SQUARE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL256S10DHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified			268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	100 ns	2.7	YES
SST25VF040B-80-4I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified	SPI		4194304 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	5.275 mm			2.7
W25Q64JVSSJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			3.3
S25FL116K0XMFI010	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm		SPI		16777216 bit	2.7 V						NOR TYPE	.000005 Amp	5.28 mm			3
S25HS02GTDPBHV150	Infineon Technologies	FLASH		24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		110 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM		HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm		SPI		2147483648 bit	1.7 V						NOR TYPE	.00045 Amp	8 mm			1.8
S29GL01GS10DHA013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm			9 mm				1073741824 bit	2.7 V			e1	30	260			9 mm		100 ns	3
S29GL512S11DHI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	67108864 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified			536870912 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
SST25PF040C-40E/MF	Microchip Technology	FLASH	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel					DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm		SPI		4194304 bit	2.3 V						NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040C-40I/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm		SPI		4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040C-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm		SPI		4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040CT-40E/MF	Microchip Technology	FLASH	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	125 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm		SPI		4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040CT-40I/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm		SPI		4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	3 mm			3.3
SST25PF040CT-40V/MF	Microchip Technology	FLASH	INDUSTRIAL	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	4194304 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20			20	.5 mm	105 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-N10		3.6 V	1 mm	100000 Write/Erase Cycles	40 MHz	3 mm		SPI		4194304 bit	2.3 V			e3			NOR TYPE	.00001 Amp	3 mm			3.3
W25Q64JVSSJM	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3.3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	3 V	IT ALSO OPERATES AT 2.7V @ 104MHZ			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	5.28 mm			3.3
IS25LP040E-JBLE	Integrated Silicon Solution	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	524288 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm		SPI		4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000018 Amp	5.28 mm			3
IS25LQ032B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		32MX1	32M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm				33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			2.7
MT25QL128ABA1ESE-MSIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm				134217728 bit	2.7 V				30	260			5.285 mm			3.3
MT25QU01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			60 mA	134217728 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	133 MHz		Not Qualified	SPI		1073741824 bit							NOR TYPE	.00005 Amp
N25Q064A13ESED0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			2.7
PC28F256P30B85F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
S25FL128LAGMFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V			e3			NOR TYPE	.00006 Amp	5.28 mm			3
S25FS128SAGMFI103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
W25Q32JWSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	1.8			8	SMALL OUTLINE		1			1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.23 mm				33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.23 mm			1.8
AT17F16A-30CU	Microchip Technology	CONFIGURATION MEMORY		8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3.3			1	SMALL OUTLINE	SOLCC8,.24				1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL GOLD		DUAL			S-XDSO-N8	3	3.63 V	1.14 mm	10000 Write/Erase Cycles	10 MHz	5.99 mm	Not Qualified			16777216 bit	2.97 V			e4	40	260	NOR TYPE	.003 Amp	5.99 mm			3.3
AT17F16A-30JU	Microchip Technology	CONFIGURATION MEMORY		20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3.3			1	CHIP CARRIER	LDCC20,.4SQ				1.27 mm	85 Cel		16MX1	16M	-40 Cel			MATTE TIN	YES	QUAD			R-PQCC-J20		3.63 V	4.572 mm	10000 Write/Erase Cycles	10 MHz	8.966 mm	Not Qualified			16777216 bit	2.97 V			e3			NOR TYPE	.003 Amp	8.966 mm			3.3
IS25WP016D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	1.8			8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm				16777216 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
MT25QU128ABA8E54-0SIT	Micron Technology	FLASH	INDUSTRIAL	15	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY						85 Cel		128MX1	128M	-40 Cel					BOTTOM			S-PBGA-B15		2 V			166 MHz					134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED						1.8
MX25L3206EZUI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3		3/3.3	2	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.15,32	1	Flash Memories	20	.8 mm	85 Cel		16MX2	16M	-40 Cel			Matte Tin (Sn) - annealed		DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	86 MHz	4 mm	Not Qualified	SPI		33554432 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	4 mm			3.3
N25Q064A13ESED0F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			2.7
N25Q064A13ESED0G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified	SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			2.7
S25FL032P0XMFA013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		104 MHz	5.28 mm				33554432 bit	2.7 V			e3					5.28 mm			3
S25FL127SABMFV103	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified	SPI		134217728 bit	2.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			3
S25FL208K0RMFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	76 MHz	5.283 mm	Not Qualified	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm			3
S28HS02GTFPBHV053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	2 V			166 MHz					2147483648 bit	1.7 V						NOR TYPE					1.8
S29GL01GS11DHIV10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL128S90DHI020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL256S10DHB020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10DHB023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM			S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S10DHV020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
SST25VF032B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			1	SMALL OUTLINE					1.27 mm	70 Cel		32MX1	32M	0 Cel			NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8		3.6 V	2.16 mm		50 MHz	5.275 mm	Not Qualified			33554432 bit	2.7 V			e4			NOR TYPE		5.275 mm			2.7
SST25VF032B-66-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.275 mm	Not Qualified	SPI		33554432 bit	2.7 V			e4			NOR TYPE	.00002 Amp	5.275 mm			2.7
SST25VF032B-66-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		32MX1	32M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified	SPI		33554432 bit	2.7 V			e4			NOR TYPE	.00002 Amp	5.275 mm
SST25VF080B-50-4I-ZCE	Microchip Technology	FLASH	INDUSTRIAL	16	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		30 mA	8388608 words				1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA16,4X2,20			100	.5 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel					BOTTOM	1	HARDWARE/SOFTWARE	S-PBGA-B16		3.6 V	.4 mm	100000 Write/Erase Cycles	50 MHz	2 mm		SPI		8388608 bit	2.7 V						NOR TYPE	.00003 Amp	2 mm
W25Q40CLSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified	SPI		4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm			3
IS25LP064D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		166 MHz	5.28 mm				67108864 bit	2.7 V				30	250			5.28 mm			3
IS25WP080D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		1MX8	1M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm				8388608 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
PC28F128P30BF65E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	134217728 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
S29GL512S10DHI010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.