Atmel Flash Memory 110

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
AT45DB041B-SC-2.5	Atmel	FLASH	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	4194304 words	2.7		2.7/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	1.27 mm	70 Cel		4MX1	4M	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	2.16 mm	15 MHz	5.24 mm	Not Qualified	SPI		4194304 bit	2.5 V	ORGANIZED AS 2048 PAGES OF 264 BYTES EACH		e0		240	NOR TYPE	.00001 Amp	5.29 mm			2.7
AT45DB321C-TC	Atmel	FLASH	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		Flash Memories	.55 mm	70 Cel		32MX1	32M	0 Cel			TIN LEAD		DUAL	HARDWARE	R-PDSO-G28	3	3.6 V	1.2 mm	40 MHz	8 mm	Not Qualified	SPI		33554432 bit	2.7 V	ORGANISED AS 8192 PAGES OF 528 BYTES EACH		e0			NOR TYPE	.000015 Amp	11.8 mm			2.7
AT45DCB002	Atmel	FLASH CARD	INDUSTRIAL	7		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			16777216 words	3			1	MICROELECTRONIC ASSEMBLY					85 Cel		16MX1	16M	-40 Cel					UNSPECIFIED		X-XXMA-X7		3.6 V		20 MHz		Not Qualified			16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED						2.7
AT49BV020-12TC	Atmel	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,248K	50 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	70 Cel		256KX8	256K	0 Cel	1,1	YES	TIN LEAD		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		8 mm	Not Qualified		BOTTOM	2097152 bit	2.7 V			e0		240	NOR TYPE	.00005 Amp	18.4 mm		120 ns	2.7	YES
AT49BV1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES
AT49BV322AT-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	2.7	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	33554432 bit	2.65 V	TOP/BOTTOM BOOT BLOCK		e0	30	240	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT49BV322DT-70CU	Atmel	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		7 mm	Not Qualified		TOP	33554432 bit	2.65 V			e1		260	NOR TYPE	.000025 Amp	10 mm	YES	70 ns	3	YES
AT49BV802DT-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	8388608 bit	2.65 V		4/8	e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT49BV8192A-11CI	Atmel	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,992K	50 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	8	Flash Memories	.75 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1	YES	TIN LEAD		BOTTOM		S-PBGA-B48		3.6 V	1.25 mm		7 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.00005 Amp	7 mm		110 ns	3	YES
AT49F002N-55JI	Atmel	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	TIN LEAD		QUAD		R-PQCC-J32	2	5.5 V	3.55 mm		11.43 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V			e0		225	NOR TYPE	.0003 Amp	13.97 mm		55 ns	5	YES
AT49F002NT-90PC	Atmel	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	90 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories	2.54 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL		R-PDIP-T32	1	5.5 V	5.59 mm		15.24 mm	Not Qualified		TOP	2097152 bit	4.5 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.0001 Amp	42.05 mm		90 ns	5	YES
AT49F040-12TI	Atmel	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,496K	90 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	1,1	YES	TIN LEAD		DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES		e0		240	NOR TYPE	.0003 Amp	18.4 mm		120 ns	5	YES
AT49LV001-90JC	Atmel	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	50 mA	131072 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories	1.27 mm	70 Cel		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD		QUAD		R-PQCC-J32	2	3.6 V	3.556 mm		11.43 mm	Not Qualified		BOTTOM	1048576 bit	3 V			e0		225	NOR TYPE	.00005 Amp	13.97 mm		90 ns	3	YES
AT49LV1614-90TC	Atmel	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		1MX16	1M	0 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	3 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.