SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W640FSB90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.000005 Amp		YES	90 ns		NO
M28F102-150K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		16.5862 mm		150 ns	12
M59DR032EA12ZF6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		TOP	33554432 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M28W640FSB85ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.000005 Amp		YES	85 ns		NO
M29F102B-50K6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL		8K,4K,16K,32K	50 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44				Not Qualified		BOTTOM	1048576 bit				e0			NOR TYPE	.0001 Amp			50 ns		YES
M28F102-90K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	16.5862 mm		90 ns	12	NO
M59DR032EB10ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V			e1			NOR TYPE		7 mm		100 ns	1.8
M59DR032EA85ZF6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		TOP	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	7 mm	YES	85 ns	1.8	YES
M59DR032EB12ZF6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M59DR032EB12ZF1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V						NOR TYPE		7 mm		120 ns	1.8
M59DR032EA85ZF1E	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	2			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		TOP	33554432 bit	1.8 V			e1			NOR TYPE		7 mm		85 ns	1.8
M28W320FST85ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified		TOP	33554432 bit							NOR TYPE	.000005 Amp		YES	85 ns		NO
M28W320FST90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified		TOP	33554432 bit				e0			NOR TYPE	.000005 Amp		YES	90 ns		NO
M28W320FSB90ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM	33554432 bit							NOR TYPE	.000005 Amp		YES	90 ns		NO
M28F102-100XK1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.75 V			e0			NOR TYPE	.0001 Amp	16.5862 mm		100 ns	12	NO
M59DR008E100ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	100 ns	1.8	YES
M59DR032EB12ZF6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
PSD813F1AV-70JIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	85 Cel		128KX8	128K	-40 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms		1048576 bit	3 V						NOR TYPE		19.1 mm		70 ns	3.3
M28F102-150XK6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.75 V						NOR TYPE		16.5862 mm		150 ns	12
M28F102-10XK1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.75 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	16.5862 mm		100 ns	12	NO
M59DR032EB85ZF6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	7 mm	YES	85 ns	1.8	YES
M59DR032EB12ZF1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V			e1			NOR TYPE		7 mm		120 ns	1.8
PSD813F1AV-12JT	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms		1048576 bit	3 V						NOR TYPE		19.1 mm		12 ns	3.3
M59DR032EB12ZF1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V						NOR TYPE		7 mm		120 ns	1.8
M28W320FST10ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	S-PBGA-B64				Not Qualified		TOP	33554432 bit							NOR TYPE	.000005 Amp		YES	100 ns		NO
M59DR008E120ZB1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M59DR032EB10ZF1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V						NOR TYPE		7 mm		100 ns	1.8
M28F102-200K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE		16.5862 mm		200 ns	12
M29DW128G60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	60 ns		YES
M28F102-200XK6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.75 V						NOR TYPE		16.5862 mm		200 ns	12
M59DR008F120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.35 mm	7 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
M28F102-100XK1TR	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel					QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.75 V						NOR TYPE		16.5862 mm		100 ns	12
M29F102B-120K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	1048576 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V			e0			NOR TYPE	.0001 Amp	16.5862 mm		120 ns	5	YES
PSD813F1AV-70JT	STMicroelectronics	FLASH	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	CHIP CARRIER			1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD	S-PQCC-J52	3.6 V	4.57 mm	19 mm	Not Qualified	10 ms		1048576 bit	3 V						NOR TYPE		19.1 mm		70 ns	3.3
M29F102B-70XK6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified		BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE		e0			NOR TYPE	.0001 Amp	16.5862 mm		70 ns	5	YES
M28F102-200K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	16.5862 mm		200 ns	12	NO
M29F102BB55K1T	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES			QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.585 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.586 mm		55 ns	5	YES
M29F102B-90XK6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	85 Cel		64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.25 V	4.57 mm	16.5862 mm	Not Qualified		BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE					NOR TYPE		16.5862 mm		90 ns	5
M28F102-120K3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE		16.5862 mm		120 ns	12
M28F102-15K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
M59DR008F100ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.35 mm	7 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	100 ns	1.8	YES
M28F102-100K6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			65536 words	5			16	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel					QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V						NOR TYPE		16.5862 mm		100 ns	12
M28F102-150K6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		YES	TIN LEAD		QUAD	S-PQCC-J44	5.5 V	4.57 mm	16.5862 mm	Not Qualified			1048576 bit	4.5 V	10K ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
M59DR008E120ZB1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	40 mA	524288 words	1.8	YES	1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Flash Memories	.75 mm	70 Cel		512KX16	512K	0 Cel	8,15	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	S-PBGA-B48	2.2 V	1.2 mm	7 mm	Not Qualified		BOTTOM	8388608 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	7 mm	YES	120 ns	1.8	YES
PSD813F1AV-70MIT	STMicroelectronics	FLASH	INDUSTRIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK			.65 mm	85 Cel		128KX8	128K	-40 Cel					QUAD	S-PQFP-G52	3.6 V	2.35 mm	10 mm	Not Qualified	10 ms		1048576 bit	3 V						NOR TYPE		10 mm		70 ns	3.3
M28W320FST10ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	2097152 words		NO	1.8/3.3,3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		BOTTOM	S-PBGA-B64				Not Qualified		TOP	33554432 bit				e0			NOR TYPE	.000005 Amp		YES	100 ns		NO
M28W640FSB85ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.000005 Amp		YES	85 ns		NO
M29F102B-45K6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL		8K,4K,16K,32K	50 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD	S-PQCC-J44				Not Qualified		BOTTOM	1048576 bit				e0			NOR TYPE	.0001 Amp			45 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.