SQUARE Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
IS25LP032D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		4MX8	4M	-40 Cel			Tin (Sn)		DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				33554432 bit	2.3 V			e3	NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
S25FL128LAGMFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V			e3			NOR TYPE	.00006 Amp	5.28 mm			3
IS25LP128F-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	166 MHz	5.28 mm		SPI		134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	5.28 mm			3
MT25QU128ABA1ESE-0SITTR	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL			S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm				134217728 bit	1.7 V				30	260			5.285 mm			1.8
IS25WP128-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	105 Cel		128MX1	128M	-40 Cel			Matte Tin (Sn)		DUAL			S-PDSO-G8	1	1.95 V	2.16 mm		133 MHz	5.28 mm				134217728 bit	1.65 V			e3	10	260			5.28 mm			1.8
W25Q32JVSSIMTR	Winbond Electronics	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3.3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		33554432 bit	3 V						NOR TYPE	.00005 Amp	5.28 mm			3.3
SST25VF080B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		8388608 bit	2.7 V			e4			NOR TYPE	.00003 Amp	5.275 mm
S25FL032P0XMFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4KX16	4K	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-N8		3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified	SPI		65536 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	5.283 mm			3
IS25WP128-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	105 Cel		128MX1	128M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm				134217728 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
N25Q064A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL			S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm				67108864 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.285 mm			1.8
S25FL127SABMFI100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3	4	Flash Memories	20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm	Not Qualified	SPI		134217728 bit	2.7 V			e3			NOR TYPE	.0001 Amp	5.28 mm			3
IS25WP064A-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		29 mA	8388608 words	1.8			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	8MX8	8M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	1.95 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		67108864 bit	1.65 V			e3	10	260	NOR TYPE	.000035 Amp	5.28 mm			1.8
SST25VF032B-80-4I-S2AF	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		4MX8	4M	-40 Cel			GOLD OVER NICKEL		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified	SPI		33554432 bit	2.7 V			e4	40	260	NOR TYPE	.00002 Amp	5.275 mm			2.7
S25FL128LAGMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V			e3		260	NOR TYPE	.00006 Amp	5.28 mm			3
SST25VF080B-50-4C-S2AF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	8MX1	8M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		8388608 bit	2.7 V			e4	40	260	NOR TYPE	.00003 Amp	5.275 mm
S29GL256S90DHI010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
AT25SF641-SUB-T	Renesas Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		64MX1	64M	-40 Cel			TIN SILVER COPPER		DUAL			S-PDSO-G8	3	1.95 V	2.16 mm		104 MHz	5.28 mm				67108864 bit	1.65 V			e1					5.28 mm			2.7
IS25LP128F-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		16MX8	16M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		166 MHz	5.28 mm				134217728 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
SST25VF040B-50-4C-S2AF	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	10000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		4194304 bit	2.7 V			e4			NOR TYPE	.00002 Amp	5.275 mm
S25FL128LAGMFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V			e3			NOR TYPE	.00006 Amp	5.28 mm			3
S29GL01GS10DHI013	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
SST25VF016B-75-4I-S2AF-T	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		16MX1	16M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified	SPI		16777216 bit	2.7 V			e4			NOR TYPE	.00002 Amp	5.275 mm			2.7
IS25LP016D-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		1			1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				16777216 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
S25FL064LABNFI040	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.8 mm	85 Cel		64MX1	64M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V			e3		260			4 mm			3
W25Q128JVSJQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3.3			8	SMALL OUTLINE	SOP8,.3	4		20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	5.28 mm			3.3
IS25LP128-JBLE-TY	Integrated Silicon Solution	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		22 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V	OPERATES WITH 2.3VMIN @104MHZ					NOR TYPE	.000065 Amp	5.28 mm			2.7
W25Q32FVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified	SPI		33554432 bit	2.7 V			e3			NOR TYPE	.00002 Amp	5.28 mm			2.7
S25FL064LABNFV040	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1		e3					4 mm			3
IS25WP064A-JBLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			8388608 words	1.8			8	SMALL OUTLINE					1.27 mm	105 Cel		8MX8	8M	-40 Cel					DUAL			S-PDSO-G8		1.95 V	2.16 mm		133 MHz	5.28 mm				67108864 bit	1.65 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			1.8
MX25L1606EZUI-12G	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.15,32	1	Flash Memories	20	.8 mm	85 Cel		2MX8	2M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	86 MHz	4 mm	Not Qualified	SPI		16777216 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	4 mm			3
M25P32-VMW6TGBA	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	75 MHz	5.285 mm	Not Qualified	SPI		33554432 bit	2.3 V				30	260	NOR TYPE	.00001 Amp	5.285 mm			2.7
PC28F640P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM			S-PBGA-B64							Not Qualified		BOTTOM	67108864 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
S29GL128S90DHI010	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S25FL064LABMFV010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3		260			5.28 mm			3
S25FL064LABNFI041	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1		e3					4 mm			3
SST25VF040B-50-4I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words				1	SMALL OUTLINE	SOP8,.3			100	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			MATTE TIN		DUAL	1	SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm		SPI		4194304 bit	2.7 V			e3	40	260	NOR TYPE	.00003 Amp	5.275 mm
IS25LP016D-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	105 Cel	3-STATE	2MX8	2M	-40 Cel			Tin (Sn)		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		16777216 bit	2.3 V			e3			NOR TYPE	.00002 Amp	5.28 mm			3
S25FL128LAGMFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm		SPI		134217728 bit	2.7 V			e3			NOR TYPE	.00006 Amp	5.28 mm			3
S25FL064LABMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
S25FL064LABNFA010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					4 mm			3
S29GL01GS10DHI020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
SST25VF040B-50-4C-S2AF-T	Microchip Technology	FLASH	COMMERCIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	4194304 words			3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel			NICKEL PALLADIUM GOLD		DUAL	1	SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	50 MHz	5.275 mm	Not Qualified	SPI		4194304 bit	2.7 V			e4			NOR TYPE	.00003 Amp	5.275 mm
IS25LP032D-JBLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel					DUAL			S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm				33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
S28HS02GTFPBHV050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY						105 Cel		2GX1	2G	-40 Cel					BOTTOM			S-PBGA-B24	3	2 V			166 MHz					2147483648 bit	1.7 V						NOR TYPE					1.8
S25FL064LABMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL			S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm				67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3			NOR TYPE		5.28 mm			3
S29GL01GS11DHIV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM			S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL256S11DHV020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	105 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm			BOTTOM/TOP	268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
W25Q64CVSSIG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel					DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.28 mm	Not Qualified	SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	5.28 mm		8.5 ns	2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.