Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29XS128RAABHW301	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16X8	16	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified				128 bit	1.7 V								7.7 mm			1.8
S26HL01GTFPBHB030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
S29GL032M10FAIR4	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	60 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	4/8	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	100 ns	3	YES
S26HL01GTGABHM013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
S29CL032J0PQAI123	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		20 mm		54 ns	3.3
S26HL512TGABHB010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE		8 mm			3
S29GL512S110TFI023	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm		.00006 ms			536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29CL016J0JQAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	3.3	YES
S29CL032J0MBFM020	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29GL01GT11FHB023	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	105 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm					1073741824 bit	2.7 V	CAN ALSO ORGANISED AS 1GX1							13 mm		110 ns	2.7
S29CD032J0JFAI112	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	2.7
S29CD016J0JQAI012	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD032J0RQFI020	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	48 ns	2.7	YES
S29GL01GT13DHVV40	Infineon Technologies	FLASH
S28HS01GTFPBHA0300	Infineon Technologies	FLASH																																																												1.8
S29GL01GT12FHA033	Infineon Technologies	FLASH
S29WS01GS0PWHW320	Infineon Technologies	FLASH	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.65 mm	85 Cel		64MX16	64M	-25 Cel					BOTTOM		R-PBGA-B186		1.95 V	1.2 mm			11 mm	Not Qualified				1073741824 bit	1.7 V	SYNCHRONOUS BURST ACCESS ALSO POSSIBLE							13 mm		115 ns	1.8
S29CL032J0RQFI002	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3		FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.00006 Amp	20 mm	YES	48 ns	3.3	YES
S29GL01GT12DHI023	Infineon Technologies	FLASH
S29GL512T11TFN043	Infineon Technologies	FLASH
S29CL032J0PFFI032	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29GL128S12DHE023	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	125 Cel	3-STATE	8MX16	8M	-55 Cel	128	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100 Write/Erase Cycles		9 mm		.00006 ms			134217728 bit	2.7 V		16				NOR TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL01GS120DHIV10	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm		.00006 ms			1073741824 bit	2.7 V		32				NAND TYPE	.0001 Amp	9 mm	YES	120 ns	3	YES
S29CL032J0JBFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			BOTTOM	33554432 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CD016J0MBAI132	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	2.6			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm					16777216 bit	2.5 V								11 mm		54 ns	2.7
S26HS01GTFPBHV010	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm			SPI		1073741824 bit	1.7 V						NOR TYPE		8 mm			1.8
S29GL128P90FAI020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3			1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		128MX1	128M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
S29WS064R0SBHW000	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA84,10X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM		R-PBGA-B84		1.95 V	1 mm			8 mm	Not Qualified			TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00007 Amp	11.6 mm	YES	80 ns	1.8	YES
S29CD032J0JQFM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL032N90FAIR22	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		2MX16	2M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				33554432 bit	3 V			e0			NOR TYPE		13 mm		90 ns	3
S29CD016J0MFAI112	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29CD016J1JFFI130	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL512T13FHA023	Infineon Technologies	FLASH
S29CD032J0MQAI01	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm		56 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CD032J1JBFM000	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			TOP	33554432 bit	2.5 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S26HS512TFPBHA023	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	6 mm			SPI		536870912 bit	1.7 V						NOR TYPE		8 mm			1.8
S28HL256TFPBHV0103	Infineon Technologies	FLASH																																																												3
S29GL064N90TAIR10	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	3 V			e0			NOR TYPE		18.4 mm		90 ns	3
S29VS064R0PBHW003	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,32K	66 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	4,127	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm			5 mm	Not Qualified			TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00007 Amp	7.5 mm	YES	80 ns	1.8	YES
S29CD032J0JQAI010	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29CL016J0JQFI113	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S29GL512T11FHAV33	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		13 mm		110 ns	2.7
S29CL016J0MBFI013	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,32		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			BOTTOM	16777216 bit	3 V						NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29GL512S120TFIV10	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20			20	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm		.00006 ms			536870912 bit	2.7 V		32				NAND TYPE	.0001 Amp	18.4 mm	YES	120 ns	3	YES
FL116K0XNFI010	Infineon Technologies	FLASH
S29CD032J1JQFM020	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	MATTE TIN	YES	QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3	40	260	NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S26HL512TGABHM010	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	125 Cel	OPEN-DRAIN	64MX8	64M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		3.6 V	1 mm	1280000 Write/Erase Cycles	200 MHz	6 mm			SPI		536870912 bit	2.7 V						NOR TYPE		8 mm			3
S29GL032N11TAIV20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				33554432 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.