RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MX25U8035FZUI	Macronix	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			1048576 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		4			.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL			R-PDSO-N8		2 V	.6 mm		108 MHz	2 mm					8388608 bit	1.65 V	IT CAN ALSO BE CONFIGURED AS 4M X 2 AND 8M X 1			NOT SPECIFIED	NOT SPECIFIED			3 mm			1.8
MX29LV400CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	1,2,1,7	YES	Tin (Sn)	YES	DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MX30LF1G28AD-TI	Macronix	FLASH		48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	50 mA	134217728 words	3	NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20			10	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	NO		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	60000 Write/Erase Cycles		12 mm		.00002 ms			1073741824 bit	2.7 V		2K				SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
N25Q256A11EF840E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		2 V	1 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm			1.8
NAND512W3A2DZA6E	STMicroelectronics	FLASH	INDUSTRIAL	63	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	GRID ARRAY						85 Cel		64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B63		3.6 V					Not Qualified				536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE				12000 ns	3
S25FL128LAGBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
S25FL512SAGMFA010	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S26KS128SDPBHI020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY						85 Cel		16MX8	16M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V									134217728 bit	1.7 V										96 ns	1.8
S26KS512SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY						105 Cel		64MX8	64M	-40 Cel					BOTTOM			R-PBGA-B24	3	1.95 V									536870912 bit	1.7 V										96 ns	1.8
S29GL032N90BFI030	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			TOP	33554432 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
S29GL064S70FHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm					67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	13 mm		70 ns	3	YES
S29GL128S10TFI010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL			R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		16	e3		260	NOR TYPE	.0001 Amp	18.4 mm	YES	100 ns	2.7	YES
S29GL256P10FFI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	268435456 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		256MX1	256M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM			R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				268435456 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S34ML16G202TFI200	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			Matte Tin (Sn)		DUAL			R-PDSO-G48	3	3.6 V	1.2 mm			12 mm					17179869184 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			3
S70FL01GSAGMFV011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V			e3			NOR TYPE	.0006 Amp	10.3 mm			3
S70FS01GSDSBHB210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel					BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1							8 mm			1.8
S70FS01GSDSBHB213	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		256MX4	256M	-40 Cel					BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1							8 mm			1.8
S70FS01GSDSBHM213	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		256MX4	256M	-40 Cel					BOTTOM			R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					1073741824 bit	1.7 V	IT IS ALSO CONFIGURED AS 1G X 1							8 mm			1.8
SDCE/64GB	Kingston Technology Company	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			68719476736 words				8	UNCASED CHIP						85 Cel		64GX8	64G	-25 Cel					UPPER			R-XUUC-N			1 mm			11 mm					549755813888 bit							NOR TYPE		15 mm
SDCIT/16GBSP	Kingston Technology Company	FLASH CARD	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					17179869184 words	3.3			8	UNCASED CHIP	DIE OR CHIP					85 Cel		16GX8	16G	-40 Cel					UPPER			R-XUUC-N											137438953472 bit							MLC NAND TYPE					3.3
SDIN7DP2-4G	Sandisk	FLASH				RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL					4294967296 words				8							85 Cel		4GX8	4G	-25 Cel					BOTTOM					3.6 V									34359738368 bit	2.7 V						SLC NAND TYPE
SDINBDG4-64G-XI2	Western Digital	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V	1.2 mm	3000 Write/Erase Cycles		11 mm					549755813888 bit	2.7 V						MLC NAND TYPE		13.5 mm
SDSQXAF-064G-GN6MA	Western Digital	FLASH CARD				RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					68719476736 words				8	UNCASED CHIP								64GX8	64G						UNSPECIFIED			R-XUUC-N											549755813888 bit							NOR TYPE
