMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL256SAGMFVR03	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI		268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3			NOR TYPE	.0003 Amp	10.3 mm			3
S25FL512SDSBHI213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V	ITS ALSO CONFIGURABLE AS 512MX1		e1			NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDSBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.