Infineon Technologies Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

S29CL032J1JQFI002

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

MATTE TIN

YES

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

TOP

33554432 bit

3 V

TOP BOOT BLOCK

e3

NOR TYPE

.00006 Amp

20 mm

YES

54 ns

3.3

YES

S29GL01GT13TFIV13

Infineon Technologies

FLASH

S29CD032J0RQFM000

Infineon Technologies

FLASH

AUTOMOTIVE

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

MATTE TIN

YES

QUAD

R-PQFP-G80

3

2.75 V

3.35 mm

14 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e3

40

260

NOR TYPE

.00006 Amp

20 mm

YES

48 ns

2.7

YES

S29CD032J0MQFI112

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

2.6

32

FLATPACK

.8 mm

85 Cel

1MX32

1M

-40 Cel

MATTE TIN

QUAD

R-PQFP-G80

3

2.75 V

3.35 mm

14 mm

Not Qualified

BOTTOM

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e3

NOR TYPE

20 mm

54 ns

2.7

S29GL512T10DHVV33

Infineon Technologies

FLASH

S29WS256RAABHW320

Infineon Technologies

FLASH

OTHER

84

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

R-PBGA-B84

1.95 V

1 mm

8 mm

TOP

268435456 bit

1.7 V

NOR TYPE

11.6 mm

80 ns

1.8

S29CD016J0JBAI132

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

524288 words

2.6

32

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512KX32

512K

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

16777216 bit

2.5 V

e0

11 mm

54 ns

2.7

S29GL256P10FAI013

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

128K

110 mA

268435456 words

3

YES

3/3.3

1

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

256MX1

256M

-40 Cel

256

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B64

3

3.6 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.7 V

8/16

e0

260

NOR TYPE

.000005 Amp

13 mm

YES

100 ns

3

YES

S28HS256TGABHI0300

Infineon Technologies

FLASH

1.8

S28HL01GTGABHA0300

Infineon Technologies

FLASH

3

S29CL032J0PBAM020

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

TOP

33554432 bit

3 V

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29CL016J0PQFI133

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

FLATPACK

.8 mm

85 Cel

512KX32

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e3

NOR TYPE

20 mm

54 ns

3.3

S29CD016J0PFAI00

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

66 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S26HS256TGABHB020

Infineon Technologies

FLASH

24

VBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

BALL

SERIAL

SYNCHRONOUS

33554432 words

1.8

8

GRID ARRAY, VERY THIN PROFILE

BGA24,5X5,40

25

1 mm

105 Cel

OPEN-DRAIN

32MX8

32M

-40 Cel

BOTTOM

HARDWARE

R-PBGA-B24

2 V

1 mm

640000 Write/Erase Cycles

200 MHz

6 mm

SPI

268435456 bit

1.7 V

NOR TYPE

8 mm

1.8

S29GL256P13TFIV23

Infineon Technologies

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16777216 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

