Cypress Semiconductor Flash Memory 119

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S34ML02G100TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S34ML01G200TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S29WS128P0SBFW000	Cypress Semiconductor	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-25 Cel	8,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S34ML01G100TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S25FL128P0XMFI001	Cypress Semiconductor	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel	16MX8	16M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	104 MHz	7.5 mm	Not Qualified	SPI		134217728 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	10.3 mm			3
S34ML01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S25FL032P0XMFI011	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	4KX16	4K	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-N8		3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified	SPI		65536 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	5.283 mm			3
S34ML02G200TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S34ML16G202BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel	2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			9 mm				17179869184 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S29GL512P11FFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S34ML04G100TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
AM29F400BT-90EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel	256KX16	256K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE		18.4 mm		90 ns	5
S34MS16G202BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH		4			.8 mm	85 Cel	2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63	3	1.95 V	1.2 mm			9 mm				17179869184 bit	1.7 V					260	SLC NAND TYPE		11 mm			1.8
S29GL512P10TFIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			536870912 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S34ML02G100TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S29GL01GP11TFIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	1GX1	1G	-40 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			1073741824 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S34MS01G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm				1073741824 bit	1.7 V					260	SLC NAND TYPE		11 mm			1.8
S34ML02G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S25FL128P0XNFI001	Cypress Semiconductor	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		26 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel	16MX8	16M	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3	3.6 V	.85 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V			e3	40	260	NOR TYPE	.00002 Amp	8 mm			3
S29GL064N90TFI060	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V		8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S34ML02G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
AM29F400BB-70EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel	256KX16	256K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		70 ns	5
S34ML02G104TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		1K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S29GL512P11TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			536870912 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
AM29F400BT-90EI	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel	256KX16	256K	-40 Cel			TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE		18.4 mm		90 ns	5
AM29F400BT-90SI	Cypress Semiconductor	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel	256KX16	256K	-40 Cel			TIN LEAD		DUAL		R-PDSO-G44		5.5 V	2.8 mm			13.3 mm			TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE		28.2 mm		90 ns	5
S34ML04G200TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S29PL127J70BAI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1 mm			8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34ML08G201TFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	1GX8	1G	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			8589934592 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm			3	NO
S29GL01GP11FFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	1GX1	1G	-40 Cel	1K	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			1073741824 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
AM29F400BB-90EF	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel	256KX16	256K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		90 ns	5
S25FL032P0XMFI013	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	4KX16	4K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified	SPI		65536 bit	2.7 V			e3			NOR TYPE	.00001 Amp	5.283 mm			3
S34ML04G100TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S25FL032P0XMFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	8	SON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		38 mA	4096 words	3		3/3.3	16	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	4KX16	4K	-40 Cel			Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	3	3.6 V	2.159 mm	100000 Write/Erase Cycles	104 MHz	5.283 mm	Not Qualified	SPI		65536 bit	2.7 V			e3	40	260	NOR TYPE	.00001 Amp	5.283 mm			3
S29GL512P10FFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			536870912 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL512P11TFI020	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			536870912 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29AL004D70TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel	256KX16	256K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			TOP	4194304 bit	2.7 V	ALSO CONFIGURABLE AS 512K X 8; TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		70 ns	3
S34MS01G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,8X12,32		Flash Memories		.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO
S29GL512P10TFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified			536870912 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S40410081B1B1W000	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel	8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410161B1B1W010	Cypress Semiconductor	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel	16GX8	16G	-25 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410081B1B1I000	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V						MLC NAND TYPE		13 mm			3
S40410081B1B1I003	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				68719476736 bit	2.7 V								13 mm			3
S40410081B1B2I000	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V						MLC NAND TYPE		18 mm			3
S40410081B1B2I003	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel	8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V								18 mm			3
S40410081B1B2W000	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel	8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V						MLC NAND TYPE		18 mm			3
S40410081B1B2W003	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel	8GX8	8G	-25 Cel					BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			14 mm				68719476736 bit	2.7 V								18 mm			3
S40410161B1B1I010	Cypress Semiconductor	FLASH	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		4			.5 mm	85 Cel	16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	1 mm			11.5 mm				137438953472 bit	2.7 V						MLC NAND TYPE		13 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.