COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F210-15C3NL	Texas Instruments	FLASH	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	IN-LINE	DIP40,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	64KX16	64K		YES		DUAL	R-PDIP-T40	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	52.455 mm	150 ns	12	NO
TMS28F008AZYB10CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE				1.27 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						28.2 mm	100 ns	5
TMS28F800AVT-80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		28.2 mm	80 ns	3
TMS29F512-100N	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		256K		65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			64KX8	64K	2	NO		DUAL	R-PDIP-T32					Not Qualified		524288 bit			128	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE			100 ns		YES
TMS28F800ST70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F1600B80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	1048576 words	3	NO	3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			1MX16	1M	1,2,1,15	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	ALSO REQUIRES 5V VCC FOR NORMAL OPERATION; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	80 ns	3	NO
TMS28F008AEYB80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	80 ns	3
TMS28F800AST-70CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			1MX8	1M	1,2,1,7	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	3 V	100000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE	.000008 Amp	18.4 mm	100 ns	3	NO
TMS28F800SB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS28F200BZB-70BDBRL	Texas Instruments	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G56	5.5 V	1.2 mm	10000 Write/Erase Cycles	14 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	DEEP POWER-DOWN				NOR TYPE	.0000012 Amp	18.4 mm	70 ns	12	NO
TMS28F800AZYB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						18.4 mm	70 ns	3
TMS29F010-150JL4	Texas Instruments	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K	15 mA	131072 words	5	YES	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	128KX8	128K	8	YES		DUAL	R-GDIP-T32	5.25 V	4.907 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.001 Amp		150 ns	5	YES
TMS28F800AVB12BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	524288 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			512KX16	512K	1,2,1,7	YES		DUAL	R-PDSO-G48			10000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp		120 ns		NO
TMS28F002ASB60CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	110 ns	5	NO
TMS28F010-15C2DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES		128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS29VF040-20C5FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	8	YES		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	200 ns	3	YES
TMS28F210-17C4FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		3-STATE	64KX16	64K		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	10000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS29VF040-15C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	8	YES		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V	100000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	3	YES
TMS28F400BZB-80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK				NOR TYPE	.0000012 Amp	28.2 mm	80 ns	12	NO
TMS28F008AVB70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	100 ns	3
TMS28F400ASB80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	3 V	CAN BE CONFG AS 256K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	150 ns	5	NO
TMS28F008AVT-100BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK				NOR TYPE		18.4 mm	100 ns	3
TMS28F008AVYT10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm	100 ns	5
TMS29F512-120DD	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	CERAMIC	YES		CMOS	J BEND	PARALLEL		256K		65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K	2	NO		QUAD	R-XQCC-J32					Not Qualified		524288 bit			128	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE			120 ns		YES
TMS29F512-150DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	64KX8	64K				DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.75 V					NOR TYPE		18.415 mm	150 ns	5
TMS28F200ASB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	3 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	130 ns	5	NO
TMS28F210-17C2FNL4	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel			64KX16	64K		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	100 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	170 ns	12	NO
TMS28F004AET70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	TOP	4194304 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP				NOR TYPE		28.2 mm	70 ns	5
TMS28F008AVT12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	1048576 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			1MX8	1M	1,2,1,7	YES		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	TOP	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp		120 ns		NO
TMS28F002AEB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	5	NO
TMS28F010A-10C3DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	128KX8	128K				DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES				NOR TYPE		18.415 mm	100 ns	12
TMS28F040-10C2DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			512KX8	512K	16	YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	YES
TMS28F512-12C4DUL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES		64KX8	64K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS29LF040-15C5FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			512KX8	512K	8	YES		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	3 V	100000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	3	YES
TMS28F800AVYT10CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK						18.4 mm	100 ns	5
TMS28F800AZYB80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	80 ns	3
TMS28F008ST80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	3 V	USER SELECTABLE 5V VCC; TOP BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS28F200AEB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	110 ns	5	NO
TMS29F512-150DD	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	CERAMIC	YES		CMOS	J BEND	PARALLEL		256K		65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K	2	NO		QUAD	R-XQCC-J32					Not Qualified		524288 bit			128	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE			150 ns		YES
TMS28F010-15C3NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			128KX8	128K		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	150 ns	12	NO
TMS28F004AZB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V					NOR TYPE		28.2 mm	70 ns	12
TMS29LF800B-120ELB	Texas Instruments	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			512KX16	512K	1,2,1,15	YES	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles			BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		120 ns		YES
TMS28F800LB10BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel			1MX8	1M				BOTTOM	R-PBGA-B48	3.6 V				Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK				NOR TYPE			100 ns	3
TMS28F1600T80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	1048576 words	3	NO	3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			1MX16	1M	1,2,1,15	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	2.7 V	ALSO REQUIRES 5V VCC FOR NORMAL OPERATION; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	80 ns	3	NO
TMS28F004ASB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP				NOR TYPE		28.2 mm	60 ns	5
TMS28F004AZB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V					NOR TYPE		28.2 mm	60 ns	12
TMS28F004AST70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	130 ns	5	NO
TMS29F040-70C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	8	YES		TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.