85 Cel

16MX16

16M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G56

3

3.6 V

1.2 mm

14 mm

Not Qualified

268435456 bit

2.7 V

e3

NOR TYPE

18.4 mm

110 ns

3

S28HL256TFPBHV0300

Infineon Technologies

FLASH

3

S29GL064N90TFA070

Infineon Technologies

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

4MX16

4M

-40 Cel

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

BOTTOM/TOP

67108864 bit

2.7 V

NOR TYPE

18.4 mm

90 ns

3

S29CL016J0PFAM022

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

3.3

YES

S29CD032J0JFAI002

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CL016J0MFFM110

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

GRID ARRAY, LOW PROFILE

1 mm

125 Cel

512KX32

512K

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B80

3

3.6 V

1.4 mm

11 mm

Not Qualified

BOTTOM

16777216 bit

3 V

TOP BOOT BLOCK

e1

NOR TYPE

13 mm

54 ns

3.3

S29CD016J0MFAM03

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

56 MHz

11 mm

Not Qualified

.000065 ms

BOTTOM

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29GL128P10TFIV23

Infineon Technologies

FLASH

INDUSTRIAL

56

HTSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

134217728 words

3

1

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

128MX1

128M

-40 Cel

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

Not Qualified

134217728 bit

2.7 V

NOR TYPE

18.4 mm

100 ns

3

S29CD032J0RBAI022

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

9 mm

Not Qualified

TOP

33554432 bit

2.5 V

e0

NOR TYPE

.00006 Amp

11 mm

YES

48 ns

2.7

YES

S29CL032J0JBAI020

Infineon Technologies

FLASH

INDUSTRIAL

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B80

3.6 V

1.4 mm

9 mm

Not Qualified

TOP

33554432 bit

3 V

e0

NOR TYPE

.00006 Amp

11 mm

YES

54 ns

2.7

YES

S29GL512T12TFBV13

Infineon Technologies

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

33554432 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

105 Cel

32MX16

32M

-40 Cel

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

536870912 bit

2.7 V

NOR TYPE

18.4 mm

120 ns

2.7

S29WS01GS0PWHW103

Infineon Technologies

S29CD032J0JQAI123

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

2.6

32

FLATPACK

.8 mm

85 Cel

1MX32

1M

-40 Cel

TIN LEAD

QUAD

R-PQFP-G80

3

2.75 V

3.35 mm

14 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

20 mm

54 ns

2.7

S29CL016J0MQFI103

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

FLATPACK

.8 mm

85 Cel

512KX32

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

TOP

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e3

NOR TYPE

20 mm

54 ns

3.3

S26HL01GTFPBHV013

Infineon Technologies

FLASH

24

VBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

134217728 words

3

8

GRID ARRAY, VERY THIN PROFILE

BGA24,5X5,40

25

1 mm

105 Cel

OPEN-DRAIN

128MX8

128M

-40 Cel

BOTTOM

HARDWARE

S-PBGA-B24

3.6 V

1 mm

2560000 Write/Erase Cycles

166 MHz

8 mm

SPI

1073741824 bit

2.7 V

NOR TYPE

8 mm

3

S29CL032J0MQFI012

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

MATTE TIN

YES

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

BOTTOM

33554432 bit

3 V

BOTTOM BOOT BLOCK

e3

NOR TYPE

.00006 Amp

20 mm

YES

54 ns

3.3

YES

FL116K0XBHI020

Infineon Technologies

FLASH

S29GL256P11FFI012

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

128K

110 mA

268435456 words

3

YES

3/3.3

1

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

256MX1

256M

-40 Cel

256

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B64

3

3.6 V

1.4 mm

11 mm

Not Qualified

268435456 bit

2.7 V

8/16

e1

40

260

NOR TYPE

.000005 Amp

13 mm

YES

110 ns

3

YES

S29CL032J1MQAI030

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

32

FLATPACK

.8 mm

85 Cel

1MX32

1M

-40 Cel

TIN LEAD

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

NOR TYPE

20 mm

54 ns

3.3

S29GL032N90FFIR40

Infineon Technologies

FLASH

INDUSTRIAL

64

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

GRID ARRAY, LOW PROFILE

8

1 mm

85 Cel

2MX16

2M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B64

3

3.6 V

1.4 mm

11 mm

Not Qualified

BOTTOM

33554432 bit

3 V

e1

NOR TYPE

13 mm

90 ns

3

S29CD032G0JQAI012

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

2K,16K

90 mA

1048576 words

YES

1.8/2.6,2.6

