AUTOMOTIVE Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F800AVB-120BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	120 ns	3
TMS28F512-15C4NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F512A-10C3DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F010-10C4DDQ	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			128KX8	128K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F010-10C3DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel			128KX8	128K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F010A-10C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER				1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel				QUAD	R-PQCC-J32	5.5 V	3.56 mm		11.43 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES				NOR TYPE		13.97 mm	100 ns	12
TMS28F512-10C2NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
TMS28F008AEYB10CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm	100 ns	5
TMS28F010A-10C3FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	100 ns	12	NO
TMS28F512-17C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F800ZB70CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	70 ns	3
TMS28F512A-12C3DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES	3-STATE	64KX8	64K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F800ST70BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F512-17C3FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			64KX8	64K	-40 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS29F800B-90BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	16	Flash Memories	.5 mm	125 Cel			1MX8	1M	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	CAN ALSO BE CONFIGURED AS 512K X 16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	5	YES
TMS28F512-12C2FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			64KX8	64K	-40 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F800VT12CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		28.2 mm	120 ns	3
TMS28F010B-12C4FMQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F008AZYT70CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						18.4 mm	70 ns	3
TMS28F800ST70BQ	Texas Instruments	FLASH	AUTOMOTIVE	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					125 Cel			1MX8	1M	-40 Cel				BOTTOM	R-PBGA-B48	3.6 V				Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F800ET70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		18.4 mm	100 ns	3
TMS28F210-15C4FNQ	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	125 Cel		3-STATE	64KX16	64K	-40 Cel		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS28F800EB70CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F200AFT80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	80 ns	5	NO
TMS28F512-17C4DUQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel	YES		64KX8	64K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS29F400B-120CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 256K X 16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	120 ns	5	YES
TMS28F040-12C4NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			512KX8	512K	-40 Cel	16	YES		DUAL	R-PDIP-T32			10000 Write/Erase Cycles				4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		120 ns		YES
TMS28F008SZT-70BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK				NOR TYPE		18.4 mm	70 ns	3
TMS28F210-15C2FNQ4	Texas Instruments	FLASH	AUTOMOTIVE	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	125 Cel			64KX16	64K	-40 Cel		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	150 ns	12	NO
TMS29F259-250JQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel		NO		DUAL	R-GDIP-T32	5.25 V	4.907 mm		15.24 mm	Not Qualified		262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS28F008SZT-80CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK				NOR TYPE		18.4 mm	80 ns	3
TMS28F200AFB90CDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	125 Cel			128KX16	128K	-40 Cel				DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE PROGRAMMED AT 12V VPP; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	90 ns	5
TMS29F400T-90BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	16	Flash Memories	.5 mm	125 Cel			512KX8	512K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 256K X 16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	5	YES
TMS28F512A-10C3NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	100 ns	12	NO
TMS28F002AFB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	80 ns	5	NO
TMS28F512-15C2FMQ	Texas Instruments	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	125 Cel			64KX8	64K	-40 Cel		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F800SB70BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	125 Cel			1MX8	1M	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F010A-10C3NQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE				2.54 mm	125 Cel		3-STATE	128KX8	128K	-40 Cel				DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		41.4 mm	100 ns	12
TMS29LF800B-120BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	1.27 mm	125 Cel		3-STATE	512KX16	512K	-40 Cel	1,2,1,15	YES	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	120 ns	2.7	YES
TMS28F010-12C2NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			128KX8	128K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F008ASYT80BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						28.2 mm	80 ns	3
TMS28F008AZYB80CDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	80 ns	3
TMS28F512-17C4NQ	Texas Instruments	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	125 Cel			64KX8	64K	-40 Cel		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F008AEYT12BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm	120 ns	5
TMS28F512A-10C4DDQ4	Texas Instruments	FLASH	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS28F008ASYT70BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	125 Cel			512KX16	512K	-40 Cel				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						28.2 mm	70 ns	3
TMS28F002AZB90BDBJQ	Texas Instruments	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	125 Cel		3-STATE	256KX8	256K	-40 Cel	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	28.2 mm	90 ns	12	NO
TMS29F400B-90BDCDQ	Texas Instruments	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	YES	DUAL	R-PDSO-G48			10000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		90 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.