Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CD016J0JQFM110	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	Matte Tin (Sn)	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL032J0MBAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	3 V			e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29GL01GT11FHB013	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM/TOP	1073741824 bit	2.7 V	CAN ALSO ORGANISED AS 1GX1					NOR TYPE		13 mm		110 ns	2.7
S29GL512T13TFB033	Infineon Technologies	FLASH
S29CD016J1JBAI103	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			TOP	16777216 bit	2.5 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29WS064J0PBFW022	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	54 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3						Not Qualified			BOTTOM/TOP	67108864 bit				e1	40	260	NOR TYPE	.00005 Amp		YES	55 ns		YES
S29GL512T13FHBV30	Infineon Technologies	FLASH
S29GL01GT11DHNV20	Infineon Technologies	FLASH
S29CD016J0MFFM130	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL128P13FAIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V			e0			NOR TYPE		13 mm		110 ns	3
S29WS064J0SBAW020	Infineon Technologies	FLASH	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	60 mA	4194304 words		YES	1.5,1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM		R-PBGA-B80							Not Qualified			BOTTOM/TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	45 ns		YES
S29GL512T13TFVV33	Infineon Technologies	FLASH
S29GL064N11TFAV73	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		110 ns	3
S29CL032J0RFAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	3.3	YES
S28HS01GTFPBHM010	Infineon Technologies	FLASH
S26HL256TFPBHI013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	640000 Write/Erase Cycles	166 MHz	6 mm			SPI		268435456 bit	2.7 V						NOR TYPE		8 mm			3
S29CD032J0JFAI113	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	2.7
S29GL512T12GHI030	Infineon Technologies	FLASH
S29WS064R0PBHW013	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM		R-PBGA-B84		1.95 V	1 mm			8 mm	Not Qualified			BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00007 Amp	11.6 mm	YES	80 ns	1.8	YES
S29CD016J0MQFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	BGA80,8X10,40		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL064N11FFAV22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		13 mm		110 ns	3
S26HS01GTFPBHA000	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V						NOR TYPE		8 mm			1.8
S29GL01GT13DHNV20	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm					1073741824 bit	2.7 V								9 mm		130 ns	2.7
S29CL032J0PQFM02	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		3.6 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							20 mm		54 ns	3.3
S26HS256TGABHI020	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm			SPI		268435456 bit	1.7 V						NOR TYPE		8 mm			1.8
S28HS256TGABHM0300	Infineon Technologies	FLASH																																																												1.8
S29GL512T13FHV013	Infineon Technologies	FLASH
S29CD016J0JQAI100	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD016J1JQAM123	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL128S13DHEV13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	130 ns	3	YES
S29XS032R0PBHW010	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		2MX16	2M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			5 mm				BOTTOM	33554432 bit	1.7 V	BOTTOM BOOT BLOCK							7.5 mm		80 ns	1.8
S29CL032J1MQAI122	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	3 V			e0			NOR TYPE		20 mm		54 ns	3.3
S29CD016J0JQFM103	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL128S12FAE020	Infineon Technologies	FLASH		64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		11 mm		.00006 ms			134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29WS256P0LBFW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	80 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	8,254	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B84	3	1.95 V	1 mm			8 mm	Not Qualified			BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	80 ns	1.8	YES
S29CL016J0PQAI012	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE		20 mm		54 ns	3.3
S28HL512TGABHI013	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40	1		25	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE		8 mm			3
S29GL512T12DHA040	Infineon Technologies	FLASH
S29CD032J0RFAM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	48 ns	2.7	YES
S29CD032J0JQFI130	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	2.7
S29CD032J1JFAI02	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm		40 MHz	11 mm	Not Qualified	.000065 ms		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL512T10DHN040	Infineon Technologies	FLASH
S29CL016J0MDGH014	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	UNCASED CHIP						145 Cel		512KX32	512K	-40 Cel					UPPER		R-XUUC-N74		3.6 V					Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK					NOR TYPE				54 ns	3.3
S29CD032J1JBAM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29XS128R0SBHI013	Infineon Technologies	FLASH	INDUSTRIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified			BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK							7.7 mm		80 ns	1.8
S29CD032J0MQAM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL128P12FAI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V			e0			NOR TYPE		13 mm		110 ns	3
S28HS256TFPBHM0103	Infineon Technologies	FLASH																																																												1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.