RECTANGULAR Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT45DB081B-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	1081344 words	3		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories		.55 mm	70 Cel		1081344X8	1081344	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		20 MHz	8 mm	Not Qualified		SPI		8650752 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	11.8 mm			2.7
AT49F002AT-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	25 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
DT28F160S5-70	Intel	FLASH	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	8	Flash Memories		.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL		R-PDSO-G56		5.25 V	1.9 mm			13.3 mm	Not Qualified				16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	16/32	e0			NOR TYPE	.00002 Amp	23.7 mm	YES	70 ns	5	NO
EPC16QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			TIN LEAD		QUAD		R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified				16777216 bit	3 V			e0				.00015 Amp	20 mm
JS28F00AP33TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				TOP	1073741824 bit	2.3 V	TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3	30	260			18.4 mm		105 ns	3
JS28F128J3F75H	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56							Not Qualified				134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F256P30BF	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL		R-PDSO-G56		2 V	1.2 mm		40 MHz	14 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	110 ns	1.8	NO
JS28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3					18.4 mm		105 ns	3
M25PE80-VMW6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	50 MHz	5.59 mm	Not Qualified	23 ms	SPI		8388608 bit	2.7 V			e4	40	260	NOR TYPE	.00001 Amp	5.3 mm			2.7
M28W320FCB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
M29W640GB70ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M58BW016FB7T3F	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD		R-PQFP-G80		3.6 V	3.4 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
MS28F016SV-85	Intel	FLASH	MILITARY	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	MIL-PRF-38535 Class N	GULL WING	PARALLEL	ASYNCHRONOUS	64K	135 mA	2097152 words	5	NO	3.3/5	8	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32	16	Flash Memories		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	32	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G56		5.5 V	1.9 mm			13.3 mm	Not Qualified				16777216 bit	3.15 V	USER-SELECTABLE 5V OR 12V VPP	128/256	e0			NOR TYPE	.00005 Amp	23.7 mm		85 ns	5	NO
MT28EW512ABA1HPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		95 ns	3
MT28EW512ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		95 ns	3
MT28F128J3RG-15ET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	150 ns	2.7	NO
MT29F1G01AAADDH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm			2.7
MT29F1G01AAADDH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MT29F1G08ABCHCET:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63		1.95 V	1 mm			10.5 mm					1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F2G16ABAEAWP-AIT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F4G08ABBDAH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm					4294967296 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT29F4G16ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified				4294967296 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT35XL512ABA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XU01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC128GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153		3.6 V	1.1 mm		200 MHz	11.5 mm					1099511627776 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
MTFC128GAZAQJP-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel		128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm					1099511627776 bit	2.7 V						NAND TYPE		13 mm
MTFDDAK240MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		240GX8	240G	-40 Cel					SINGLE		R-XSMA-N22		5.5 V	7.2 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MZ-77E2T0B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			2199023255552 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		2TX8	2T	0 Cel					UNSPECIFIED		R-XXMA-X			6.8 mm			69.85 mm					17592186044416 bit							NAND TYPE		100 mm
MZ-77E500B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			536870912000 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		500GX8	500G	0 Cel					UNSPECIFIED		R-XXMA-X			6.8 mm			69.85 mm					4294967296000 bit							NAND TYPE		100 mm
MZ7L3960HCJR-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					UNSPECIFIED		R-XXMA-N22		5.25 V	7 mm			69.85 mm					8246337208320 bit	4.75 V						MLC NAND TYPE		100.2 mm			5
P28F001BX-B120	Intel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,4K,112K	30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,2,1	YES	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.83 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	DEEP POWER-DOWN; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000001 Amp	41.91 mm		120 ns	12	NO
PC28F00AP33BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			8 mm				BOTTOM	1073741824 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
PC28F00BP30EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	31 mA	134217728 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified				2147483648 bit	1.7 V	SYMMETRICAL BLOCKS	16	e1	30	260	NOR TYPE	.00048 Amp	10 mm	YES	105 ns	3	NO
PC28F512P30BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,20		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	4,511	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm	Not Qualified			BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
PC28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
RC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
S25FL128SAGBHVB00	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	105 Cel		32MX4	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1					NOR TYPE	.0003 Amp	8 mm			3
S25FS128SDSBHB200	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V						NOR TYPE	.0003 Amp	8 mm			1.8
S25FS512SAGBHM210	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V			e1			NOR TYPE	.0001 Amp	8 mm			1.8
S26KS512SDPBHA020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1 mm			6 mm					536870912 bit	1.7 V								8 mm		96 ns	1.8
S29AL008D90TFI020	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED			18.4 mm		90 ns	3
S29AS008J70TFI040	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	524288 words	1.8	YES	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES		YES	DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	1.8	YES
S29GL512N11TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	90 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				536870912 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29WS128P0PBFW000	Cypress Semiconductor	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	8,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified			BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S34ML04G104BHI010	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	268435456 words	3.3	NO	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified				4294967296 bit	2.7 V		1K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML16G202BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			9 mm					17179869184 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
TE28F256J3C-125	Intel	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	16777216 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN LEAD	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				268435456 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	125 ns	2.7	NO
TE28F800C3BD70	Intel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.