SDSQXAF-128G-GN6MA	Western Digital	FLASH CARD				RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD					137438953472 words				8	UNCASED CHIP								128GX8	128G						UNSPECIFIED			R-XUUC-N											1099511627776 bit							NOR TYPE
SFEM032GB1EA1TO-I-HG-12P-STD	Swissbit Ag	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		32GX8	32G	-40 Cel		NO			BOTTOM			R-PBGA-B153		3.6 V	1 mm	20000 Write/Erase Cycles	200 MHz	11.5 mm					274877906944 bit	2.7 V						SLC NAND TYPE		13 mm			3.3	NO
SFEM128GB1ED1TO-I-7G-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		128GX8	128G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V			200 MHz	11.5 mm					1099511627776 bit	2.7 V						TLC NAND TYPE		13 mm			3.3
SFEM256GB1ED1TO-I-8H-111-STD	Swissbit Ag	FLASH CARD		153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			274877906944 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	85 Cel		256GX8	256G	-40 Cel					BOTTOM			R-PBGA-B153		3.6 V			200 MHz	11.5 mm					2199023255552 bit	2.7 V						TLC NAND TYPE		13 mm			3.3
SQF-CM8V4-240G-ECE	Advantech	FLASH MODULE		75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY						85 Cel		240GX8	240G	-40 Cel					SINGLE			R-XSMA-N75			7.3 mm	3000 Write/Erase Cycles	200 MHz	22 mm					2061584302080 bit							TLC NAND TYPE		80 mm			3.3
SST25VF040B-50-4C-QAF-T	Microchip Technology	FLASH	COMMERCIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	R-XDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	50 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V			e4			NOR TYPE	.00003 Amp	6 mm
SST25VF040B-50-4C-SAF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00003 Amp	4.9 mm
SST25VF040B-80-4I-SAE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	100	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	4.9 mm			2.7
SST25VF512A-33-4I-SAE-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	524288 words			3/3.3	1	SMALL OUTLINE	SOP8,.23		Flash Memories	100	1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	33 MHz	3.9 mm	Not Qualified		SPI		524288 bit	2.7 V			e3			NOR TYPE	.000015 Amp	4.9 mm
SST26VF016B-80E/SM	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	125 Cel	3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	80 MHz	5.25 mm			SPI		16777216 bit	2.3 V						NOR TYPE	.000025 Amp	5.26 mm			2.5
SST26VF016BT-104V/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	105 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		16777216 bit	2.7 V			e3			NOR TYPE	.000025 Amp	5.26 mm			3
SST26VF020A-104I/SN	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	104 MHz	3.9 mm			SPI		2097152 bit	2.7 V				30	260	NOR TYPE	.00002 Amp	4.9 mm			3
SST26VF032BEUIT-104I/SM	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		25 mA	33554432 words	3			1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	104 MHz	5.25 mm			SPI		33554432 bit	2.7 V						NOR TYPE	.000045 Amp	5.26 mm			3
SST39VF6401B-70-4C-B1KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1		R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE	.00002 Amp	10 mm	YES	70 ns	3	YES
TH58BYG3S0HBAI6	Toshiba	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM			R-PBGA-B67		1.95 V	1 mm			6.5 mm					8589934592 bit	1.7 V								8 mm			1.8
TS1GCF220I	Transys Electronics	FLASH CARD		50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			1073741824 words	3.3			8	UNCASED CHIP						85 Cel		1GX8	1G	-40 Cel					UPPER			R-XUUC-N50		3.465 V	3.4 mm			36.4 mm					8589934592 bit	3.135 V	ALSO OPERATES WITH 5V SUPPLY					SLC NAND TYPE		42.8 mm			3.3
W25N01GVTCIT	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		35 mA	1073741824 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	10	1 mm	85 Cel		1GX1	1G	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	8 mm			3
W25Q01JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
W25Q16JVSNJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					16777216 bit	3 V				NOT SPECIFIED	NOT SPECIFIED			4.85 mm			3
W25Q256FVEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	268435456 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V						NOR TYPE	.000025 Amp	8 mm			3
W25Q32FVSFIG	Winbond Electronics	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.64 mm	100000 Write/Erase Cycles	104 MHz	7.49 mm	Not Qualified		SPI		33554432 bit	2.7 V						NOR TYPE	.00002 Amp	10.31 mm			2.7
W25Q32FVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V						NOR TYPE	.00002 Amp	8 mm			2.7
W25Q32FVZEIG	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V						NOR TYPE	.00002 Amp	8 mm			2.7
W25Q32JWZPIM	Winbond Electronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words	1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL			R-PDSO-N8		1.95 V	.8 mm		133 MHz	5 mm					33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			6 mm			1.8
W25Q64JVTCIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	1		20	1 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.