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN LEAD

YES

QUAD

R-PQFP-G80

3

Not Qualified

BOTTOM

33554432 bit

e0

260

NOR TYPE

.00006 Amp

YES

67 ns

YES

S29CL016J0JQFI122

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

FLATPACK

.8 mm

85 Cel

512KX32

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

TOP

16777216 bit

3 V

e3

NOR TYPE

20 mm

54 ns

3.3

S29GL512T13FHIV13

Infineon Technologies

FLASH

S29CL032J1JQAI020

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

3.3

YES

1.8/3.3,3.3

32

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

85 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN LEAD

YES

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

TOP

33554432 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e0

260

NOR TYPE

.00006 Amp

20 mm

YES

54 ns

3.3

YES

S29GL512S120DHIV20

Infineon Technologies

FLASH

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

128K

100 mA

67108864 words

3

YES

8

GRID ARRAY, LOW PROFILE

BGA64,8X8,40

20

1 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

512

YES

YES

BOTTOM

S-PBGA-B64

3.6 V

1.4 mm

100000 Write/Erase Cycles

9 mm

.00006 ms

536870912 bit

2.7 V

32

NAND TYPE

.0001 Amp

9 mm

YES

120 ns

3

YES

S29CD016J0JQAI11

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

85 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

QUAD

R-PQFP-G80

2.75 V

3.35 mm

40 MHz

14 mm

Not Qualified

.000065 ms

BOTTOM

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

.00006 Amp

20 mm

YES

54 ns

2.7

YES

S29CD016J0JQFM122

Infineon Technologies

FLASH

AUTOMOTIVE

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

FLATPACK

QFP80,.7X.9,32

Flash Memories

.8 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

MATTE TIN

YES

QUAD

R-PQFP-G80

3

2.75 V

3.35 mm

14 mm

Not Qualified

TOP

16777216 bit

2.5 V

e3

NOR TYPE

.00006 Amp

20 mm

YES

54 ns

2.7

YES

S29GL064N90TFI30

Infineon Technologies

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

85 Cel

4MX16

4M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

67108864 bit

2.7 V

e3

18.4 mm

90 ns

3

S29CD032J1JFFM023

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

1048576 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY, LOW PROFILE

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

1MX32

1M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B80

3

2.75 V

1.4 mm

11 mm

Not Qualified

TOP

33554432 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK

e1

40

260

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29CD016J0MFFM12

Infineon Technologies

FLASH

AUTOMOTIVE

80

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

2K,16K

90 mA

524288 words

2.6

YES

1.8/2.6,2.6

32

GRID ARRAY

BGA80,8X10,40

Flash Memories

1 mm

125 Cel

512KX32

512K

-40 Cel

16,30

YES

YES

BOTTOM

R-PBGA-B80

2.75 V

1.4 mm

56 MHz

11 mm

Not Qualified

.000065 ms

TOP

16777216 bit

2.5 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

.00006 Amp

13 mm

YES

54 ns

2.7

YES

S29GL032N90TFA010

Infineon Technologies

FLASH

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G56

3.6 V

1.2 mm

14 mm

BOTTOM/TOP

33554432 bit

2.7 V

NOR TYPE

18.4 mm

90 ns

3

S29GL256P11TAIV13

Infineon Technologies

FLASH

INDUSTRIAL

56

HTSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

110 mA

268435456 words

3

YES

1.8/3.3,3/3.3

1

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

TSSOP56,.8,20

8

Flash Memories

.5 mm

85 Cel

256MX1

256M

-40 Cel

256

YES

TIN LEAD

YES

DUAL

R-PDSO-G56

3

3.6 V

1.2 mm

14 mm

Not Qualified

268435456 bit

2.7 V

8/16

e0

260

NOR TYPE

.000005 Amp

18.4 mm

YES

110 ns

3

YES

S29GL512T13DHNV40

Infineon Technologies

FLASH

AUTOMOTIVE

64

LBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

3

16

GRID ARRAY, LOW PROFILE

8

1 mm

125 Cel

32MX16

32M

-40 Cel

BOTTOM

S-PBGA-B64

3.6 V

1.4 mm

9 mm

BOTTOM/TOP

536870912 bit

2.7 V

NOR TYPE

9 mm

130 ns

2.7

S29CL016J0MQFI113

Infineon Technologies

FLASH

INDUSTRIAL

80

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

32

FLATPACK

.8 mm

85 Cel

512KX32

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G80

3

3.6 V

3.35 mm

14 mm

Not Qualified

BOTTOM

16777216 bit

3 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK

e3

NOR TYPE

20 mm

54 ns

3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.