COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F800AVYT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							18.4 mm	80 ns	3
TMS29F512-20DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	64KX8	64K					DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.5 V						NOR TYPE		18.415 mm	200 ns	5
TMS28F200AFB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	70 ns	5	NO
TMS28F008ALYT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							18.4 mm	80 ns	3
TMS28F800ASYT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							18.4 mm	80 ns	3
TMS28F512-12C4FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K		YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F800AZYT12BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							28.2 mm	120 ns	5
TMS28F008AVYT80CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	70 Cel			512KX16	512K					DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							28.2 mm	80 ns	3
TMS29LF008T-90BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	1MX8	1M	1,2,1,15	YES		YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	3	YES
TMS29F258-25JL	Texas Instruments	FLASH	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP28,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	32KX8	32K	512	NO			DUAL	R-GDIP-T28	5.5 V	4.907 mm		15.24 mm	Not Qualified		262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp		250 ns	5	YES
TMS29LF008T-120BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			1MX8	1M	1,2,1,15	YES		YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	120 ns	3	YES
TMS28F800AVYB10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm	100 ns	5
TMS28F010B-15C5FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	128KX8	128K		YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	150 ns	12	NO
TMS28F800LB12BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	GRID ARRAY					70 Cel			1MX8	1M					BOTTOM	R-PBGA-B48	3.6 V				Not Qualified	BOTTOM	8388608 bit	3 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE			120 ns	3
TMS28F200AFB60BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	60 ns	5	NO
TMS28F020-15C5DDL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K		YES			DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS29LF800T-90ELB	Texas Instruments	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			512KX16	512K	1,2,1,15	YES		YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles			TOP	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		90 ns		YES
TMS28F010-12C3FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			128KX8	128K		YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	12	NO
TMS28F200AST70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	3 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	130 ns	5	NO
TMS28F200ASB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	3 V	CAN BE CONFG AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS29VF040-10C5DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3	YES	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	8	YES			DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V	100000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	3	YES
TMS28F800ZB80BL	Texas Instruments	FLASH	COMMERCIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	GRID ARRAY					70 Cel			1MX8	1M					BOTTOM	R-PBGA-B48	5.5 V				Not Qualified	BOTTOM	8388608 bit	4.5 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE			80 ns	3
TMS28F040-12C2NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			512KX8	512K	16	YES			DUAL	R-PDIP-T32	5.5 V	5.08 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified		4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	YES
TMS28F008ASYB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK							18.4 mm	70 ns	3
TMS28F800ST70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	3 V	CONFG AS 512K X 16; USER SELECTABLE 5V VCC; TOP BOOT BLOCK					NOR TYPE		28.2 mm	100 ns	3
TMS29VF040-20C5DDL4	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	3.3	YES	3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	8	YES			DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	200 ns	3	YES
TMS28F004AFB60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K					DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP					NOR TYPE		28.2 mm	60 ns	5
TMS28F800ASYT12CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G44	5.5 V	2.625 mm		13.3 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							28.2 mm	120 ns	5
TMS29F040-90C5FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	512KX8	512K	8	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	5	YES
TMS28F512A-17C3FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	64KX8	64K		YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	1000 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	170 ns	12	NO
TMS28F200BZB90CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	CAN BE ORGANIZED AS 128K X 16; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0000012 Amp	28.2 mm	90 ns	12	NO
TMS28F800ALYT80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							28.2 mm	80 ns	3
TMS28F800VB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	CONFG AS 512K X 16; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm	120 ns	3
TMS28F010B-90C4FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	128KX8	128K		YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	10000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	90 ns	12	NO
TMS29LF008T-90DCDLB	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			1MX8	1M	1,2,1,15	YES		YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			TOP	8388608 bit					NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp		90 ns		YES
TMS29LF800T-90CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	1MX8	1M	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V	CAN ALSO BE CONFIGURED AS 512K X 16			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	90 ns	2.7	YES
TMS28F008ALYB12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK							18.4 mm	120 ns	5
TMS28F033-25BPAFL	Texas Instruments	FLASH	COMMERCIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5	NO	3.3/5,5	16	FLATPACK	QFP80,.7X.9,32	16	Flash Memories	.8 mm	70 Cel		3-STATE	256KX16	256K	7	YES		YES	QUAD	R-PQFP-G80	5.5 V	3.1 mm		14 mm	Not Qualified		4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 128K X 32			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		20 mm	29 ns	12	NO
TMS28F800AST-70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	60 mA	1048576 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			1MX8	1M	1,2,1,7	YES			DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK					NOR TYPE	.000008 Amp	28.2 mm	100 ns	3	NO
TMS28F512A-17C3DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	64KX8	64K		YES			DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	NO
TMS28F002AMB60CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	3 V	CAN BE OPERATED AT 5V; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	110 ns	12	NO
TMS28F800AVT-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 512K X 16; TOP BOOT BLOCK					NOR TYPE		18.4 mm	80 ns	3
TMS29F400B-80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,7	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	CAN ALSO BE CONFIGURED AS 256K X 16			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	YES
TMS28F002AFB60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES			DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	60 ns	5	NO
TMS28F008ASYT12CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK							18.4 mm	120 ns	5
TMS28F010A-12C3DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES	3-STATE	128KX8	128K		YES			DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	1000 PROGRAM/ERASE CYCLES			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS29F002B70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP40,.79		Flash Memories	.5 mm	70 Cel			256KX8	256K	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm	70 ns	5	YES
TMS28F010-12C3NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			128KX8	128K		YES			DUAL	R-PDIP-T32	5.5 V	5.08 mm	1000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.