AUTOMOTIVE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FL256LAGNFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3	3.6 V	.8 mm	100000 Write/Erase Cycles	133 MHz	5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	6 mm			3
MT25QL128ABA8ESF-0AAT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA		3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	105 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.29 mm			SPI		134217728 bit	2.7 V						NOR TYPE	.00008 Amp	5.29 mm			3
S25FL256SAGMFM000	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1		e3					10.3 mm			3
S25FL512SAGMFMG10	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words	3			8	SMALL OUTLINE	SOP16,.4	4		20	1.27 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S25FL128LAGMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	2.7 V			e3		260	NOR TYPE	.00006 Amp	5.28 mm			3
MT25QU02GCBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		94 mA	268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1			1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm			SPI		2147483648 bit	1.7 V			e1	30	260	NOR TYPE	.00013 Amp	8 mm			1.8
MT25QU128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
S26KS512SDPBHM020	Infineon Technologies	FLASH	AUTOMOTIVE	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V	1 mm			6 mm					536870912 bit	1.7 V								8 mm		96 ns	1.8
MT25QL128ABA8E12-0AAT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		35 mA		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		16MX8	16M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.00008 Amp	8 mm			3
MT25QU01GBBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V			e1	30	260			8 mm			1.8
MT25QL128ABB8ESF-0AUT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	10.3 mm			3
MT25QL01GBBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		55 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1		20	1 mm	125 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0006 Amp	8 mm
S29AL016J55TFNR10	Infineon Technologies	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	55 ns	3	YES
IS25LP016D-JNLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		1			1.27 mm	125 Cel		2MX8	2M	-40 Cel					DUAL		R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					16777216 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3
S25FL128SAGMFM000	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e3	30	260			10.3 mm			3
M58BW32FB4ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	4K,2K,16K	50 mA	524288 words	3.3	NO	3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	4,8,62	YES			BOTTOM		R-PBGA-B80		3.6 V	1.7 mm			10 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V		4				NOR TYPE	.00015 Amp	12 mm	YES	45 ns	3.3	NO
MT25QL02GCBB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		85 mA	268435456 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI	BOTTOM/TOP	2147483648 bit	2.7 V						NOR TYPE	.0005 Amp	8 mm			3
IS25LP032D-JBLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
S25FL064LABMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			Matte Tin (Sn)		DUAL		S-PDSO-G8		3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3			NOR TYPE		5.28 mm			3
AT25SF041-SSHDHR-T	Adesto Technologies	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE						125 Cel		4MX1	4M	-40 Cel					DUAL		R-PDSO-G8		3.6 V			85 MHz						4194304 bit	2.5 V											2.7
MT25QU128ABB8ESF-0AUT	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP16,.4	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		2 V	2.65 mm		166 MHz	7.5 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	10.3 mm			1.8
S25FL064LABMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
AT25SF161-SSHDHR-T	Dialog Semiconductor	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words				1	SMALL OUTLINE						125 Cel		16MX1	16M	-40 Cel					DUAL		R-PDSO-G8		3.6 V			85 MHz						16777216 bit	2.5 V											2.7
MT25QL512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
AT25SF161-SSHDHR-B	Dialog Semiconductor	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words				1	SMALL OUTLINE						125 Cel		16MX1	16M	-40 Cel					DUAL		R-PDSO-G8		3.6 V			85 MHz						16777216 bit	2.5 V											2.7
IS25LP032D-JNLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel		4MX8	4M	-40 Cel					DUAL		R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					33554432 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3
S25FL256LAGMFM000	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL128SAGMFMG00	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		32MX4	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e3	30	260			10.3 mm			3
IS25LP032D-JBLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	125 Cel		4MX8	4M	-40 Cel			Tin (Sn)		DUAL		S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					33554432 bit	2.3 V			e3	NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
M29W160ET70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
N25Q064A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		8MX8	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
AT25XE041B-MHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			4194304 words				1	SMALL OUTLINE						125 Cel		4MX1	4M	-40 Cel					DUAL		R-PDSO-N8	1	3.6 V			85 MHz						4194304 bit	1.7 V											1.8
MT25QL128ABB1ESE-0AUT	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.285 mm			SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	5.285 mm			3
M58BW016FB7T3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD		R-PQFP-G80		3.6 V	3.4 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	20 mm	YES	70 ns	3	NO
MT25QU256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					268435456 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			1.8
IS25LP016D-JBLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	2097152 words	3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	2MX8	2M	-40 Cel			Tin (Sn)		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		16777216 bit	2.3 V			e3			NOR TYPE	.00003 Amp	5.28 mm			3
AT25DF041B-SSHNHR-T	Renesas Electronics	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			524288 words				8	SMALL OUTLINE	SOP8,.25				1.27 mm	125 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	20000 Write/Erase Cycles	85 MHz	3.9 mm			SPI		4194304 bit	1.7 V							.000065 Amp	4.925 mm
IS25LP032D-JNLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			4194304 words	3			8	SMALL OUTLINE		1			1.27 mm	125 Cel		4MX8	4M	-40 Cel			Tin (Sn)		DUAL		R-PDSO-G8		3.6 V	1.75 mm		133 MHz	3.9 mm					33554432 bit	2.3 V			e3	NOT SPECIFIED	NOT SPECIFIED			4.9 mm			3
MT25QL256ABA8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QU128ABB1ESE-0AUT	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		35 mA	16777216 words	1.8			8	SMALL OUTLINE	SOP8,.3	1			1.27 mm	125 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		2 V	2.16 mm		166 MHz	5.285 mm			SPI		134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	5.285 mm			1.8
S25FL064LABMFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	3.6 V	2.16 mm		108 MHz	5.28 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					5.28 mm			3
MT25QU512ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					536870912 bit	1.7 V			e1	30	260			8 mm			1.8
S70FL01GSAGBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	128MX8	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
IS25LP064A-JBLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE					1.27 mm	125 Cel		64MX1	64M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.28 mm					67108864 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED			5.28 mm			3
IS25LP128F-JBLA3	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		30 mA	16777216 words	3			8	SMALL OUTLINE	SOP8,.3	1		20	1.27 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	166 MHz	5.28 mm			SPI		134217728 bit	2.3 V	ALSO OPERATES WITH 133MHZ @ 2.3VMIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	5.28 mm			3
N25Q128A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
S25FL256LAGMFN000	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			67108864 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel		64MX4	64M	-40 Cel					DUAL		R-PDSO-G16		3.6 V	2.65 mm		133 MHz	7.5 mm					268435456 bit	2.7 V	IT ALSO HAVE MEMORY WIDTH X 1					NOR TYPE		10.3 mm			3
IS25WP128-JBLE1	Integrated Silicon Solution	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	SMALL OUTLINE					1.27 mm	125 Cel		128MX1	128M	-40 Cel			Matte Tin (Sn)		DUAL		S-PDSO-G8	1	1.95 V	2.16 mm		133 MHz	5.28 mm					134217728 bit	1.65 V			e3	10	260			5.28 mm			1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.