Cypress Semiconductor Flash Memory 119

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29AL004D70TFI020	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	256KX16	256K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm		BOTTOM	4194304 bit	2.7 V	ALSO CONFIGURABLE AS 512K X 8; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		70 ns	3
S29AL008D55TFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	512KX16	512K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3	40	260			18.4 mm		55 ns	3
S29AL008D70TFI010	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	512KX16	512K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e3	40	260			18.4 mm		70 ns	3
S29AL008J70BFA020	Cypress Semiconductor	FLASH	INDUSTRIAL	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY		8			85 Cel	512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V					8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED					70 ns	3
S29AL032D90BFI040	Cypress Semiconductor	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6 mm		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE		10 mm		90 ns	3
S29GL01GP11FAIR10	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	1GX1	1G	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	3 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL01GP13TFIV10	Cypress Semiconductor	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	1073741824 words	3	YES	1.8/3.3,3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel	1GX1	1G	-40 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified		1073741824 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	130 ns	3	YES
S29GL032A11TFIR20	Cypress Semiconductor	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	2MX16	2M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm			33554432 bit	3 V			e3	40	260	NOR TYPE		18.4 mm		110 ns	3
S29GL032A11TFIR40	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel	2MX16	2M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		BOTTOM	33554432 bit	3 V			e3	40	260	NOR TYPE		18.4 mm		110 ns	3
S29GL064A11FFIR40	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm		BOTTOM	67108864 bit	3 V			e1	40	260	NOR TYPE		13 mm		110 ns	3
S29GL064N90TAI060	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	14 mm	Not Qualified		67108864 bit	2.7 V		8	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL512P10FFCR10	Cypress Semiconductor	FLASH	OTHER	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3.3	YES	3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	512MX1	512M	0 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	3 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S29GL512P11FAI022	Cypress Semiconductor	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	110 mA	536870912 words	3	YES	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	512MX1	512M	-40 Cel	512	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V		8/16	e0			NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29PL064J60BFI120	Cypress Semiconductor	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S29PL127J60TFI130	Cypress Semiconductor	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL127J70BFI000	Cypress Semiconductor	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S34ML01G100BHI003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3	3.6 V	1 mm	9 mm	Not Qualified		1073741824 bit	2.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML02G100TFB000	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	105 Cel	256MX8	256M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm			2147483648 bit	2.7 V			e3		260	SLC NAND TYPE		18.4 mm			3
S34ML04G100BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories	.8 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	3.6 V	1 mm	9 mm	Not Qualified		4294967296 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	3	NO
S34ML04G104BHV010	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	105 Cel	256MX16	256M	-40 Cel					BOTTOM	R-PBGA-B63	3	3.6 V	1 mm	9 mm			4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S34ML04G200BHV003	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	105 Cel	512MX8	512M	-40 Cel					BOTTOM	R-PBGA-B63	3	3.6 V	1 mm	9 mm			4294967296 bit	2.7 V					260	SLC NAND TYPE		11 mm			3
S34ML04G200TFI003	Cypress Semiconductor	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified		4294967296 bit	2.7 V		2K	e3		260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3	NO
S34MS04G200BHI000	Cypress Semiconductor	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories	.8 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm	9 mm	Not Qualified		4294967296 bit	1.7 V		2K			260	SLC NAND TYPE	.00005 Amp	11 mm		45 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.