AUTOMOTIVE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FS512SAGBHM210	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	1.7 V			e1			NOR TYPE	.0001 Amp	8 mm			1.8
M25P32-VMF3TPB	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel			4MX8	4M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm			2.7
M29W160FT70N3F	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
AB28F400B5B80	Intel	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			512KX8	512K	-40 Cel					DUAL			R-PDSO-G44		5.5 V	2.95 mm			13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	MIN 100K EXTENDED BLOCK ERASE CYCLES; CAN BE CONFG AS 125KX16; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		80 ns	5
DE28F800F3T95	Intel	FLASH	AUTOMOTIVE	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	60 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, SHRINK PITCH	SOP56,.6,32		Flash Memories		.8 mm	125 Cel			512KX16	512K	-40 Cel	8,15	YES	Tin/Lead (Sn/Pb)		DUAL			R-PDSO-G56		3.6 V	1.9 mm			13.3 mm	Not Qualified			TOP	8388608 bit	3 V	TOP BOOT BLOCK	4	e0			NOR TYPE	.0001 Amp	23.7 mm		95 ns	3	NO
M25P16-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel			2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	4.9 mm			3
M25P16-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel			2MX8	2M	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			3
M25P40-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel			512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		4194304 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm			2.7
M25P40-VMN3TPB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	2.7		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel			512KX8	512K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		4194304 bit	2.3 V				30	260	NOR TYPE	.00005 Amp	4.9 mm			2.7
M29F800FT55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G44		5.5 V	3 mm			12.6 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W160FT70N3E	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES	TIN/TIN BISMUTH	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
N25Q256A13EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	125 Cel			256MX1	256M	-40 Cel					DUAL			R-PDSO-N8		3.6 V	1 mm		108 MHz	6 mm					268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
S25FL064LABNFM013	Infineon Technologies	FLASH	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			.8 mm	125 Cel			16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-N8	3	3.6 V	.6 mm		108 MHz	4 mm					67108864 bit	2.7 V	IT ALSO HAVE X1 MEMORY WIDTH		e3					4 mm			3
S25FL128SAGMFM003	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3			4	SMALL OUTLINE		2			1.27 mm	125 Cel			32MX4	32M	-40 Cel			MATTE TIN		DUAL			R-PDSO-G16	3	3.6 V	2.65 mm		133 MHz	7.5 mm		500 ms			134217728 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e3	30	260			10.3 mm			3
S25FL256LAGBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	32MX8	32M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
S25FL256LAGMFM003	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel		3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL256SAGBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel			64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM			R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1		e1			NOR TYPE		8 mm			3
S25FS064SAGNFN030	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	GRID ARRAY		2			1.27 mm	125 Cel			16MX4	16M	-40 Cel					BOTTOM			R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm					67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1							6 mm			1.8
S25FS064SDSMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	1.8			4	SMALL OUTLINE		2			1.27 mm	125 Cel			16MX4	16M	-40 Cel			MATTE TIN		DUAL			S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1		e3					5.283 mm			1.8
S70FL01GSAGMFM010	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel		3-STATE	128MX8	128M	-40 Cel			MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		1073741824 bit	2.7 V			e3			NOR TYPE		10.3 mm			3
S70FL01GSDSBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		200 mA	134217728 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		3-STATE	128MX8	128M	-40 Cel					BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	80 MHz	6 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
SST26VF016B-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel		3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		16777216 bit	2.3 V						NOR TYPE	.000025 Amp	4.9 mm			2.5
SST26VF016BT-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel		3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		16777216 bit	2.3 V						NOR TYPE	.000025 Amp	4.9 mm			2.5
SST26VF016BT-80E/MF	Microchip Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		25 mA	16777216 words	2.5			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			100	1.27 mm	125 Cel		3-STATE	16MX1	16M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	80 MHz	5 mm			SPI		16777216 bit	2.3 V						NOR TYPE	.000025 Amp	6 mm			2.5
SST26VF080AT-80E/SN	Microchip Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	8388608 words	2.5			1	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel		3-STATE	8MX1	8M	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	80 MHz	3.9 mm			SPI		8388608 bit	2.3 V				30	260	NOR TYPE	.00003 Amp	4.9 mm			2.5
TMS28F800VB10BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE					1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.63 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	3
TMS28F512A-15C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		150 ns	12	NO
TMS28F800AEYT12BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm				TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							18.4 mm		120 ns	5
TMS28F800SZT-70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
TMS29LF400T-120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				4194304 bit	2.7 V	CAN ALSO BE CONFIGURED AS 256K X 16					NOR TYPE		18.4 mm		120 ns	3
TMS28F512A-12C4FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES			QUAD			R-PQCC-J32		5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified				524288 bit	4.5 V						NOR TYPE	.0001 Amp	13.97 mm		120 ns	12	NO
TMS28F200AFB70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	125 Cel			128KX16	128K	-40 Cel					DUAL			R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	CAN BE PROGRAMMED AT 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	5
TMS28F010-15C3DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel			128KX8	128K	-40 Cel		YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	1000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO
TMS28F008ASYB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE					1.27 mm	125 Cel			512KX16	512K	-40 Cel					DUAL			R-PDSO-G44		3.6 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							28.2 mm		80 ns	3
TMS28F800ET80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS28F400BZB-80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,3	YES			DUAL			R-PDSO-G44		5.5 V	2.63 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK					NOR TYPE	.000008 Amp	28.2 mm		80 ns	12	NO
TMS28F008ALYB10BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	125 Cel			512KX16	512K	-40 Cel					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm				BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm		100 ns	5
TMS28F040-12C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel	YES		512KX8	512K	-40 Cel	16	YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified				4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		120 ns	12	YES
TMS29LF800B-90CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		1.27 mm	125 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm		90 ns	2.7	YES
TMS29LF800T-120EQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL			R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified			TOP	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp			120 ns		YES
TMS28F008LT12CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	3
TMS29F010-20JQ	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories		2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel	8	YES			DUAL			R-GDIP-T32		5.5 V	4.907 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified				1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp			200 ns	5	YES
TMS28F008SZB-70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
TMS28F800AZYB12CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			1MX8	1M	-40 Cel					DUAL			R-PDSO-G44		5.5 V	2.625 mm			13.3 mm				BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							28.2 mm		120 ns	5
TMS28F010B-10C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		100 ns	12	NO
TMS28F512-12C3NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel			64KX8	64K	-40 Cel		YES			DUAL			R-PDIP-T32		5.5 V	5.08 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified				524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm		120 ns	12	NO
TMS28F040-17C2DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	125 Cel	YES		512KX8	512K	-40 Cel	16	YES			DUAL			R-PDSO-G40				100 Write/Erase Cycles							4194304 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp			170 ns		YES
TMS28F010B-15C4DUQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	125 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES			DUAL			R-PDSO-G32		5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm		150 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.