SQUARE Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST25VF080B-80-4I-S2AE	Microchip Technology	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	8388608 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		8MX1	8M	-40 Cel			Matte Tin (Sn) - annealed		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI		8388608 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	5.275 mm			2.7
SST26VF032-80-5I-S2AE	Microchip Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		30 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	100	1.27 mm	85 Cel		32MX1	32M	-40 Cel			Matte Tin (Sn) - annealed		DUAL	SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	80 MHz	5.275 mm	Not Qualified		SPI		33554432 bit	2.7 V			e3	40	260	NOR TYPE	.000015 Amp	5.275 mm			2.7
W25Q128FVSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.28 mm	Not Qualified		SPI		134217728 bit	2.7 V						NOR TYPE	.00002 Amp	5.28 mm			3
W25Q16CVSSJG	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE					1.27 mm	105 Cel		2MX8	2M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm			5.23 mm					16777216 bit	2.7 V								5.23 mm			2.7
W25Q32FVSSIQ	Winbond Electronics	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	104 MHz	5.23 mm	Not Qualified		SPI		33554432 bit	2.7 V						NOR TYPE	.00002 Amp	5.23 mm			2.7
IS25LQ020B-JBLE	Integrated Silicon Solution	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			1	SMALL OUTLINE					1.27 mm	105 Cel		2MX1	2M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm		104 MHz	5.28 mm					2097152 bit	2.3 V								5.28 mm			3
MX25L1606EZUI-12GTR	Macronix	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.15,32	1		20	.8 mm	85 Cel		2MX8	2M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	.6 mm	100000 Write/Erase Cycles	86 MHz	4 mm			SPI		16777216 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	4 mm			3
S25FL128LAGMFV013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	2.7 V			e3			NOR TYPE	.00006 Amp	5.28 mm			3
S29GL064S90DHVV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm					67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		90 ns	3	YES
N25Q064A13ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	64	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX64	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			3
S25FL064LABNFB013	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					4 mm			3
S25FL064LABNFB040	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT IS ALSO CONFIGURED AS 64M X 1		e3					4 mm			3
S29GL01GT12DHN010	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V								9 mm		120 ns	2.7
S29GL256S10DHI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified				268435456 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	100 ns	2.7	YES
AT29C1024-70JI	Atmel	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		NO	TIN LEAD		QUAD		S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms			1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
S25FL208K0RMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	1048576 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	76 MHz	5.283 mm	Not Qualified		SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm			3
S29GL512T11DHB010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1		e1					9 mm		110 ns	2.7
AT29C1024-70JC	Atmel	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		NO	TIN LEAD		QUAD		S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms			1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
S29GL256S11DHVV20	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm					268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
AT49BV8192A-11CI	Atmel	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,992K	50 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	8	Flash Memories		.75 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1	YES	TIN LEAD		BOTTOM		S-PBGA-B48		3.6 V	1.25 mm			7 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.00005 Amp	7 mm		110 ns	3	YES
M29DW128G60ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	15 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	8,62	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified			BOTTOM/TOP	134217728 bit			8				NOR TYPE	.0001 Amp		YES	60 ns		YES
N25Q032A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			32	SMALL OUTLINE					1.27 mm	85 Cel		1MX32	1M	-40 Cel					DUAL		S-PDSO-G8		2 V	2.16 mm		108 MHz	5.285 mm					33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.285 mm			1.8
PC28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	54 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified				134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F128P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64							Not Qualified			TOP	134217728 bit			4				NOR TYPE	.000075 Amp		YES	85 ns		NO
S25FL032P0XMFV013	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	105 Cel		4KX16	4K	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-N8		3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified		SPI		65536 bit	2.7 V						NOR TYPE	.00001 Amp	5.283 mm			3
S25FL064LABNFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	105 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					4 mm			3
S25FL064LABNFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					4 mm			3
S25FL116K0XMFI013	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3		3/3.3	4	SMALL OUTLINE	SOP8,.3	2	Flash Memories	20	1.27 mm	85 Cel		4MX4	4M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	108 MHz	5.283 mm	Not Qualified		SPI		16777216 bit	2.7 V	ALSO CONFIGURABLE AS 16M X 1		e3			NOR TYPE	.000005 Amp	5.283 mm			3
S25FL128LAGMFI011	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.00006 Amp	5.28 mm			3
S25FL132K0XMFI011	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		33554432 bit	2.7 V						NOR TYPE	.000008 Amp	5.28 mm			3
S25FL216K0PMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.159 mm	100000 Write/Erase Cycles	65 MHz	5.283 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000032 Amp	5.283 mm			3
S25FS064SDSMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1		e3					5.283 mm			1.8
S25FS128SAGMFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS128SAGMFV100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S29AL016J70FFI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29GL064S80DHV020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm					67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		80 ns	3	YES
S29GL128S11DHIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words	3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified				134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
S29GL512S10DHA020	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512S10DHI023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm				BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512T11DHB013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1							9 mm		110 ns	2.7
TMS28F210-15C4FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
TMS28F210-17C2FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	125 Cel		64KX16	64K	-40 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	100 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		170 ns	12	NO
TMS28F210-17C3FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	1000 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		170 ns	12	NO
TMS28F210-17C4FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		170 ns	12	NO
TMS28F210-15C4FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
TMS28F210-12C2FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel		64KX16	64K	0 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	100 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		120 ns	12	NO
TMS28F210-12C2FNE	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel		64KX16	64K	-40 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	100 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		120 ns	12	NO
TMS28F210-12C3FNE4	Texas Instruments	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS		J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		YES			QUAD		S-PQCC-J44		5.5 V	4.57 mm	1000 Write/Erase Cycles		16.5862 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm		120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.