COMMERCIAL Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

TMS29F400B-90BDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

524288 words

5

YES

5

8

SMALL OUTLINE

SOP44,.63

16

Flash Memories

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,7

YES

YES

DUAL

R-PDSO-G44

5.5 V

2.63 mm

10000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

4194304 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

28.2 mm

90 ns

5

YES

TMS29F008B-80BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

80 ns

5

YES

TMS28F800LT12BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS28F008ALYT10BDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE

1.27 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

5.5 V

2.625 mm

13.3 mm

TOP

8388608 bit

4.5 V

TOP BOOT BLOCK

28.2 mm

100 ns

5

TMS28F800SZT-70BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

4.5 V

10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

3

TMS28F800ZB80CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

80 ns

3

TMS28F200AET60CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3

NO

3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

1,2,1,1

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

2097152 bit

2.7 V

CAN BE CONFG AS 128K X 16; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

110 ns

5

NO

TMS29LF008B-90CDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,32K,64K

60 mA

1048576 words

3.3

YES

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

1,2,1,15

YES

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

100000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

100000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

90 ns

3

YES

TMS28F800SZB-70CDBJL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

70 ns

3

TMS28F400AST60CDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

3.3

NO

3.3/5

8

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G44

3.6 V

2.63 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

3 V

CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

28.2 mm

110 ns

5

NO

TMS28F800AVB-100CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

100000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

100 ns

3

TMS28F010A-15C4DDL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

10000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F800AZB-70CDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

60 mA

1048576 words

5

NO

5

8

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,7

YES

DUAL

R-PDSO-G44

5.5 V

2.63 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; BOTTOM BOOT BLOCK

NOR TYPE

.000008 Amp

28.2 mm

70 ns

3

NO

TMS28F400AFT60CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

4.5 V

CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

60 ns

5

NO

TMS28F800ST80CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS28F800ALYB70BDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE

1.27 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G44

3.6 V

2.625 mm

13.3 mm

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

28.2 mm

70 ns

3

TMS28F800AZT-70BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

60 mA

1048576 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

1MX8

1M

0 Cel

1,2,1,7

YES

DUAL

R-PDSO-G48

5.5 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

TOP

8388608 bit

4.5 V

10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

.000008 Amp

18.4 mm

70 ns

3

NO

TMS28F040-10C3DDL4

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

512KX8

512K

0 Cel

16

YES

DUAL

R-PDSO-G40

1000 Write/Erase Cycles

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

100 ns

YES

TMS29F259-250JL

Texas Instruments

FLASH

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

15 mA

32768 words

5

NO

5

8

IN-LINE, WINDOW

DIP32,.6

Flash Memories

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

NO

DUAL

R-GDIP-T32

5.25 V

4.907 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

64

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.003 Amp

250 ns

5

YES

TMS28F210-12C4NL

Texas Instruments

FLASH

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

NO

5

16

IN-LINE

DIP40,.6

Flash Memories

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

YES

DUAL

R-PDIP-T40

5.5 V

5.08 mm

10000 Write/Erase Cycles

15.24 mm

Not Qualified

1048576 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

52.455 mm

120 ns

12

NO

TMS28F010B-15C4DUL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

YES

3-STATE

128KX8

128K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F210-17C2NL4

Texas Instruments

FLASH

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

NO

5

16

IN-LINE

DIP40,.6

Flash Memories

2.54 mm

70 Cel

64KX16

64K

0 Cel

YES

DUAL

R-PDIP-T40

5.5 V

5.08 mm

100 Write/Erase Cycles

15.24 mm

Not Qualified

1048576 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

52.455 mm

170 ns

12

NO

TMS29F512-150N

Texas Instruments

FLASH

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

PARALLEL

256K

65536 words

5

NO

5

8

IN-LINE

DIP32,.6

Flash Memories

2.54 mm

70 Cel

64KX8

64K

0 Cel

2

NO

DUAL

R-PDIP-T32

Not Qualified

524288 bit

128

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

150 ns

YES

TMS28F004AEB80BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

3

NO

3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

4194304 bit

2.7 V

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

150 ns

5

NO

TMS28F010-17C4DUL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

YES

128KX8

128K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

170 ns

12

NO

TMS28F010-15C3DDL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

128KX8

128K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

1000 Write/Erase Cycles

8 mm

Not Qualified

1048576 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F200BZT70CDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

5

NO

5

8

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

256KX8

256K

0 Cel

1,2,1,1

YES

DUAL

R-PDSO-G44

5.5 V

2.63 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

2097152 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0000012 Amp

28.2 mm

70 ns

12

NO

TMS28F800AVT70BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

2.7 V

10000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

100 ns

3

TMS28F004ASB80BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

3.3

NO

3.3/5

8

SMALL OUTLINE, THIN PROFILE

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10000 Write/Erase Cycles

10 mm

Not Qualified

BOTTOM

4194304 bit

3 V

USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

150 ns

5

NO

TMS28F400AMT60BDCJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

65 mA

262144 words

NO

3.3/5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G44

10000 Write/Erase Cycles

Not Qualified

TOP

4194304 bit

NOR TYPE

.000005 Amp

110 ns

NO

TMS28F512A-15C4DDL4

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

10000 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F008ALYT10BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G40

