COMMERCIAL EXTENDED Flash Memory 166

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8Q2815UQB-PE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00006 Amp		YES	60 ns	2.7	YES
KFK8G16Q2M-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	35 mA	536870912 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63	3	1.95 V	1.4 mm	10 mm	Not Qualified		8589934592 bit	1.7 V		2K			260	SLC NAND TYPE	.0001 Amp	13 mm		76 ns	1.8	NO
K8P2915UQB-DE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V			Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
KFG1G16Q2B-DEB60	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm	10 mm	Not Qualified		1073741824 bit	1.7 V		1K			260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8P6415UQB-EE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		13 mm		55 ns	2.7
K8P2815UQB-DE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8A3215ETE-DE7B	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				85 Cel	2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V			Not Qualified		33554432 bit	1.7 V			e1		260					90 ns	1.8
K8P2815UQB-DE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8P5615UQA-FE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	84	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA84,10X12,32	Flash Memories	.8 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B84	3	3.6 V			Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V					240	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8Q2815UQB-PE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8A3215ETE-DE7C	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY				85 Cel	2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	3	1.95 V			Not Qualified		33554432 bit	1.7 V			e1		260					80 ns	1.8
K8P2815UQB-DE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA80,8X12,32	Flash Memories	1 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.3 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	55 ns	2.7	YES
K8P2915UQB-DE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V			Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00003 Amp		YES	55 ns	2.7	YES
KFG2G16Q2M-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	45 mA	131072 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128KX16	128K	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm	10 mm	Not Qualified		2097152 bit	1.7 V		1K	e1		260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8P3215UQB-PE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories	.5 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	2.7	YES
K8P1615UQB-PE4C000	Samsung	FLASH	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel	1MX16	1M	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM/TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		65 ns	2.7
K8P3215UQB-DE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	8 mm	YES	60 ns	2.7	YES
KFN4G16Q2M-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	35 mA	268435456 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1.2 mm	10 mm	Not Qualified		4294967296 bit	1.7 V		1K	e1		260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8P6415UQB-DE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		8 mm		55 ns	2.7
KFM1G16Q2B-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm	10 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	1K	e1		260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8P3215UQB-PE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories	.5 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	60 ns	2.7	YES
KFG1216Q2B-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm	9.5 mm	Not Qualified		536870912 bit	1.7 V		1K	e1		260	SLC NAND TYPE	.00005 Amp	12 mm		76 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.