COMMERCIAL Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TMS28F010A-12C4DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES	3-STATE	128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	10000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	120 ns	12	NO
TMS28F010-10C4DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES		128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO
TMS29F512-120DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		3-STATE	64KX8	64K				DUAL	R-PDSO-G32	5.25 V	1.2 mm		8 mm	Not Qualified		524288 bit	4.75 V					NOR TYPE		18.415 mm	120 ns	5
TMS28F040-10C3DUL4	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel	YES		512KX8	512K	16	YES		DUAL	R-PDSO-G40			1000 Write/Erase Cycles				4194304 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp		100 ns		YES
TMS28F040-17C4DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel			512KX8	512K	16	YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V	BULK ERASE; BLOCK ERASE; BYTE PROGRAMMABLE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	170 ns	12	YES
TMS29F010-12C5FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	128KX8	128K	8	YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	120 ns	5	YES
TMS29F256-25NL	Texas Instruments	FLASH	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	15 mA	32768 words	5	NO	5	8	IN-LINE	DIP28,.6		Flash Memories	2.54 mm	70 Cel		3-STATE	32KX8	32K	512	NO		DUAL	R-PDIP-T28	5.5 V	5.08 mm		15.24 mm	Not Qualified		262144 bit	4.5 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	36.32 mm	250 ns	5	YES
TMS28F008ASYB10BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm	100 ns	5
TMS28F004AFB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	512KX8	512K				DUAL	R-PDSO-G44	5.5 V	2.63 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP				NOR TYPE		28.2 mm	70 ns	5
TMS28F002AMT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	2097152 bit	3 V	CAN BE OPERATED AT 5V; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	130 ns	12	NO
TMS28F800ASYT70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						18.4 mm	70 ns	3
TMS29F400B-80BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,7	YES	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	YES
TMS28F020-15C4DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.8		Flash Memories	.5 mm	70 Cel		3-STATE	256KX8	256K		YES		TRIPLE	R-PTSO-G32	5.5 V	1.2 mm	10000 Write/Erase Cycles	8 mm	Not Qualified		2097152 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F002AZT70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	5.5 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	70 ns	12	NO
TMS28F800AVB10CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	524288 words		NO	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			512KX16	512K	1,2,1,7	YES		DUAL	R-PDSO-G44			100000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp		100 ns		NO
TMS29LF800B-120BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			512KX16	512K	1,2,1,15	YES	YES	DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	28.2 mm	120 ns	2.7	YES
TMS28F800AVT-120CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS28F400ASB70BDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	256KX16	256K	1,2,1,3	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm	10000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	ALSO OPERATES AT 5V SUPPLY; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	130 ns	5	NO
TMS28F008ASYT70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						18.4 mm	70 ns	3
TMS28F200AET60BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3	NO	3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	110 ns	5	NO
TMS28F200ASB70BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	10000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	3 V	10000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	130 ns	5	NO
TMS28F800ASYT70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						28.2 mm	70 ns	3
TMS28F008SEB-12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; TTL COMPATIBLE I/O; BOTTOM BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS28F400AFT80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	CAN BE CONFG AS 256K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	80 ns	5	NO
TMS28F010-12C4NL4	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			128KX8	128K		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	120 ns	12	NO
TMS28F1600T80CDCDL	Texas Instruments	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	1048576 words	3	NO	3/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			1MX16	1M	1,2,1,15	YES		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	2.7 V	ALSO REQUIRES 5V VCC FOR NORMAL OPERATION; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	18.4 mm	80 ns	3	NO
