Atmel Flash Memory 110

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT29C010A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	1,1,1	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0003 Amp	42.037 mm		120 ns	5	YES
AT29C010A-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	Tin/Lead (Sn/Pb)		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.75 V			e0	30	225	NOR TYPE	.00003 Amp	13.97 mm		70 ns	5	YES
AT29C040A-90TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-40 Cel	2K	NO	MATTE TIN		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e3		260	NOR TYPE	.0003 Amp	18.4 mm		90 ns	5	YES
AT45DB021D-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		2097152 bit	2.7 V						NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB021D-SU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		20 mA	2097152 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		2MX1	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		2097152 bit	2.7 V						NOR TYPE	.00001 Amp	5.29 mm			2.7
AT45DB321D-CU	Atmel	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			33554432 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		BOTTOM		R-PBGA-B24		3.6 V	1.4 mm		66 MHz	6 mm	Not Qualified				33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3					8 mm			2.7
AT45DB321D-MWU	Atmel	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		33554432 bit	2.7 V	ORGANIZED AS 8192 PAGES OF 528 BYTES EACH		e3			NOR TYPE	.00001 Amp	8 mm			2.7
AT49BV802D-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.65 V		4/8	e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT29C256-12PI	Atmel	FLASH	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified	10 ms			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0			NOR TYPE	.0003 Amp	36.95 mm		120 ns	5	YES
AT45DB041D-SSU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	66 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH		e3			NOR TYPE	.00001 Amp	4.925 mm			2.7
AT45DB041D-SU-SL955	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	66 MHz	5.24 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 256 BYTES EACH		e3			NOR TYPE	.00001 Amp	5.29 mm			2.7
AT29C040A-12PI	Atmel	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	2K	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0003 Amp	42.037 mm		120 ns	5	YES
AT49F1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
AT49BV162A-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.65 V			e0			NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT29LV020-10TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	15 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1K	NO	Matte Tin (Sn)		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified	20 ms		BOTTOM/TOP	2097152 bit	3 V			e3	30	260	NOR TYPE	.00005 Amp	18.4 mm		100 ns	3	YES
AT29C020-12JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1K	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm		120 ns	5	YES
AT29C040A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0			NOR TYPE	.0001 Amp	42.037 mm		120 ns	5	YES
AT29C040A-90JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	2K	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		225	NOR TYPE	.0003 Amp	13.97 mm		90 ns	5	YES
AT29C1024-70JI	Atmel	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		NO	TIN LEAD		QUAD		S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms			1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
AT29C256-12JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	Tin/Lead (Sn/Pb)		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0	12	225	NOR TYPE	.0003 Amp	13.97 mm		120 ns	5	YES
AT29C256-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	Tin/Lead (Sn/Pb)		QUAD		R-PQCC-J32	2	5.5 V	3.56 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			262144 bit	4.5 V	HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE	64	e0	30	225	NOR TYPE	.0003 Amp	13.97 mm		90 ns	5	YES
AT29C512-70JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		64KX8	64K	-40 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			524288 bit	4.75 V		128	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT45DB081B-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		35 mA	1081344 words	3		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories		.55 mm	70 Cel		1081344X8	1081344	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm		20 MHz	8 mm	Not Qualified		SPI		8650752 bit	2.7 V	ORGANIZED AS 4096 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	11.8 mm			2.7
AT45DCB008D	Atmel	FLASH CARD	INDUSTRIAL	7	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			8388608 words	3			8	UNCASED CHIP						85 Cel		8MX8	8M	-40 Cel					UPPER		X-XUUC-N7		3.6 V			66 MHz		Not Qualified				67108864 bit	2.7 V						NOR TYPE					2.7
AT49F002AT-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	25 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified			TOP	2097152 bit	4.5 V			e0		225	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
AT26DF161A-SSU	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		20 mA	16777216 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		16MX1	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	70 MHz	3.9 mm	Not Qualified		SPI		16777216 bit	2.7 V						NOR TYPE	.000015 Amp	4.925 mm			2.7
AT29C040A-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
