Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CD032J1JQAM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words		2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL016J0MFFI110	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words		3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S29GL064S90TFVV23	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words		3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel		8MX8	8M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		18.4 mm		90 ns	3
S28HL512TGABHV0100	Infineon Technologies	FLASH																																																										3
S29GL01GT11DHBV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words		3			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm		9 mm				1073741824 bit	2.7 V							9 mm		110 ns	2.7
S29CD016J0JBFI033	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words		2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		BOTTOM	16777216 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL016J0MQFI112	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words		3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK	e3			NOR TYPE		20 mm		54 ns	3.3
S28HL256TGABHM0333	Infineon Technologies	FLASH																																																										3
S29GL512T11TFB030	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	105 Cel		32MX16	32M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				536870912 bit	2.7 V	CAN ALSO BE ORGANISED AS 512MX1				NOR TYPE		18.4 mm		110 ns	2.7
S29CL016J0MFAI01	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words		3.3			32	GRID ARRAY					1 mm	85 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.4 mm	56 MHz	11 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						13 mm		54 ns	3.3
S29CD032J1JQAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words		2.6			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE		20 mm		54 ns	2.7
S29GL512T12DHBV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm		9 mm			BOTTOM/TOP	536870912 bit	2.7 V					NOR TYPE		9 mm		120 ns	2.7
S29GL512T12DHVV33	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words		3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm		9 mm			BOTTOM/TOP	536870912 bit	2.7 V					NOR TYPE		9 mm		120 ns	2.7
S29GL064N11TFAV22	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm			BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		18.4 mm		110 ns	3
S29CD016J1MQAI020	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words		2.6			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80		2.75 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK				NOR TYPE		20 mm		54 ns	2.7
S29CD016J0MQAI03	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words		2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm	56 MHz	14 mm	Not Qualified	.000065 ms	BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL032N90FAI22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		2MX16	2M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			33554432 bit	2.7 V		e0			NOR TYPE		13 mm		90 ns	3
S29CL016J0JFFM112	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words		3.3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK	e1			NOR TYPE		13 mm		54 ns	3.3
S29CL032J1JFAI000	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words		3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm		11 mm	Not Qualified		TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD032G0PQAN010	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		2K,16K	90 mA	1048576 words			YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3					Not Qualified		BOTTOM	33554432 bit			e0		260	NOR TYPE	.00006 Amp		YES	54 ns		YES
S29CL016J0MQAI013	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words		3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29GL01GT13TFA013	Infineon Technologies	FLASH
S29GL064S90FHVV23	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words		3			8	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		8MX8	8M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM/TOP	67108864 bit	2.7 V					NOR TYPE		13 mm		90 ns	3
S28HL01GTFPBHI010	Infineon Technologies	FLASH
S29GL01GT10TFA040	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX16	64M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V					NOR TYPE		18.4 mm		100 ns	2.7
S29GL01GT10TFB013	Infineon Technologies	FLASH
S28HS256TFPBHA0103	Infineon Technologies	FLASH																																																										1.8
S29CL016J0MQAM122	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words		3.3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	3 V		e0			NOR TYPE		20 mm		54 ns	3.3
S29GL01GT11TFBV40	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words		3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		1			.5 mm	105 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	2.7 V							18.4 mm		110 ns	2.7
S29GL032N90FFI32	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			33554432 bit	2.7 V		e1					13 mm		90 ns	3
S29CD016J0JDGH037	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words		2.6			32	UNCASED CHIP						145 Cel		512KX32	512K	-40 Cel					UPPER		R-XUUC-N74		2.75 V				Not Qualified		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK				NOR TYPE				54 ns	2.7
S29GL01GT10DHB040	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			134217728 words		3			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel		128MX8	128M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm		9 mm				1073741824 bit	2.7 V							9 mm		100 ns	2.7
S29CL016J1JQFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words		3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29WS256P0SBFW300	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			16777216 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm			BOTTOM/TOP	268435456 bit	1.7 V					NOR TYPE		11.6 mm		80 ns	1.8
S29CD032J0MQAI032	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words		2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm		14 mm	Not Qualified		BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK	e0			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL256P13FFIV22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words		3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	2.7 V		e1			NOR TYPE		13 mm		110 ns	3
S29GL512T11DHBV30	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words		3			8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel		64MX8	64M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm		9 mm				536870912 bit	2.7 V							9 mm		110 ns	2.7
S29GL256P13FFIV12	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words		3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		16MX16	16M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm		11 mm	Not Qualified			268435456 bit	2.7 V		e1			NOR TYPE		13 mm		110 ns	3
S29GL01GP11TFCR22	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			1073741824 words	COMMON	3.3	YES		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP56,.78,20			20	.5 mm	85 Cel	TOTEM POLE	1GX1	1G	0 Cel		YES		YES	DUAL	HARDWARE/SOFTWARE	R-PDSO-G56		3.6 V	1.2 mm		14 mm				1073741824 bit	3 V						.000005 Amp	18.4 mm		110 ns	3	YES
S29CD016J0PBAM123	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words		2.6			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		2.75 V	1.4 mm		9 mm				16777216 bit	2.5 V							11 mm		54 ns	2.7
S29CL032J0RQAM030	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words		3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm		14 mm	Not Qualified		BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK	e0		260	NOR TYPE	.00006 Amp	20 mm	YES	48 ns	3.3	YES
S29WS256R0PBHW200	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B84		1.95 V	1 mm		8 mm			TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE, TOP BOOT BLOCK				NOR TYPE		11.6 mm		80 ns	1.8
S28HS01GTGABHA013	Infineon Technologies	FLASH
S29CL016J0JDGH014	Infineon Technologies	FLASH	AUTOMOTIVE	74	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words		3.3			32	UNCASED CHIP						145 Cel		512KX32	512K	-40 Cel					UPPER		R-XUUC-N74		3.6 V				Not Qualified		BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK				NOR TYPE				54 ns	3.3
S29WS01GS0SWHW103	Infineon Technologies
S29NS01GS0SWHW103	Infineon Technologies
S29CD016J0JBAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words		2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm		9 mm	Not Qualified		TOP	16777216 bit	2.5 V					NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29WS064J1ABAI000	Infineon Technologies	FLASH	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K		4194304 words		1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA80,8X10,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM		R-PBGA-B80						Not Qualified		BOTTOM/TOP	67108864 bit						NOR TYPE	.00005 Amp		YES	45 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.