TMS28F200AST60CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	262144 words	3.3	NO	3.3/5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel		3-STATE	256KX8	256K	1,2,1,1	YES		DUAL	R-PDSO-G44	3.6 V	2.63 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	2097152 bit	3 V	100000 PROGRAM/ERASE CYCLES; CONFG AS 128K X 16; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	28.2 mm	110 ns	5	NO
TMS28F008ZT70BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm	70 ns	3
TMS28F008AVYB12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK						18.4 mm	120 ns	5
TMS28F210-10C3FNL	Texas Instruments	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	1.27 mm	70 Cel		3-STATE	64KX16	64K		YES		QUAD	S-PQCC-J44	5.5 V	4.57 mm	1000 Write/Erase Cycles	16.5862 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	16.5862 mm	100 ns	12	NO
TMS28F800VT10CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		28.2 mm	100 ns	3
TMS28F008AEYT80BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			16	SMALL OUTLINE				1.27 mm	70 Cel			512KX16	512K				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						28.2 mm	80 ns	3
TMS28F800AVYB70CDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.625 mm		13.3 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						28.2 mm	70 ns	3
TMS29F040-60C5DUL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel	YES	3-STATE	512KX8	512K	8	YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	60 ns	5	YES
TMS28F512-10C2FML4	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel			64KX8	64K		YES		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100 Write/Erase Cycles	11.43 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm	100 ns	12	NO
TMS28F800ALYT80BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK						18.4 mm	80 ns	3
TMS29F259-250FML	Texas Instruments	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		3-STATE	32KX8	32K		NO		QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.43 mm	Not Qualified		262144 bit	4.75 V		64	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.003 Amp	13.97 mm	250 ns	5	YES
TMS28F800AEYB70CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK						18.4 mm	70 ns	3
TMS28F512-17C4NL	Texas Instruments	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel			64KX8	64K		YES		DUAL	R-PDIP-T32	5.5 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified		524288 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	41.4 mm	170 ns	12	NO
TMS28F004AFT60BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER-SELECTABLE 5V OR 12 V VPP; TOP BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	60 ns	5	NO
TMS28F400BZT-6CDBRL	Texas Instruments	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	16	Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G56	5.25 V	1.2 mm	100000 Write/Erase Cycles	14 mm	Not Qualified	TOP	4194304 bit	4.75 V	DEEP POWER-DOWN				NOR TYPE	.0000012 Amp	18.4 mm	60 ns	12	NO
TMS28F800ALB12BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	70 Cel			512KX16	512K	1,2,1,7	YES		DUAL	R-PDSO-G44			10000 Write/Erase Cycles		Not Qualified	BOTTOM	8388608 bit				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp		120 ns		NO
TMS28F008VT12BDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK				NOR TYPE		18.4 mm	120 ns	3
TMS28F512A-15C3DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	64KX8	64K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	1000 Write/Erase Cycles	8 mm	Not Qualified		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	150 ns	12	NO
TMS28F210-12C4DBWL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories	.5 mm	70 Cel		3-STATE	64KX16	64K		YES		DUAL	R-PDSO-G40	5.5 V	1.2 mm	10000 Write/Erase Cycles	10 mm	Not Qualified		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	12.4 mm	120 ns	12	NO
TMS28F004ASB80CDCDL	Texas Instruments	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	65 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories	.5 mm	70 Cel		3-STATE	512KX8	512K	1,2,1,3	YES		DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	4194304 bit	3 V	USER-SELECTABLE 5V OR 12 V VPP; BOTTOM BOOT BLOCK		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000008 Amp	18.4 mm	150 ns	5	NO
TMS28F800AVT-120BDBJL	Texas Instruments	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE				1.27 mm	70 Cel			1MX8	1M				DUAL	R-PDSO-G44	3.6 V	2.63 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	10000 PROGRAM/ERASE CYCLES; USER CONFG AS 512K X 16; TOP BOOT BLOCK				NOR TYPE		28.2 mm	120 ns	3
TMS28F010-10C2DDL	Texas Instruments	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel			128KX8	128K		YES		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100 Write/Erase Cycles	8 mm	Not Qualified		1048576 bit	4.5 V	BULK ERASE		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.415 mm	100 ns	12	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.