AT29C1024-70JC	Atmel	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		60 mA	65536 words	5	YES	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		NO	TIN LEAD		QUAD		S-PQCC-J44	2	5.5 V	4.57 mm	10000 Write/Erase Cycles		16.5862 mm	Not Qualified	10 ms			1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0002 Amp	16.5862 mm		70 ns	5	YES
AT29LV010A-15JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	15 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		QUAD		R-PQCC-J32	2	3.6 V	3.56 mm			11.43 mm	Not Qualified	20 ms			1048576 bit	3 V			e0		225	NOR TYPE	.00004 Amp	13.97 mm		150 ns	3	YES
AT45DB041D-MU	Atmel	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		17 mA	4194304 words	3		3/3.3	1	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	100000 Write/Erase Cycles	66 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e3			NOR TYPE	.00001 Amp	6 mm			2.7
AT45DB642-TI	Atmel	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS			67108864 words	3			1	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64MX1	64M	-40 Cel			TIN LEAD		DUAL		R-PDSO-G40	3	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V	ORGANISED AS 8192 PAGES OF 1056 BYTES EACH		e0			NOR TYPE		18.4 mm			2.7
AT49F1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	80 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	CONFIGURABLE AS 2M X 8		e0			NOR TYPE	.003 Amp	18.4 mm		90 ns	5	YES
AT49LV002-90TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	50 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm			8 mm	Not Qualified			BOTTOM	2097152 bit	3 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm		90 ns	3	YES
AT25DF041A-SSHF-T	Atmel	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		14 mA	4194304 words	3		2.5/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		4MX1	4M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	50 MHz	3.9 mm	Not Qualified		SPI		4194304 bit	2.3 V			e4			NOR TYPE	.000015 Amp	4.925 mm			2.7
AT25DF641-MWH-Y	Atmel	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		19 mA	8388608 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		8MX8	8M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE	R-PDSO-N8		3.6 V	1 mm	1000000 Write/Erase Cycles	85 MHz	6 mm	Not Qualified	5 ms	SPI		67108864 bit	2.7 V			e4			NOR TYPE	.000005 Amp	8 mm			2.7
AT29BV010A-12JU	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	8K,112K,8K	15 mA	131072 words	3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		128KX8	128K	-40 Cel	1,1,1	NO	MATTE TIN		QUAD		R-PQCC-J32	2	3.6 V	3.556 mm			11.43 mm	Not Qualified	20 ms		BOTTOM/TOP	1048576 bit	2.7 V			e3		245	NOR TYPE	.00005 Amp	13.97 mm		120 ns	2.7	YES
AT29C010-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	128	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1K	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.59 mm			15.24 mm	Not Qualified				1048576 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm		120 ns	5	YES
AT29C010A-12PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8K,112K,8K	50 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	1,1,1	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	4.826 mm			15.24 mm	Not Qualified	10 ms		BOTTOM/TOP	1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	42.037 mm		120 ns	5	YES
AT29C010A-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel			TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.55 mm			11.43 mm	Not Qualified				1048576 bit	4.75 V			e0			NOR TYPE		13.97 mm		70 ns	5
AT29C020-70TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1K	NO	MATTE TIN		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	2097152 bit	4.5 V			e3		260	NOR TYPE	.0003 Amp	18.4 mm		70 ns	5	YES
AT29C040A-10TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256	40 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	2K	NO	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		BOTTOM/TOP	4194304 bit	4.5 V		256	e0		240	NOR TYPE	.0001 Amp	18.4 mm		100 ns	5	YES
AT29C256-25JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.55 mm			11.43 mm	Not Qualified				262144 bit	4.5 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		250 ns	5	YES
AT29C256-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm			11.43 mm	Not Qualified	10 ms			262144 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	64	e0		225	NOR TYPE	.0003 Amp	13.97 mm		70 ns	5	YES
AT29C257-70JCT/R	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel			TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.55 mm			11.43 mm	Not Qualified				262144 bit	4.75 V			e0			NOR TYPE		13.97 mm		70 ns	5
AT29C512-70JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	128	50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	512	NO	TIN LEAD		QUAD		R-PQCC-J32	2	5.25 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms			524288 bit	4.75 V	AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION	128	e0		225	NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
AT29LV512-12TU	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128	15 mA	65536 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel		64KX8	64K	-40 Cel	512	NO	MATTE TIN		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	20 ms			524288 bit	3 V		128	e3		260	NOR TYPE	.00005 Amp	18.4 mm		120 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.