5.5 V

1.2 mm

10 mm

TOP

8388608 bit

4.5 V

TOP BOOT BLOCK

18.4 mm

100 ns

5

TMS28F800SZB-80CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

BOTTOM

8388608 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK

NOR TYPE

18.4 mm

80 ns

3

TMS28F800EB80CDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE

1.27 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G44

3.6 V

2.63 mm

13.3 mm

Not Qualified

BOTTOM

8388608 bit

2.7 V

CONFG AS 512K X 16; USER SELECTABLE 5V VCC; BOTTOM BOOT BLOCK

NOR TYPE

28.2 mm

120 ns

3

TMS29LF040-70C5DBWL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

60 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

8

YES

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

3 V

100000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

12.4 mm

70 ns

3

YES

TMS28F512-17C2DUL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

YES

64KX8

64K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

BULK ERASE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

170 ns

12

NO

TMS28F512A-15C3DUL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1-R

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

YES

3-STATE

64KX8

64K

0 Cel

YES

DUAL

R-PDSO-G32

5.5 V

1.2 mm

1000 Write/Erase Cycles

8 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

150 ns

12

NO

TMS28F800AVYB80BDCDL

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10 mm

BOTTOM

8388608 bit

2.7 V

BOTTOM BOOT BLOCK

18.4 mm

80 ns

3

TMS28F002AZB70BDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

5

NO

5

8

SMALL OUTLINE

SOP44,.63

Flash Memories

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

1,2,1,1

YES

DUAL

R-PDSO-G44

5.5 V

2.63 mm

10000 Write/Erase Cycles

13.3 mm

Not Qualified

BOTTOM

2097152 bit

4.5 V

BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

28.2 mm

70 ns

12

NO

TMS28F512A-17C3NL

Texas Instruments

FLASH

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

5

NO

5

8

IN-LINE

DIP32,.6

Flash Memories

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

YES

DUAL

R-PDIP-T32

5.5 V

5.08 mm

1000 Write/Erase Cycles

15.24 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

41.4 mm

170 ns

12

NO

TMS28F040-17C3DUL4

Texas Instruments

FLASH

COMMERCIAL

40

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

32K

40 mA

524288 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP40,.8,20

Flash Memories

.5 mm

70 Cel

YES

512KX8

512K

0 Cel

16

YES

DUAL

R-PDSO-G40

1000 Write/Erase Cycles

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

170 ns

YES

TMS28F010A-12C3NL

Texas Instruments

FLASH

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

131072 words

5

NO

5

8

IN-LINE

DIP32,.6

Flash Memories

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

YES

DUAL

R-PDIP-T32

5.5 V

5.08 mm

1000 Write/Erase Cycles

15.24 mm

Not Qualified

1048576 bit

4.5 V

1000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

41.4 mm

120 ns

12

NO

TMS28F400AST70CDBJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

524288 words

3.3

NO

3.3/5

8

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G44

3.6 V

2.63 mm

100000 Write/Erase Cycles

13.3 mm

Not Qualified

TOP

4194304 bit

3 V

CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

28.2 mm

130 ns

5

NO

TMS28F400AMT80BDCJL

Texas Instruments

FLASH

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K,8K,96K,128K

65 mA

262144 words

NO

3.3/5

16

SMALL OUTLINE

SOP44,.63

8

Flash Memories

1.27 mm

70 Cel

256KX16

256K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G44

10000 Write/Erase Cycles

Not Qualified

TOP

4194304 bit

NOR TYPE

.000005 Amp

150 ns

NO

TMS28F400AMB80CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3.3

NO

3.3/5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

100000 Write/Erase Cycles

12 mm

Not Qualified

BOTTOM

4194304 bit

3 V

ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000005 Amp

18.4 mm

150 ns

12

NO

TMS28F800LT12CDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

8388608 bit

3 V

CONFG AS 512K X 16; TOP BOOT BLOCK

NOR TYPE

18.4 mm

120 ns

3

TMS29LF040-90C5DDL

Texas Instruments

FLASH

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

64K

60 mA

524288 words

3.3

YES

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

Flash Memories

.5 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

8

YES

DUAL

R-PDSO-G32

3.6 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

4194304 bit

3 V

100000 PROGRAM/ERASE CYCLES

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.0001 Amp

18.415 mm

90 ns

3

YES

TMS28F400AET80BDCDL

Texas Instruments

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

MOS

GULL WING

PARALLEL

ASYNCHRONOUS

16K,8K,96K,128K

65 mA

262144 words

3

NO

3/5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

1,2,1,3

YES

DUAL

R-PDSO-G48

3.6 V

1.2 mm

10000 Write/Erase Cycles

12 mm

Not Qualified

TOP

4194304 bit

2.7 V

ALSO OPERATES AT 5V SUPPLY; TOP BOOT BLOCK

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000008 Amp

18.4 mm

150 ns

5

NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.