SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F210-17C4FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-12C4FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-12C4FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-15C4FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-17C2FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-15C2FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-15C2FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-17C4FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-12C2FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-12C4FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-17C3FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-15C3FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-10C3FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-15C2FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-15C4FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-17C2FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-17C3FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-10C3FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-15C2FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-10C2FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-12C3FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-17C4FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-17C2FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel		64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-17C2FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-17C3FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-12C3FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-15C3FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-10C2FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-12C2FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-10C4FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-12C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-10C4FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-17C4FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-10C4FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-10C3FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-12C4FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-12C3FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO
TMS28F210-10C2FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-17C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-17C2FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F210-15C3FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-10C3FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-10C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-15C2FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F210-10C2FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-10C2FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	85 Cel		64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-10C3FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F210-12C3FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	YES	QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified	1048576 bit	4.5 V	BULK ERASE	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.